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Nanometre-scale electronics with III-V compound semiconductors

Nature (London), 2011-11, Vol.479 (7373), p.317-323

del Alamo, Jesús A

2011

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140

2011

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III–V compound semiconductor transistors—from planar to nanowire structures

MRS bulletin, 2014-08, Vol.39 (8), p.668-677

2014

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Protonic solid-state electrochemical synapse for physical neural networks

Nature communications, 2020-06, Vol.11 (1), p.3134-3134, Article 3134

2020

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289

2008

Volltextzugriff (PDF)

CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning

Nano letters, 2021-07, Vol.21 (14), p.6111-6116

2021

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Use of human induced pluripotent stem cell-derived cardiomyocytes to assess drug cardiotoxicity

Nature protocols, 2018-12, Vol.13 (12), p.3018-3041

2018

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Changes to the Editorial Board

IEEE electron device letters, 2021-04, Vol.42 (4), p.460-460

Del Alamo, Jesus A. Del

2021

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901

2009

Volltextzugriff (PDF)

Electrochemical Ionic Synapses: Progress and Perspectives

Advanced materials (Weinheim), 2023-09, Vol.35 (37), p.e2205169-e2205169

2023

Volltextzugriff (PDF)

Nanosecond protonic programmable resistors for analog deep learning

Science (American Association for the Advancement of Science), 2022-07, Vol.377 (6605), p.539-543

2022

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30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

IEEE electron device letters, 2008-08, Vol.29 (8), p.830-833

2008

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Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2142-2147

2017

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Stability and Reliability of Lateral GaN Power Field-Effect Transistors

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4578-4590

2019

Volltextzugriff (PDF)

Sub-10-nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs

IEEE electron device letters, 2022-06, Vol.43 (6), p.846-849

2022

Volltextzugriff (PDF)

Contribution of the Diastolic Vortex Ring to Left Ventricular Filling

Journal of the American College of Cardiology, 2014-10, Vol.64 (16), p.1711-1721

2014

Volltextzugriff (PDF)

Sampling alternative conformational states of transporters and receptors with AlphaFold2

eLife, 2022-03, Vol.11

2022

Volltextzugriff (PDF)

Linear energy amplification in turbulent channels

Journal of fluid mechanics, 2006-07, Vol.559, p.205-213

2006

Volltextzugriff (PDF)

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

IEEE electron device letters, 2014-05, Vol.35 (5), p.521-523

2014

Volltextzugriff (PDF)

Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs

IEEE electron device letters, 2016-09, Vol.37 (9), p.1104-1107

2016

Volltextzugriff (PDF)

In Situ Thermal Atomic Layer Etching for Sub‑5 nm InGaAs Multigate MOSFETs

Nano letters, 2019-08, Vol.19 (8), p.5159-5166

2019

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Hydrothermal liquefaction of organic resources in biotechnology: how does it work and what can be achieved?

Applied microbiology and biotechnology, 2019-01, Vol.103 (2), p.673-684

2019

Volltextzugriff (PDF)

Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2188-2195

2022

Volltextzugriff (PDF)

High throughput physiological screening of iPSC-derived cardiomyocytes for drug development

Biochimica et biophysica acta, 2016-07, Vol.1863 (7), p.1717-1727

2016

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Nanometre-scale electronics with III-V compound semiconductors

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

III–V compound semiconductor transistors—from planar to nanowire structures

Protonic solid-state electrochemical synapse for physical neural networks

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning

Use of human induced pluripotent stem cell-derived cardiomyocytes to assess drug cardiotoxicity

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Changes to the Editorial Board

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Electrochemical Ionic Synapses: Progress and Perspectives

Nanosecond protonic programmable resistors for analog deep learning

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Sub-10-nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs

Contribution of the Diastolic Vortex Ring to Left Ventricular Filling

Sampling alternative conformational states of transporters and receptors with AlphaFold2

Linear energy amplification in turbulent channels

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs

In Situ Thermal Atomic Layer Etching for Sub‑5 nm InGaAs Multigate MOSFETs

Hydrothermal liquefaction of organic resources in biotechnology: how does it work and what can be achieved?

Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter

High throughput physiological screening of iPSC-derived cardiomyocytes for drug development

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