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A Review on the Deep Learning-based Surface Reconstruction from the Point Clouds

Recent Patents on Engineering, 2024-07, Vol.18 (5)

2024

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Temperature-Switching During Irradiation as a Test for ELDRS in Linear Bipolar Devices

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.199-206

2019

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Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs

IEEE transactions on nuclear science, 2017-07, Vol.64 (7), p.1897-1904

2017

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High tolerance of proton irradiation of Ge2Sb2Te5 phase change material

Journal of alloys and compounds, 2013-10, Vol.575, p.229-232

2013

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Proton radiation effect of NPN-input operational amplifier under different bias conditions

Journal of semiconductors, 2015-12, Vol.36 (12), p.114-118

姜柯陆妩郭旗何承发王信刘默寒李小龙

2015

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Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs

2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018, p.1-3

2018

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Fabrication and OSL properties of Eu3+-doped NaCaPO4 glass-ceramics

Materials letters, 2020-02, Vol.261, p.126973, Article 126973

2020

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Influence of channel length and layout on TID for 0.18 μm NMOS transistors

核技术（英文版）, 2013-12, Vol.24 (6), p.17-22

WU Xue LU Wu WANG Xin GUO Qi HE ,Chengfa LI Yudong XI Shanbir SUN Jing WEN Lin

2013

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Novel Sm3+ doped BaZn2(PO4)2 glass-ceramic for optically stimulated luminescence dosimetry

Journal of non-crystalline solids, 2022-10, Vol.594, p.121796, Article 121796

2022

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Optically stimulated luminescence of Dy3+-doped NaCaPO4 glass-ceramics

Journal of rare earths, 2020-09, Vol.38 (9), p.927-932

2020

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Fabrication and optical properties of Tb3+‐doped NaCaPO4 glass‐ceramics and their radiation detection applications

Journal of the American Ceramic Society, 2020-05, Vol.103 (5), p.3138-3146

2020

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Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology

IEEE transactions on nuclear science, 2021-10, Vol.68 (10), p.2516-2523

2021

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Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers

IEEE transactions on nuclear science, 2021-07, Vol.68 (7), p.1423-1429

2021

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Fabrication and optical properties of Tb 3+ ‐doped NaCaPO 4 glass‐ceramics and their radiation detection applications

Journal of the American Ceramic Society, 2020-05, Vol.103 (5), p.3138-3146

2020

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Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers

Japanese Journal of Applied Physics, 2022-01, Vol.61 (1), p.12001

2022

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Synthesis and optical properties of novel Gd3+-doped BaZn2(PO4)2 glass-ceramics for radiation detection applications

Journal of rare earths, 2022-12, Vol.40 (12), p.1927-1934

2022

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Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Electronics (Basel), 2024-01, Vol.13 (1), p.224

2024

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Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices

Electronics (Basel), 2023-10, Vol.12 (19), p.4181

2023

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Effects of recording time and residue on dose-response by LiMgPO4: Tb, B ceramic disc synthesized via improved sintering process

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2018-05, Vol.422, p.12-17

2018

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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

IEEE transactions on nuclear science, 2019-04, Vol.66 (4), p.702-709

2019

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The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1920-1927

2018

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Double humps and radiation effects of SOI NMOSFET

Journal of semiconductors, 2011-06, Vol.32 (6), p.44-46

崔江维余学峰任迪远何承发高博李明卢健

2011

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Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ionizing Radiation Effects on SET in Linear Bipolar Circuits

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1557-1565

2019

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Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose

IEEE transactions on nuclear science, 2018-02, Vol.65 (2), p.691-697

2018

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Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors

Electronics (Basel), 2023-02, Vol.12 (4), p.1000

2023

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A Review on the Deep Learning-based Surface Reconstruction from the Point Clouds

Temperature-Switching During Irradiation as a Test for ELDRS in Linear Bipolar Devices

Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs

High tolerance of proton irradiation of Ge2Sb2Te5 phase change material

Proton radiation effect of NPN-input operational amplifier under different bias conditions

Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs

Fabrication and OSL properties of Eu3+-doped NaCaPO4 glass-ceramics

Influence of channel length and layout on TID for 0.18 μm NMOS transistors

Novel Sm3+ doped BaZn2(PO4)2 glass-ceramic for optically stimulated luminescence dosimetry

Optically stimulated luminescence of Dy3+-doped NaCaPO4 glass-ceramics

Fabrication and optical properties of Tb3+‐doped NaCaPO4 glass‐ceramics and their radiation detection applications

Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology

Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers

Fabrication and optical properties of Tb 3+ ‐doped NaCaPO 4 glass‐ceramics and their radiation detection applications

Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers

Synthesis and optical properties of novel Gd3+-doped BaZn2(PO4)2 glass-ceramics for radiation detection applications

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices

Effects of recording time and residue on dose-response by LiMgPO4: Tb, B ceramic disc synthesized via improved sintering process

Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

Double humps and radiation effects of SOI NMOSFET

Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ionizing Radiation Effects on SET in Linear Bipolar Circuits

Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose

Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors

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