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A process integration of high-performance 64-kb MRAM

IEEE transactions on magnetics, 2003-09, Vol.39 (5), p.2851-2853

2003

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A new reference signal generation method for MRAM using a 90-degree rotated MTJ

IEEE transactions on magnetics, 2004-07, Vol.40 (4), p.2628-2630

2004

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IEEE_Xplore

MLC PRAM with SLC write-speed and robust read scheme

2010 Symposium on VLSI Technology, 2010, p.201-202

2010

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IEEE_Xplore

Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.18.2.1-18.2.4

2018

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IEEE_Xplore

Dynamic loading impact-induced demagnetization in thin film media

IEEE transactions on magnetics, 1993-11, Vol.29 (6), p.3903-3905

1993

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IEEE_Xplore

Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.27.2.1-27.2.4

2016

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IEEE_Xplore

Highly reliable 50nm contact cell technology for 256Mb PRAM

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.98-99

2005

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IEEE_Xplore

Slider-disk interactions during the load-unload process

IEEE transactions on magnetics, 1990-09, Vol.26 (5), p.2490-2492

1990

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IEEE_Xplore

Unloaded slider vibrations excited by air flow between slider and rotating disk

IEEE transactions on magnetics, 1992-09, Vol.28 (5), p.2539-2541

1992

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IEEE_Xplore

Realization of vertical resistive memory (VRRAM) using cost effective 3D process

2011 International Electron Devices Meeting, 2011, p.31.8.1-31.8.4

2011

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IEEE_Xplore

PRAM cell technology and characterization in 20nm node size

2011 International Electron Devices Meeting, 2011, p.3.1.1-3.1.4

2011

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IEEE_Xplore

Measurements of slider-disk contacts during dynamic load-unload

IEEE transactions on magnetics, 1991-11, Vol.27 (6), p.5073-5075

1991

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IEEE_Xplore

Reliability of STT-MRAM for various embedded applications

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-5

2021

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IEEE_Xplore

Natural frequencies of sliders and transducers used to detect slider-disk contacts

IEEE transactions on magnetics, 1989-09, Vol.25 (5), p.3725-3727

1989

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IEEE_Xplore

Full integration and cell characteristics for 64Mb nonvolatile PRAM

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.20-21

2004

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IEEE_Xplore

Highly scalable MRAM using field assisted current induced switching

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.184-185

2005

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IEEE_Xplore

12.5 Mb/mm2 embedded MRAM for high density non-volatile RAM applications

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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Verfügbarkeit prüfen

Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-3

2019

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IEEE_Xplore

Advanced ring type contact technology for high density phase change memory

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.513-516

2005

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IEEE_Xplore

Process technologies for the integration of high density phase change RAM

2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005, 2005, p.19-22

2005

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IEEE_Xplore

Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

2008 Symposium on VLSI Technology, 2008, p.98-99

2008

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IEEE_Xplore

A novel write method for improving RESET distribution of PRAM

2017 Symposium on VLSI Technology, 2017, p.T96-T97

2017

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Verfügbarkeit prüfen

Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology

2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672), 2003, p.29-31

2003

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IEEE_Xplore

An optimum design of the sub-ambient pressure shaped rail sliders on flying characteristics considering the high altitude condition

IEEE transactions on magnetics, 1999-09, Vol.35 (5), p.2424-2426

1999

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IEEE_Xplore

1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.2.2.1-2.2.4

2019

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IEEE_Xplore

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A process integration of high-performance 64-kb MRAM

A new reference signal generation method for MRAM using a 90-degree rotated MTJ

MLC PRAM with SLC write-speed and robust read scheme

Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic

Dynamic loading impact-induced demagnetization in thin film media

Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic

Highly reliable 50nm contact cell technology for 256Mb PRAM

Slider-disk interactions during the load-unload process

Unloaded slider vibrations excited by air flow between slider and rotating disk

Realization of vertical resistive memory (VRRAM) using cost effective 3D process

PRAM cell technology and characterization in 20nm node size

Measurements of slider-disk contacts during dynamic load-unload

Reliability of STT-MRAM for various embedded applications

Natural frequencies of sliders and transducers used to detect slider-disk contacts

Full integration and cell characteristics for 64Mb nonvolatile PRAM

Highly scalable MRAM using field assisted current induced switching

12.5 Mb/mm2 embedded MRAM for high density non-volatile RAM applications

Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology

Advanced ring type contact technology for high density phase change memory

Process technologies for the integration of high density phase change RAM

Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

A novel write method for improving RESET distribution of PRAM

Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology

An optimum design of the sub-ambient pressure shaped rail sliders on flying characteristics considering the high altitude condition

1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology

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