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Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics

Applied physics letters, 2016-12, Vol.109 (24)

2016

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GeSn-on-insulator substrate formed by direct wafer bonding

Applied physics letters, 2016-07, Vol.109 (2)

2016

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Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

Applied physics express, 2016-08, Vol.9 (8), p.86501

2016

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Integration of III-V materials and Si-CMOS through double layer transfer process

Japanese Journal of Applied Physics, 2015-03, Vol.54 (3), p.30209-1-030209-5

2015

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Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

AIP advances, 2016-02, Vol.6 (2), p.025028-025028-7

2016

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Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

Journal of applied physics, 2020-05, Vol.127 (20)

2020

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Low-threshold optically pumped lasing in highly strained germanium nanowires

Nature communications, 2017-11, Vol.8 (1), p.1845-7, Article 1845

2017

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In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

AIP advances, 2018-11, Vol.8 (11), p.115132-115132-7

2018

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Sub-mA/cm2 Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1730-1737

2021

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Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Applied physics letters, 2021-11, Vol.119 (19)

2021

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Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

AIP advances, 2016-08, Vol.6 (8), p.085106-085106-6

2016

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Strain relaxation of germanium-tin (GeSn) fins

AIP advances, 2018-02, Vol.8 (2), p.025111-025111-7

2018

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GeSn lateral p-i-n photodetector on insulating substrate

Optics express, 2018-06, Vol.26 (13), p.17312-17321

2018

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Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

Journal of applied physics, 2018-01, Vol.123 (1)

2018

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Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2023-10, Vol.296, p.116665, Article 116665

2023

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High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

Optics express, 2018-04, Vol.26 (8), p.10305-10314

2018

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CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6065-6068

2021

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A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

Journal of semiconductors, 2021-02, Vol.42 (2), p.23106-102

2021

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High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Photonics research (Washington, DC), 2017-12, Vol.5 (6), p.702

2017

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Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3754-3761

2018

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Thermal stability of germanium-tin (GeSn) fins

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications

IEEE photonics journal, 2022-06, Vol.14 (3), p.1-6

2022

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Spiral Waveguides on Germanium-on-Silicon Nitride Platform for Mid-IR Sensing Applications

IEEE photonics journal, 2018-06, Vol.10 (3), p.1-7

2018

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High-Sensitivity and Mechanically Compliant Flexible Ge Photodetectors with a Vertical p–i–n Configuration

ACS applied electronic materials, 2021-04, Vol.3 (4), p.1780-1786

2021

Volltextzugriff (PDF)

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Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics

GeSn-on-insulator substrate formed by direct wafer bonding

Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer

Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

Integration of III-V materials and Si-CMOS through double layer transfer process

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

Low-threshold optically pumped lasing in highly strained germanium nanowires

In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

Sub-mA/cm2 Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Strain relaxation of germanium-tin (GeSn) fins

GeSn lateral p-i-n photodetector on insulating substrate

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

Thermal stability of germanium-tin (GeSn) fins

Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications

Spiral Waveguides on Germanium-on-Silicon Nitride Platform for Mid-IR Sensing Applications

High-Sensitivity and Mechanically Compliant Flexible Ge Photodetectors with a Vertical p–i–n Configuration

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