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Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice

ECS transactions, 2020-09, Vol.98 (5), p.185-194

2020

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Group IV Heteroepitaxy for Advanced Electronic Devices Integrated in BiCMOS Technology

ECS transactions, 2019-10, Vol.93 (1), p.1-5

2019

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(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design

ECS transactions, 2016-08, Vol.75 (8), p.439-446

2016

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Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs

ECS transactions, 2014, Vol.64 (6), p.977-987

2014

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In-Situ Boron Doped SiGe Epitaxy Optimization for FinFET Source/Drain

ECS transactions, 2016, Vol.75 (8), p.265-272

2016

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(Invited) Low Resistance Contacts to Nanoscale Semiconductor Devices

ECS transactions, 2016, Vol.75 (8), p.513-523

2016

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Impurity and Defect Monitoring in Hexagonal Si and SiGe Nanocrystals

ECS transactions, 2016, Vol.75 (8), p.751-760

2016

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(Invited) Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

ECS transactions, 2016, Vol.75 (8), p.703-709

2016

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Modeling and Simulation of Negative Capacitance Gate on Ge FETs

ECS transactions, 2016, Vol.75 (8), p.461-467

2016

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(Invited) The Effect of Germanium/Silicon Interface on Germanium Photonics

ECS transactions, 2016, Vol.75 (8), p.683-688

2016

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Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors

ECS transactions, 2016-08, Vol.75 (8), p.51-58

2016

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Low Threshold Light Emission from Reverse-Rib n + Ge Cavity Made by P Diffusion

ECS transactions, 2016-08, Vol.75 (8), p.193-198

2016

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Strain Relaxed Silicon Germanium Buffer Layers: From Growth to Integration Challenges

ECS transactions, 2016, Vol.75 (8), p.599-604

2016

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Comparative Analysis of Growth Rate Enhancement and Ge Redistribution during Silicon-Germanium Oxidation by Rapid Thermal Oxidation

ECS transactions, 2016-08, Vol.75 (8), p.67-78

2016

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Ω-Gate Nanowire P-FET with cSiGe Channel Epitaxied on Strained-SOI Substrates

ECS transactions, 2016, Vol.75 (8), p.59-65

2016

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(Invited) Processing Technologies for Advanced Ge Devices

ECS transactions, 2016, Vol.75 (8), p.491-503

2016

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A Multimode SiGe BiCMOS 5–6 GHz Front-End IC that Enables 802.11ac Wave 2 and 802.11ax Wireless LAN Front-End Designs

ECS transactions, 2016, Vol.75 (8), p.151-159

2016

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Low Power FDSOI Technology and Devices for RF Applications

ECS transactions, 2016, Vol.75 (8), p.21-27

2016

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Integration of Selective Epitaxial Growth of SiGe/Ge Layers in 14nm Node FinFETs

ECS transactions, 2016, Vol.75 (8), p.273-279

2016

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Confinement and dynamics of laser-produced plasma expanding across a transverse magnetic field

Physical review. E, Statistical, nonlinear, and soft matter physics, 2004-02, Vol.69 (2 Pt 2), p.026413-026413, Article 026413

2004

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(Invited) UTBB FDSOI PMOSFETs Including Strained SiGe Channels at the 14nm Technology Node and Beyond

ECS transactions, 2016, Vol.75 (8), p.3-14

2016

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(Invited) Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach

ECS transactions, 2014, Vol.64 (6), p.177-194

2014

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(Invited) MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional Diversification

ECS transactions, 2013, Vol.58 (9), p.115-123

2013

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Parametric Optical Signal Processing in Silicon Waveguides with Reverse-Biased p-i-n Junctions

2014 IEEE Photonics Society Summer Topical Meeting Series, 2014, p.116-117

2014

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(Invited) Selective-Area Metal Organic Vapor-Phase Epitaxy of III-V on Si: What About Defect Density?

ECS transactions, 2014, Vol.64 (6), p.513-521

2014

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Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice

Group IV Heteroepitaxy for Advanced Electronic Devices Integrated in BiCMOS Technology

(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design

Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs

In-Situ Boron Doped SiGe Epitaxy Optimization for FinFET Source/Drain

(Invited) Low Resistance Contacts to Nanoscale Semiconductor Devices

Impurity and Defect Monitoring in Hexagonal Si and SiGe Nanocrystals

(Invited) Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

Modeling and Simulation of Negative Capacitance Gate on Ge FETs

(Invited) The Effect of Germanium/Silicon Interface on Germanium Photonics

Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors

Low Threshold Light Emission from Reverse-Rib n + Ge Cavity Made by P Diffusion

Strain Relaxed Silicon Germanium Buffer Layers: From Growth to Integration Challenges

Comparative Analysis of Growth Rate Enhancement and Ge Redistribution during Silicon-Germanium Oxidation by Rapid Thermal Oxidation

Ω-Gate Nanowire P-FET with cSiGe Channel Epitaxied on Strained-SOI Substrates

(Invited) Processing Technologies for Advanced Ge Devices

A Multimode SiGe BiCMOS 5–6 GHz Front-End IC that Enables 802.11ac Wave 2 and 802.11ax Wireless LAN Front-End Designs

Low Power FDSOI Technology and Devices for RF Applications

Integration of Selective Epitaxial Growth of SiGe/Ge Layers in 14nm Node FinFETs

Confinement and dynamics of laser-produced plasma expanding across a transverse magnetic field

(Invited) UTBB FDSOI PMOSFETs Including Strained SiGe Channels at the 14nm Technology Node and Beyond

(Invited) Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach

(Invited) MEMS and Photonics Module Integration into SiGe BiCMOS Technology for More than Moore Functional Diversification

Parametric Optical Signal Processing in Silicon Waveguides with Reverse-Biased p-i-n Junctions

(Invited) Selective-Area Metal Organic Vapor-Phase Epitaxy of III-V on Si: What About Defect Density?

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