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Elevated-Metal-Metal-Oxide Thin-Film Transistor: Technology and Characteristics
IEEE electron device letters, 2016-06, Vol.37 (6), p.728-730
2016
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High- $kappa$ /Metal–Gate Stack and Its MOSFET Characteristics
IEEE electron device letters, 2004-06, Vol.25 (6), p.408-410
2004
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Observation of Metal-Layer Stress on Si Nanowires in Gate-All-Around High- \kappa/Metal-Gate Device Structures
IEEE electron device letters, 2007-07, Vol.28 (7), p.558-561
2007
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High-efficiency Metal-insulator-Metal Electron Emitter based on Porous Alumina Film
IEEE electron device letters, 2023-09, Vol.44 (9), p.1-1
2023
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Low Dark-Current Lateral Amorphous-Selenium Metal-Semiconductor-Metal Photodetector
IEEE electron device letters, 2011-09, Vol.32 (9), p.1263-1265
2011
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All-Metal-Nitride RRAM Devices
IEEE electron device letters, 2015-01, Vol.36 (1), p.29-31
2015
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Gate Controlled Three-Terminal Metal Oxide Memristor
IEEE electron device letters, 2018-04, Vol.39 (4), p.500-503
2018
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Stress effects of interconnecting metals on back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric capacitors
IEEE electron device letters, 2023-04, Vol.44 (4), p.1-1
2023
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Dark-Current Suppression in Metal-Germanium-Metal Photodetectors Through Dopant-Segregation in NiGe-Schottky Barrier
IEEE electron device letters, 2008-02, Vol.29 (2), p.161-164
2008
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Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide
IEEE electron device letters, 2017-07, Vol.38 (7), p.894-897
2017
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Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the Metal-Ferroelectric-Insulator-Semiconductor Capacitors
IEEE electron device letters, 2019-07, Vol.40 (7), p.1032-1035
2019
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Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction
IEEE electron device letters, 2020-08, Vol.41 (8), p.1193-1196
2020
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UV-Enhanced a-Si:H Metal-Semiconductor-Metal Photodetector
IEEE electron device letters, 2008-09, Vol.29 (9), p.1007-1010
2008
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Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
IEEE electron device letters, 2019-10, Vol.40 (10), p.1602-1605
2019
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Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function
IEEE electron device letters, 2022-02, Vol.43 (2), p.208-211
2022
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Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors
IEEE electron device letters, 2018-10, Vol.39 (10), p.1508-1511
2018
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High-Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning
IEEE electron device letters, 2007-03, Vol.28 (3), p.235-237
2007
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Improved Current and Jitter Performances of Photoconductive Semiconductor Switch Based on Reduced Graphene Oxide/Metal Electrode
IEEE electron device letters, 2023-02, Vol.44 (2), p.289-292
2023
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A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
IEEE electron device letters, 2010-12, Vol.31 (12), p.1455-1457
2010
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Metal-Free High-Overtone Bulk Acoustic Resonators With Outstanding Acoustic Match and Thermal Stability
IEEE electron device letters, 2023-11, Vol.44 (11), p.1877-1880
2023
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Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor
IEEE electron device letters, 2021-01, Vol.42 (1), p.118-121
2021
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Variability Analysis of TiN Metal-Gate FinFETs
IEEE electron device letters, 2010-06, Vol.31 (6), p.546-548
2010
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Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications
IEEE electron device letters, 2014-07, Vol.35 (7), p.753-755
2014
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Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor With Self-Aligned Definition of the Active Island
IEEE electron device letters, 2018-01, Vol.39 (1), p.35-38
2018
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Contact Analysis of Elemental Transition Metal Electrodes for Complementary 2D-FET Applications Using MoS2 and WSe2
IEEE electron device letters, 2022-07, Vol.43 (7), p.1137-1140
2022
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