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Effects of nanosecond-scale prepulse on generation of high-energy protons in target normal sheath acceleration

Applied physics letters, 2013-06, Vol.102 (22)

2013

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Schottky behavior at InN-GaN interface

Applied physics letters, 2005-11, Vol.87 (21), p.212111-212111-3

2005

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Ferroelectric switching mechanism in SrBi2Ta2O9

Applied physics letters, 2001-08, Vol.79 (7), p.1015-1017

2001

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Determination of junction temperature in AlGaInP∕GaAs light emitting diodes by self-excited photoluminescence signal

Applied physics letters, 2006-09, Vol.89 (10)

2006

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Transmission electron microscopy study on ferroelectric domain structure in SrBi2Ta2O9 ceramics

Applied physics letters, 2000-01, Vol.76 (1), p.103-105

2000

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Fatigue characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

Applied physics letters, 1998-08, Vol.73 (6), p.788-790

1998

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Heat flow in AlGaInP∕GaAs light-emitting diodes

Applied physics letters, 2007-04, Vol.90 (18)

2007

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Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes

Applied physics letters, 2001-06, Vol.78 (26), p.4175-4177

2001

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Retention characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

Applied physics letters, 1998-12, Vol.73 (25), p.3674-3676

1998

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Pulsed excimer (KrF) laser induced crystallization of PbZr0.44Ti0.56O3 amorphous films

Applied physics letters, 1995-05, Vol.66 (19), p.2481-2483

1995

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X-ray diffraction and Raman scattering study of SrBi2Ta2O9 ceramics and thin films with Bi3TiNbO9 addition

Applied physics letters, 2001-12, Vol.79 (23), p.3827-3829

2001

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Internal friction study on low-temperature phase transitions in lead zirconate titanate ferroelectric ceramics

Applied physics letters, 2003-01, Vol.82 (1), p.109-111

2003

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Mechanical properties related to the relaxor-ferroelectric phase transition of titanium-doped lead magnesium niobate

Applied physics letters, 2002-09, Vol.81 (11), p.2059-2061

2002

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Switching properties of SrBi2Ta2O9 thin films produced by metalorganic decomposition

Applied physics letters, 2000-01, Vol.76 (3), p.369-371

2000

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Correlation among oxygen vacancies in bismuth titanate ferroelectric ceramics

Applied physics letters, 2004-11, Vol.85 (20), p.4717-4719

2004

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Heat flow in Al Ga In P ∕ Ga As light-emitting diodes

Applied physics letters, 2007-04, Vol.90 (18), p.181104-181104-3

2007

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Structures and defects induced during annealing of sputtered near-equiatomic NiTi shape memory thin films

Applied physics letters, 1996-10, Vol.69 (18), p.2656-2658

1996

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Laser-induced phase transformation from amorphous to perovskite in PbZr0.44Ti0.56O3 films with the substrate at room temperature

Applied physics letters, 1994-10, Vol.65 (16), p.2015-2017

1994

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Determination of junction temperature in Al Ga In P ∕ Ga As light emitting diodes by self-excited photoluminescence signal

Applied physics letters, 2006-09, Vol.89 (10), p.101114-101114-3

2006

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Crossover of magnetoresistance from negative to positivein the heterojunction composed of La 0.82 Ca 0.18 Mn O 3 and 0.5 wt % Nb-doped Sr Ti O 3

Applied physics letters, 2006-06, Vol.88 (23), p.232508-232508-3

2006

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Crossover of magnetoresistance from negative to positive in the heterojunction composed of La0.82Ca0.18MnO3 and 0.5wt% Nb-doped SrTiO3

Applied physics letters, 2006-06, Vol.88 (23)

2006

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The phase transition and transport properties of Sr0.56C60O1.5

Applied physics letters, 1995-12, Vol.67 (23), p.3417-3419

1995

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Ferroelectric switching mechanism in SrBi{sub 2}Ta{sub 2}O{sub 9}

Applied physics letters, 2001-08, Vol.79 (7)

2001

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Phase transition in relaxor ferroelectrics studied by mechanical measurements

Applied physics letters, 2003-11, Vol.83 (21), p.4384-4386

2003

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Priority of domain wall pinning during the fatigue period in bismuth titanate ferroelectric thin films

Applied physics letters, 2005-05, Vol.86 (19), p.192908-192908-3

2005

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Effects of nanosecond-scale prepulse on generation of high-energy protons in target normal sheath acceleration

Schottky behavior at InN-GaN interface

Ferroelectric switching mechanism in SrBi2Ta2O9

Determination of junction temperature in AlGaInP∕GaAs light emitting diodes by self-excited photoluminescence signal

Transmission electron microscopy study on ferroelectric domain structure in SrBi2Ta2O9 ceramics

Fatigue characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

Heat flow in AlGaInP∕GaAs light-emitting diodes

Why lanthanum-substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes

Retention characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

Pulsed excimer (KrF) laser induced crystallization of PbZr0.44Ti0.56O3 amorphous films

X-ray diffraction and Raman scattering study of SrBi2Ta2O9 ceramics and thin films with Bi3TiNbO9 addition

Internal friction study on low-temperature phase transitions in lead zirconate titanate ferroelectric ceramics

Mechanical properties related to the relaxor-ferroelectric phase transition of titanium-doped lead magnesium niobate

Switching properties of SrBi2Ta2O9 thin films produced by metalorganic decomposition

Correlation among oxygen vacancies in bismuth titanate ferroelectric ceramics

Heat flow in Al Ga In P ∕ Ga As light-emitting diodes

Structures and defects induced during annealing of sputtered near-equiatomic NiTi shape memory thin films

Laser-induced phase transformation from amorphous to perovskite in PbZr0.44Ti0.56O3 films with the substrate at room temperature

Determination of junction temperature in Al Ga In P ∕ Ga As light emitting diodes by self-excited photoluminescence signal

Crossover of magnetoresistance from negative to positivein the heterojunction composed of La 0.82 Ca 0.18 Mn O 3 and 0.5 wt % Nb-doped Sr Ti O 3

Crossover of magnetoresistance from negative to positive in the heterojunction composed of La0.82Ca0.18MnO3 and 0.5wt% Nb-doped SrTiO3

The phase transition and transport properties of Sr0.56C60O1.5

Ferroelectric switching mechanism in SrBi{sub 2}Ta{sub 2}O{sub 9}

Phase transition in relaxor ferroelectrics studied by mechanical measurements

Priority of domain wall pinning during the fatigue period in bismuth titanate ferroelectric thin films

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