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Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals

Journal of crystal growth, 2017-09, Vol.474, p.89-95

2017

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Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms

Journal of crystal growth, 2017-09, Vol.474, p.110-120

2017

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Density functional theory study of dopant effect on formation energy of intrinsic point defects in germanium crystals

Journal of crystal growth, 2017-09, Vol.474, p.104-109

2017

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Development of a compact scintillator-based high-resolution Compton camera for molecular imaging

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2017-02, Vol.845, p.656-659

2017

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High-precision compton imaging of 4.4 MeV prompt gamma-ray toward an on-line monitor for proton therapy

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2019-08, Vol.936, p.43-45

2019

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Spatially resolved measurement of wideband prompt gamma-ray emission toward on-line monitor for the future proton therapy

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2018-12, Vol.912, p.24-28

2018

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Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

Applied physics letters, 2013-02, Vol.102 (8)

2013

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Development of simple proton CT system with novel correction methods of proton scattering

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2019-04, Vol.924, p.332-338

2019

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Anomalous spectral dependence of optical polarization and its impact on spin detection in InGaAs/GaAs quantum dots

Applied physics letters, 2014-09, Vol.105 (13), p.132106

2014

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Size dependence of electron spin dephasing in InGaAs quantum dots

Applied physics letters, 2015-03, Vol.106 (9), p.093109

2015

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Modeling of Internal Gettering of Nickel and Copper by Oxide Precipitates in Czochralski-Si Wafers

Journal of the Electrochemical Society, 2005, Vol.152 (10), p.G731

Sueoka, K.

2005

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Impact of Plane Thermal Stress near the Melt/Solid Interface on the v/G Criterion for Defect-Free Large Diameter Single Crystal Si Growth

ECS solid state letters, 2014-04, Vol.3 (6), p.P69-P72

2014

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Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.494-497

2006

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Comment on "Experimental Study of the Impact of Stress on the Point Defect Incorporation during Silicon Growth" [ECS Solid State Lett., 3, N5 (2014)]

ECS solid state letters, 2014-02, Vol.3 (5), p.X3-X4

2014

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(Invited) Application of DFT Calculation for the Development of High Quality Si and Ge Substrates: From Ultra Large Diameter Crystal Pulling to Metal Gettering

ECS transactions, 2016, Vol.75 (4), p.111-127

Sueoka, Koji

2016

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Ab initio calculation of the formation energy of charged vacancies in germanium

Physica. B, Condensed matter, 2007-12, Vol.401, p.205-209

2007

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Density Functional Theory Study on Anisotropic Arrangement of Interstitial Oxygen Atoms at (001) Interface of Oxide Precipitates in Si Crystal

ECS journal of solid state science and technology, 2021-12, Vol.10 (12), p.123003

2021

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(Invited) Applications of the Hakoniwa Method to Impurity Atoms Wandering Inside Si Wafers

ECS transactions, 2021-05, Vol.102 (4), p.39-50

2021

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Bond strengths of New Carbon-nitride-Related material C2N2(CH2)

Journal of physics. Conference series, 2012-07, Vol.377 (1)

2012

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Atomic resolved imaging of cleaved NiO(100) surfaces by NC-AFM

Applied surface science, 2000-04, Vol.157 (4), p.218-221

2000

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Density Functional Theory Study on Dependence of Stability of Fe, Cu, and Ni Atoms on Surface Orientation of Si Crystal

ECS journal of solid state science and technology, 2021-09, Vol.10 (9), p.94002

2021

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Inhomogeneous surface electronic properties and charge ordering in epitaxial Fe3O4 films on MgO(001)

Physica Status Solidi (b), 2007-12, Vol.244 (12), p.4482-4485

2007

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A Japanese-specific recurrent mutation and a novel splice site mutation in the LAMC2 gene identified in two Japanese families with Herlitz junctional epidermolysis bullosa

Clinical and experimental dermatology, 2011-06, Vol.36 (4), p.386-392

2011

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Structure, Energetics, and Thermal Stability of Nitrogen-Vacancy-Related Defects in Nitrogen Doped Silicon

Journal of the Electrochemical Society, 2003-12, Vol.150 (12), p.G771

2003

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Doppler Broadening Spectroscopy of Positron Annihilation near Ge and Si (001) Single Crystal Surfaces

ECS solid state letters, 2013-07, Vol.2 (10), p.P89-P90

2013

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Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms

Density functional theory study of dopant effect on formation energy of intrinsic point defects in germanium crystals

Development of a compact scintillator-based high-resolution Compton camera for molecular imaging

High-precision compton imaging of 4.4 MeV prompt gamma-ray toward an on-line monitor for proton therapy

Spatially resolved measurement of wideband prompt gamma-ray emission toward on-line monitor for the future proton therapy

Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

Development of simple proton CT system with novel correction methods of proton scattering

Anomalous spectral dependence of optical polarization and its impact on spin detection in InGaAs/GaAs quantum dots

Size dependence of electron spin dephasing in InGaAs quantum dots

Modeling of Internal Gettering of Nickel and Copper by Oxide Precipitates in Czochralski-Si Wafers

Impact of Plane Thermal Stress near the Melt/Solid Interface on the v/G Criterion for Defect-Free Large Diameter Single Crystal Si Growth

Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals

Comment on "Experimental Study of the Impact of Stress on the Point Defect Incorporation during Silicon Growth" [ECS Solid State Lett., 3, N5 (2014)]

(Invited) Application of DFT Calculation for the Development of High Quality Si and Ge Substrates: From Ultra Large Diameter Crystal Pulling to Metal Gettering

Ab initio calculation of the formation energy of charged vacancies in germanium

Density Functional Theory Study on Anisotropic Arrangement of Interstitial Oxygen Atoms at (001) Interface of Oxide Precipitates in Si Crystal

(Invited) Applications of the Hakoniwa Method to Impurity Atoms Wandering Inside Si Wafers

Bond strengths of New Carbon-nitride-Related material C2N2(CH2)

Atomic resolved imaging of cleaved NiO(100) surfaces by NC-AFM

Density Functional Theory Study on Dependence of Stability of Fe, Cu, and Ni Atoms on Surface Orientation of Si Crystal

Inhomogeneous surface electronic properties and charge ordering in epitaxial Fe3O4 films on MgO(001)

A Japanese-specific recurrent mutation and a novel splice site mutation in the LAMC2 gene identified in two Japanese families with Herlitz junctional epidermolysis bullosa

Structure, Energetics, and Thermal Stability of Nitrogen-Vacancy-Related Defects in Nitrogen Doped Silicon

Doppler Broadening Spectroscopy of Positron Annihilation near Ge and Si (001) Single Crystal Surfaces

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