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An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.374-377

2014

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Measurement and Extraction of Parasitic Parameters of Quasi-Vertical Schottky Diodes at Submillimeter Wavelengths

IEEE microwave and wireless components letters, 2019-07, Vol.29 (7), p.474-476

2019

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160 GHz Balanced Frequency Quadruplers Based on Quasi-Vertical Schottky Varactors Integrated on Micromachined Silicon

IEEE transactions on terahertz science and technology, 2014-11, Vol.4 (6), p.678-685

2014

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Improved current filament control during Zener diode zapping

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2368-2373

2012

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A Phase Conjugator Based on Fourth-Order Subharmonically Pumped Mixers

IEEE microwave and wireless technology letters (Print), 2024-06, Vol.34 (6), p.671-674

2024

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A New Method to Improve Tradeoff Performance for Advanced Power MOSFETs

IEEE electron device letters, 2009-04, Vol.30 (4), p.416-418

2009

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Gate-Oxide Breakage Assisted by HCI in Advanced STI DeMOS Transistors

IEEE electron device letters, 2012-09, Vol.33 (9), p.1285-1287

2012

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P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

IEEE electron device letters, 2017-04, Vol.38 (4), p.505-508

2017

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Electronic Calibration for Submillimeter-Wave On-Wafer Scattering Parameter Measurements Using Schottky Diodes

IEEE transactions on terahertz science and technology, 2020-11, Vol.10 (6), p.583-592

2020

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A Dual-Band Micromachined On-Wafer Probe with Integrated Diplexer for Ultra-Broadband Measurements to 220 GHz

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, 2023, p.728-731

2023

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Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1758-1762

2010

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Improved Micromachined Terahertz On-Wafer Probe Using Integrated Strain Sensor

IEEE transactions on microwave theory and techniques, 2013-12, Vol.61 (12), p.4613-4620

2013

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Thermal resistance assessment in multi-trenched power devices

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1479-1484

2008

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Improved Trench-Based Power Rectifiers for High-Temperature Smart-Power Applications

IEEE electron device letters, 2009-12, Vol.30 (12), p.1341-1343

2009

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Anomalous Bulk Current Effects in Trench-Based Integrated Power Transistors

IEEE electron device letters, 2008-08, Vol.29 (8), p.909-912

2008

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Spatial distribution of interface traps in DeMOS transistors

IEEE electron device letters, 2004-08, Vol.25 (8), p.577-579

2004

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Detection of pharmaceutical products in untreated hospital wastewater

Quality assurance and safety of crops & food, 2014-01, Vol.6 (4), p.459-467

2014

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A 0-40 GHz On-Wafer Probe With Replaceable Micromachined Silicon Tip

IEEE microwave and wireless components letters, 2016-02, Vol.26 (2), p.110-112

2016

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Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1625-1629

2004

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A family of robust DMOS devices for automotive applications

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.97-100

2012

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Influence of arterial blood pressure and aldosterone on left ventricular hypertrophy in moderate essential hypertension

The American journal of cardiology, 1993-01, Vol.71 (3), p.A17-A20

1993

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Electron trapping and interface trap generation in drain extended PMOS transistors

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.555-559

2005

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Characterization of Micromachined On-Wafer Probes for the 600-900 GHz Waveguide Band

IEEE transactions on terahertz science and technology, 2014-07, Vol.4 (4), p.527-529

2014

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Psychosocial predictors of major affective recurrences in bipolar disorder: a 4-year longitudinal study of patients on prophylactic treatment

Acta psychiatrica Scandinavica, 1996-06, Vol.93 (6), p.420-426

1996

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New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.397-400

2010

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An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

Measurement and Extraction of Parasitic Parameters of Quasi-Vertical Schottky Diodes at Submillimeter Wavelengths

160 GHz Balanced Frequency Quadruplers Based on Quasi-Vertical Schottky Varactors Integrated on Micromachined Silicon

Improved current filament control during Zener diode zapping

A Phase Conjugator Based on Fourth-Order Subharmonically Pumped Mixers

A New Method to Improve Tradeoff Performance for Advanced Power MOSFETs

Gate-Oxide Breakage Assisted by HCI in Advanced STI DeMOS Transistors

P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

Electronic Calibration for Submillimeter-Wave On-Wafer Scattering Parameter Measurements Using Schottky Diodes

A Dual-Band Micromachined On-Wafer Probe with Integrated Diplexer for Ultra-Broadband Measurements to 220 GHz

Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices

Improved Micromachined Terahertz On-Wafer Probe Using Integrated Strain Sensor

Thermal resistance assessment in multi-trenched power devices

Improved Trench-Based Power Rectifiers for High-Temperature Smart-Power Applications

Anomalous Bulk Current Effects in Trench-Based Integrated Power Transistors

Spatial distribution of interface traps in DeMOS transistors

Detection of pharmaceutical products in untreated hospital wastewater

A 0-40 GHz On-Wafer Probe With Replaceable Micromachined Silicon Tip

Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations

A family of robust DMOS devices for automotive applications

Influence of arterial blood pressure and aldosterone on left ventricular hypertrophy in moderate essential hypertension

Electron trapping and interface trap generation in drain extended PMOS transistors

Characterization of Micromachined On-Wafer Probes for the 600-900 GHz Waveguide Band

Psychosocial predictors of major affective recurrences in bipolar disorder: a 4-year longitudinal study of patients on prophylactic treatment

New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge

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