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Impurity characterization in diamond for quantum and electronic applications: advances with time-resolved cathodoluminescence

Nanotechnology, 2024-08, Vol.35 (35), p.355705

2024

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Insight into boron-doped diamond Raman spectra characteristic features

Carbon (New York), 2017-05, Vol.115, p.279-284

2017

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Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector

Diamond and related materials, 2018-03, Vol.83, p.162-169

2018

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Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

Diamond and related materials, 2020-05, Vol.105, p.107768, Article 107768

2020

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Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO

Applied physics letters, 2021-03, Vol.118 (10)

2021

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Exciton-exciton annihilation in hBN

Applied physics letters, 2019-06, Vol.114 (23)

2019

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Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

Applied physics letters, 2016-08, Vol.109 (6)

2016

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Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure

2d materials, 2020-07, Vol.7 (3), p.31009

2020

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High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates

Diamond and related materials, 2014-01, Vol.41, p.34-40

2014

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Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond

Journal of applied physics, 2021-03, Vol.129 (10)

2021

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Impurity-to-band activation energy in phosphorus doped diamond

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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High quality, large surface area, homoepitaxial MPACVD diamond growth

Diamond and related materials, 2009-05, Vol.18 (5), p.683-697

2009

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Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature

2d materials, 2021-04, Vol.8 (2), p.21001

2021

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Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

Diamond and related materials, 2015-03, Vol.53, p.29-34

2015

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Arsenic-bound excitons in diamond

Physical review. B, Condensed matter and materials physics, 2014-01, Vol.89 (4), Article 045201

2014

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Reduction of dislocation densities in single crystal CVD diamond by using self-assembled metallic masks

Diamond and related materials, 2015-09, Vol.58, p.62-68

2015

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Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?

Physica status solidi. A, Applications and materials science, 2012-09, Vol.209 (9), p.1651-1658

2012

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Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

Diamond and related materials, 2016-06, Vol.66, p.61-66

2016

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Surface effects on exciton diffusion in non polar ZnO/ZnMgO heterostructures

Journal of physics. Condensed matter, 2017-12, Vol.29 (48), p.485706-485706

2017

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Quantitative analysis of electronic absorption of phosphorus donors in diamond

Diamond and related materials, 2017-04, Vol.74, p.24-30

2017

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Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy

Journal of applied physics, 2007-12, Vol.102 (11)

2007

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Exciton optical transitions in a hexagonal boron nitride single crystal

Physica status solidi. PSS-RRL. Rapid research letters, 2011-06, Vol.5 (5-6), p.214-216

2011

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Boron acceptor concentration in diamond from excitonic recombination intensities

Physical review. B, Condensed matter and materials physics, 2011-02, Vol.83 (7), Article 073201

2011

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Determination of exciton diffusion lengths in isotopically engineered diamond junctions

Applied physics letters, 2012-03, Vol.100 (12), p.122107-122107-4

2012

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Bias-enhanced nucleation of diamond on iridium: A comprehensive study of the first stages by sequential surface analysis

Surface science, 2011-03, Vol.605 (5), p.564-569

2011

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Impurity characterization in diamond for quantum and electronic applications: advances with time-resolved cathodoluminescence

Insight into boron-doped diamond Raman spectra characteristic features

Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector

Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO

Exciton-exciton annihilation in hBN

Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure

High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates

Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond

Impurity-to-band activation energy in phosphorus doped diamond

High quality, large surface area, homoepitaxial MPACVD diamond growth

Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature

Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

Arsenic-bound excitons in diamond

Reduction of dislocation densities in single crystal CVD diamond by using self-assembled metallic masks

Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices?

Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

Surface effects on exciton diffusion in non polar ZnO/ZnMgO heterostructures

Quantitative analysis of electronic absorption of phosphorus donors in diamond

Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy

Exciton optical transitions in a hexagonal boron nitride single crystal

Boron acceptor concentration in diamond from excitonic recombination intensities

Determination of exciton diffusion lengths in isotopically engineered diamond junctions

Bias-enhanced nucleation of diamond on iridium: A comprehensive study of the first stages by sequential surface analysis

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