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Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Science (American Association for the Advancement of Science), 2017-12, Vol.358 (6369), p.1423-1427

2017

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Ultrahigh drive current and large selectivity in GeS selector

Nature communications, 2020-09, Vol.11 (1), p.4636-9, Article 4636

2020

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Elemental electrical switch enabling phase segregation-free operation

Science (American Association for the Advancement of Science), 2021-12, Vol.374 (6573), p.1390-1394

2021

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Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Nano-micro letters, 2021-01, Vol.13 (1), p.33-33, Article 33

2021

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One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Nature communications, 2014-07, Vol.5 (1), p.4086-4086, Article 4086

2014

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Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

Applied physics letters, 2018-03, Vol.112 (13)

2018

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Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application

Applied physics letters, 2018-02, Vol.112 (7)

2018

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Direct atomic insight into the role of dopants in phase-change materials

Nature communications, 2019-08, Vol.10 (1), p.3525-10, Article 3525

2019

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Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge2Sb2Te5 and Its Influence on Crystallization Behavior

Journal of physical chemistry. C, 2019-05, Vol.123 (21), p.13377-13384

2019

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Dynamic evolution of thermally induced element distribution in nitrogen modified phase change materials

Journal of applied physics, 2020-08, Vol.128 (7)

2020

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Strong nonlinear optics in on-chip coupled lithium niobate microdisk photonic molecules

New journal of physics, 2020-07, Vol.22 (7), p.73030

2020

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Electrical switching properties and structural characteristics of GeSe-GeTe films

Nanoscale, 2019-01, Vol.11 (4), p.1595-1603

2019

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Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

ACS applied materials & interfaces, 2020-05, Vol.12 (20), p.23051-23059

2020

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Low-energy phase change memory with graphene confined layer

Applied physics letters, 2016-06, Vol.108 (25)

2016

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Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications

Applied physics letters, 2019-09, Vol.115 (13)

2019

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Observation of van der Waals reconfiguration in superlattice phase change materials

Nanoscale, 2019-09, Vol.11 (36), p.16954-16961

2019

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Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Journal of materials science. Materials in electronics, 2020-04, Vol.31 (8), p.5833-5837

2020

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Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

InfoMat, 2021-09, Vol.3 (9), p.1008-1015

2021

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Direct observation of partial disorder and zipperlike transition in crystalline phase change materials

Physical review materials, 2019-03, Vol.3 (3), Article 033603

2019

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Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5

Communications chemistry, 2019-02, Vol.2 (1), Article 13

2019

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The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory

Applied physics letters, 2014-02, Vol.104 (6)

2014

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Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

Nano futures, 2017-09, Vol.1 (2)

2017

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RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming

IEEE electron device letters, 2014-05, Vol.35 (5), p.536-538

2014

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Mass transport in Ti0.5Sb2Te3 phase-change nanobridge

Acta materialia, 2014-07, Vol.73, p.48-55

2014

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Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors

Thin solid films, 2021-09, Vol.734, p.138837, Article 138837

2021

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Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Ultrahigh drive current and large selectivity in GeS selector

Elemental electrical switch enabling phase segregation-free operation

Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application

Direct atomic insight into the role of dopants in phase-change materials

Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge2Sb2Te5 and Its Influence on Crystallization Behavior

Dynamic evolution of thermally induced element distribution in nitrogen modified phase change materials

Strong nonlinear optics in on-chip coupled lithium niobate microdisk photonic molecules

Electrical switching properties and structural characteristics of GeSe-GeTe films

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

Low-energy phase change memory with graphene confined layer

Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications

Observation of van der Waals reconfiguration in superlattice phase change materials

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

Direct observation of partial disorder and zipperlike transition in crystalline phase change materials

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5

The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory

Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming

Mass transport in Ti0.5Sb2Te3 phase-change nanobridge

Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors

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