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Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers

ECS transactions, 2015-09, Vol.69 (11), p.39-46

2015

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(Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method

ECS transactions, 2016, Vol.75 (12), p.163-168

2016

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(Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography

ECS transactions, 2016, Vol.75 (12), p.215-231

2016

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Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method

ECS transactions, 2015-09, Vol.69 (11), p.33-38

2015

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Investigation of Penetration Depth and Defect Image Contrast Formation in Grazing Incidence X-ray Topography of 4H-SiC Wafers

ECS transactions, 2016, Vol.75 (12), p.239-246

2016

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Characterization of Structural Defects in Wide Band-Gap Compound Materials for Semiconductor and Opto-Electronic Applications

Goue, Ouloide Yannick

2016

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Structural Characterization of Lateral-grown 6H-SiC a/m-plane Seed Crystals by Hot Wall CVD Epitaxy

MRS proceedings, 2014, Vol.1693 (1), p.43-48, Article mrss14-1693-dd01-03

2014

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(Invited) Structural Characterization of SiC Crystals Grown By Solvent Laser Heated Floating Zone Method and Hot Wall Chemical Vapor Deposition for the Development of a Low Defect Density Bulk Growth Technique for SiC

Meeting abstracts (Electrochemical Society), 2015-07, Vol.MA2015-02 (30), p.1114-1114

2015

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(Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography

Meeting abstracts (Electrochemical Society), 2016-09, Vol.MA2016-02 (35), p.2276-2276

2016

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(Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method

Meeting abstracts (Electrochemical Society), 2016-09, Vol.MA2016-02 (35), p.2269-2269

2016

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Investigation of Penetration Depth and Defect Image Contrast Formation in Grazing Incidence X-ray Topography of 4H-SiC Wafers

Meeting abstracts (Electrochemical Society), 2016-09, Vol.MA2016-02 (35), p.2279-2279

2016

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Study on the Relaxation Process in 4H-SiC Homoepitaxy Growth

Meeting abstracts (Electrochemical Society), 2015-07, Vol.MA2015-02 (30), p.1126-1126

2015

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Assessment of Factors Controlling the X-ray Penetration Depth in Studies of 4H-SiC using Monochromatic and White Beam Synchrotron X-ray Topography in Reflection Geometry

Meeting abstracts (Electrochemical Society), 2015-07, Vol.MA2015-02 (30), p.1116-1116

2015

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Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method

Meeting abstracts (Electrochemical Society), 2015-07, Vol.MA2015-02 (30), p.1115-1115

2015

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Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers

Meeting abstracts (Electrochemical Society), 2015-07, Vol.MA2015-02 (30), p.1125-1125

2015

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Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers

(Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method

(Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography

Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method

Investigation of Penetration Depth and Defect Image Contrast Formation in Grazing Incidence X-ray Topography of 4H-SiC Wafers

Characterization of Structural Defects in Wide Band-Gap Compound Materials for Semiconductor and Opto-Electronic Applications

Structural Characterization of Lateral-grown 6H-SiC a/m-plane Seed Crystals by Hot Wall CVD Epitaxy

(Invited) Structural Characterization of SiC Crystals Grown By Solvent Laser Heated Floating Zone Method and Hot Wall Chemical Vapor Deposition for the Development of a Low Defect Density Bulk Growth Technique for SiC

(Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography

(Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method

Investigation of Penetration Depth and Defect Image Contrast Formation in Grazing Incidence X-ray Topography of 4H-SiC Wafers

Study on the Relaxation Process in 4H-SiC Homoepitaxy Growth

Assessment of Factors Controlling the X-ray Penetration Depth in Studies of 4H-SiC using Monochromatic and White Beam Synchrotron X-ray Topography in Reflection Geometry

Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method

Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers

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