UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations

Scientific reports, 2022-02, Vol.12 (1), p.3235-11, Article 3235

2022

Volltextzugriff (PDF)

Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals

Science (American Association for the Advancement of Science), 2012-03, Vol.335 (6074), p.1330-1334

2012

Volltextzugriff (PDF)

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Materials, 2021-09, Vol.14 (18), p.5348

2021

Volltextzugriff (PDF)

The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (25), p.838-8392

2020

Volltextzugriff (PDF)

Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations

Materials, 2019-09, Vol.12 (18), p.3027

2019

Volltextzugriff (PDF)

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X‑ray Diffraction Microscopy

ACS applied materials & interfaces, 2015-05, Vol.7 (17), p.9031-9037

2015

Volltextzugriff (PDF)

Perfect crystals grown from imperfect interfaces

Scientific reports, 2013-07, Vol.3 (1), p.2276-2276, Article 2276

2013

Volltextzugriff (PDF)

Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case

physica status solidi (b), 2022-09, Vol.259 (9), p.n/a

2022

Volltextzugriff (PDF)

Impact of Inversion Domain Boundaries on the Electronic Properties of 3C‐SiC

physica status solidi (b), 2022-09, Vol.259 (9), p.n/a

2022

Volltextzugriff (PDF)

Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case

physica status solidi (b), 2022-09, Vol.259 (9), p.n/a

2022

Volltextzugriff (PDF)

Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration

APL materials, 2013-11, Vol.1 (5), p.052109-052109-8

2013

Volltextzugriff (PDF)

Author Correction: In-plane selective area InSb–Al nanowire quantum networks

Communications physics, 2021-03, Vol.4 (1), p.1-1, Article 63

2021

Volltextzugriff (PDF)

Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

Acta materialia, 2021-07, Vol.213, p.116915, Article 116915

2021

Volltextzugriff (PDF)

Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure

Nanoscale horizons, 2024-09

2024

Volltextzugriff (PDF)

Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

physica status solidi (b), 2021-06, Vol.258 (6), p.n/a

2021

Volltextzugriff (PDF)

Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition

Acta materialia, 2024-01, Vol.263, p.119465, Article 119465

2024

Volltextzugriff (PDF)

Temperature-Dependent Stability of Polytypes and Stacking Faults in Si C : Reconciling Theory and Experiments

Physical review applied, 2019-08, Vol.12 (2), Article 021002

2019

Volltextzugriff (PDF)

Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials

Modelling and simulation in materials science and engineering, 2020-01, Vol.28 (1), p.15002

2020

Volltextzugriff (PDF)

Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

Journal of applied physics, 2018-05, Vol.123 (18)

2018

Volltextzugriff (PDF)

Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations

CrystEngComm, 2021-02, Vol.23 (7), p.1566-1571

2021

Volltextzugriff (PDF)

Unveiling Planar Defects in Hexagonal Group IV Materials

Nano letters, 2021-04, Vol.21 (8), p.3619-3625

2021

Volltextzugriff (PDF)

The Lattice Strain Distribution in Ge x Sn 1-x Micro-Disks Investigated at the Sub 100-nm Scale

ECS transactions, 2024-09, Vol.114 (2), p.145-153

2024

Volltextzugriff (PDF)

Lattice tilt and strain mapped by X‐ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals

Journal of applied crystallography, 2018-04, Vol.51 (2), p.368-385

2018

Volltextzugriff (PDF)

Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

Advanced materials (Weinheim), 2013-08, Vol.25 (32), p.4408-4412

2013

Volltextzugriff (PDF)

Stress engineering of boron doped diamond thin films via micro-fabrication

APL materials, 2021-06, Vol.9 (6)

2021

Volltextzugriff (PDF)

1 – 25 von 65

Suche als RSS-Feed

Aktive Filter

Nur zeigenMit Volltextzugriff

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(46)

Publikationsform

Sprache

Englisch
(63)
Italienisch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(37)
Physical Sciences
(25)
Materials Science
(24)
Physics
(24)
Technology
(24)
Materials Science, Multidisciplinary
(22)
Physics, Applied
(16)
Physics, Condensed Matter
(14)
Science & Technology - Other Topics
(13)
Chemistry
(11)
Nanoscience & Nanotechnology
(10)
Dislocations
(9)
Chemistry, Physical
(8)
Stacking Faults
(8)
Molecular Dynamics
(7)
Chemistry, Multidisciplinary
(6)
Defects
(6)
Silicon
(6)
Silicon Substrates
(6)
Crystals
(5)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations

Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X‑ray Diffraction Microscopy

Perfect crystals grown from imperfect interfaces

Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case

Impact of Inversion Domain Boundaries on the Electronic Properties of 3C‐SiC

Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case

Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration

Author Correction: In-plane selective area InSb–Al nanowire quantum networks

Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure

Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition

Temperature-Dependent Stability of Polytypes and Stacking Faults in Si C : Reconciling Theory and Experiments

Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials

Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations

Unveiling Planar Defects in Hexagonal Group IV Materials

The Lattice Strain Distribution in Ge x Sn 1-x Micro-Disks Investigated at the Sub 100-nm Scale

Lattice tilt and strain mapped by X‐ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals

Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

Stress engineering of boron doped diamond thin films via micro-fabrication

Aktive Filter

Suchergebnisse filtern