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Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

EPJ Photovoltaics, 2018, Vol.9, p.3

2018

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HiPIMS Ion Energy Distribution Measurements in Reactive Mode

IEEE transactions on plasma science, 2010-11, Vol.38 (11), p.3089-3094

2010

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GHz frequency ZnO/Si SAW device

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2008-02, Vol.55 (2), p.442-450

2008

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Titanium nitride films for micro-supercapacitors: Effect of surface chemistry and film morphology on the capacitance

Journal of power sources, 2015-12, Vol.300, p.525-532

2015

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Influence of surface chemistry and point defects in TiN based electrodes on electrochemical capacitive storage activity

Scripta materialia, 2018-08, Vol.153, p.59-62

2018

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Electrodes based on nano-tree-like vanadium nitride and carbon nanotubes for micro-supercapacitors

Journal of materials science & technology, 2018-06, Vol.34 (6), p.976-982

2018

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The influence of CH4 addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH4/N2/Ar/hexamethyldisilazane microwave plasma

Thin solid films, 2011-10, Vol.520 (1), p.245-250

2011

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Nanostructuration and band gap emission enhancement of ZnO film via electrochemical anodization

Thin solid films, 2014-11, Vol.571 (Part 1), p.168-174

2014

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Effect of temperature on the synthesis of nanoporous carbon from copper/carbon thin films to nanoporous carbon for sensing applications

Thin solid films, 2017-05, Vol.630, p.59-65

2017

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AlN/ZnO/diamond structure combining isolated and surface acoustic waves

Applied physics letters, 2009-12, Vol.95 (23), p.233503-233503-3

2009

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(Invited) Dual-Gate TFT for Chemical Detection

ECS transactions, 2018-07, Vol.86 (11), p.169-176

2018

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Wide variations of SiCxNy:H thin films optical constants deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma

Surface & coatings technology, 2012-09, Vol.208, p.46-50

2012

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Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H 2 /N 2 /Ar/Hexamethyldisilazane Gas Mixture

Plasma processes and polymers, 2014-06, Vol.11 (6), p.551-558

2014

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Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H2/N2/Ar/Hexamethyldisilazane Gas Mixture

Plasma processes and polymers, 2014-06, Vol.11 (6), p.551-558

2014

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The influence of CH 4 addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH 4/N 2/Ar/hexamethyldisilazane microwave plasma

Thin solid films, 2011, Vol.520 (1), p.245-250

2011

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The influence of CH(4) addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH(4)/N(2)/Ar/hexamethyldisilazane microwave plasma

Thin solid films, 2011, Vol.520 (1), p.245-250

2011

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GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.498-501

2014

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Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H sub(2)/N sub(2)/Ar/Hexamethyldi silazane Gas Mixture

Plasma processes and polymers, 2014-06, Vol.11 (6), p.551-558

2014

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Characterization of a N2/CH4 Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition

Plasma processes and polymers, 2009-06, Vol.6 (S1), p.S576-S581

2009

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Magnetic tunnel junctions with a zinc oxide-cobalt oxide composite tunnel barrier

Applied physics letters, 2005-03, Vol.86 (11), p.112505-112505-3

2005

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Characterization of a N sub(2)/CH sub(4) Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition

Plasma processes and polymers, 2009-06, Vol.6 (S1), p.S576-S581

2009

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Characterization of a N 2 /CH 4 Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition

Plasma processes and polymers, 2009-06, Vol.6 (S1)

2009

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Halide Perovskite High‑k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity

ACS materials letters, 2019-12, Vol.1 (6), p.633-640

2019

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AlN/ZnO/Diamond Waveguiding Layer Acoustic Wave Structure: Theoretical and Experimental Results

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2010, Vol.57 (8), p.1818-1824

2010

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(Invited) Dual-Gate TFT for Chemical Detection

Meeting abstracts (Electrochemical Society), 2018-07, Vol.MA2018-02 (36), p.1225-1225

2018

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Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

HiPIMS Ion Energy Distribution Measurements in Reactive Mode

GHz frequency ZnO/Si SAW device

Titanium nitride films for micro-supercapacitors: Effect of surface chemistry and film morphology on the capacitance

Influence of surface chemistry and point defects in TiN based electrodes on electrochemical capacitive storage activity

Electrodes based on nano-tree-like vanadium nitride and carbon nanotubes for micro-supercapacitors

The influence of CH4 addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH4/N2/Ar/hexamethyldisilazane microwave plasma

Nanostructuration and band gap emission enhancement of ZnO film via electrochemical anodization

Effect of temperature on the synthesis of nanoporous carbon from copper/carbon thin films to nanoporous carbon for sensing applications

AlN/ZnO/diamond structure combining isolated and surface acoustic waves

(Invited) Dual-Gate TFT for Chemical Detection

Wide variations of SiCxNy:H thin films optical constants deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma

Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H 2 /N 2 /Ar/Hexamethyldisilazane Gas Mixture

Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H2/N2/Ar/Hexamethyldisilazane Gas Mixture

The influence of CH 4 addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH 4/N 2/Ar/hexamethyldisilazane microwave plasma

The influence of CH(4) addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH(4)/N(2)/Ar/hexamethyldisilazane microwave plasma

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H sub(2)/N sub(2)/Ar/Hexamethyldi silazane Gas Mixture

Characterization of a N2/CH4 Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition

Magnetic tunnel junctions with a zinc oxide-cobalt oxide composite tunnel barrier

Characterization of a N sub(2)/CH sub(4) Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition

Characterization of a N 2 /CH 4 Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition

Halide Perovskite High‑k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity

AlN/ZnO/Diamond Waveguiding Layer Acoustic Wave Structure: Theoretical and Experimental Results

(Invited) Dual-Gate TFT for Chemical Detection

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