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Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

IEEE transactions on electron devices, 2003-01, Vol.50 (1), p.225-238

2003

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All-Semiconductor Photonic Crystal Surface-Emitting Lasers Based on Epitaxial Regrowth

IEEE journal of selected topics in quantum electronics, 2013-07, Vol.19 (4), p.4900407-4900407

2013

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High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

IEEE photonics technology letters, 2005-06, Vol.17 (6), p.1139-1141

2005

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Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

IEEE photonics technology letters, 2006-01, Vol.18 (1), p.58-60

2006

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Design and performance of an InGaAs-InP single-photon avalanche diode detector

IEEE journal of quantum electronics, 2006-04, Vol.42 (4), p.397-403

2006

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Epitaxially Regrown GaAs-Based Photonic Crystal Surface-Emitting Laser

IEEE photonics technology letters, 2012-06, Vol.24 (11), p.966-968

2012

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Systematic Study of the Effects of Modulation p-Doping on 1.3-μm Quantum-Dot Lasers

IEEE journal of quantum electronics, 2007-11, Vol.43 (11-12), p.1129-1139

2007

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1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Electronics letters, 2004-10, Vol.40 (22), p.1412-1413

2004

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Systematic Study of the Effects of Modulation p-Doping on 1.3- \mu} Quantum-Dot Lasers

IEEE journal of quantum electronics, 2007-12, Vol.43 (12), p.1129-1139

2007

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Tuning Superluminescent Diode Characteristics for Optical Coherence Tomography Systems by Utilizing a Multicontact Device Incorporating Wavelength-Modulated Quantum Dots

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.757-763

2009

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Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

IEEE journal of selected topics in quantum electronics, 2017-11, Vol.23 (6), p.1-11

2017

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Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.819-827

2009

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High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1267-1272

2007

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GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

Electronics letters, 2008, Vol.44 (15), p.905-907

2008

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Quantum Dot Superluminescent Diodes for Optical Coherence Tomography: Device Engineering

IEEE journal of selected topics in quantum electronics, 2010-07, Vol.16 (4), p.1015-1022

2010

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Quantum Dot Superluminescent Diodes for Optical Coherence Tomography: Skin Imaging

IEEE journal of selected topics in quantum electronics, 2010-07, Vol.16 (4), p.748-754

2010

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Distributed feedback laser employing buried GaAs/InGaP index-coupled grating

Electronics letters, 2010-07, Vol.46 (15), p.1076-1077

2010

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High-Power 1.3-$\mu$m Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy

IEEE photonics technology letters, 2007-01, Vol.19 (2), p.109-111

2007

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Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching

Electronics letters, 2007-05, Vol.43 (10), p.587-589

2007

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Improved temperature performance of 1.31-μm quantum dot lasers by optimized ridge waveguide design

IEEE photonics technology letters, 2005-09, Vol.17 (9), p.1785-1787

2005

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A simplistic view of hadron calorimetry

AIP conference proceedings, 2007, Vol.896 (1)

Groom, Donald E.

2007

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Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1041-1047

2005

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Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3- mu m quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5)

2005

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GaAs Based Superluminescent Diodes Employing Window Facets in a Self-Aligned Stripe

2014 International Semiconductor Laser Conference, 2014, p.175-176

2014

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Multi-section quantum dot superluminescent diodes for spectral shape engineering

IET optoelectronics, 2009-04, Vol.3 (2), p.100-100

2009

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Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

All-Semiconductor Photonic Crystal Surface-Emitting Lasers Based on Epitaxial Regrowth

High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

Design and performance of an InGaAs-InP single-photon avalanche diode detector

Epitaxially Regrown GaAs-Based Photonic Crystal Surface-Emitting Laser

Systematic Study of the Effects of Modulation p-Doping on 1.3-μm Quantum-Dot Lasers

1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Systematic Study of the Effects of Modulation p-Doping on 1.3- \mu} Quantum-Dot Lasers

Tuning Superluminescent Diode Characteristics for Optical Coherence Tomography Systems by Utilizing a Multicontact Device Incorporating Wavelength-Modulated Quantum Dots

Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer

High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography

GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

Quantum Dot Superluminescent Diodes for Optical Coherence Tomography: Device Engineering

Quantum Dot Superluminescent Diodes for Optical Coherence Tomography: Skin Imaging

Distributed feedback laser employing buried GaAs/InGaP index-coupled grating

High-Power 1.3-$\mu$m Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy

Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching

Improved temperature performance of 1.31-μm quantum dot lasers by optimized ridge waveguide design

A simplistic view of hadron calorimetry

Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers

Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3- mu m quantum-dot lasers

GaAs Based Superluminescent Diodes Employing Window Facets in a Self-Aligned Stripe

Multi-section quantum dot superluminescent diodes for spectral shape engineering

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