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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289

2008

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140

2011

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901

2009

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Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Applied physics letters, 2022-02, Vol.120 (8)

2022

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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Microelectronics and reliability, 2010-06, Vol.50 (6), p.767-773

2010

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Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Microelectronics and reliability, 2011-02, Vol.51 (2), p.201-206

2011

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High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Microelectronics and reliability, 2010-06, Vol.50 (6), p.758-762

2010

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Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2667-2674

2012

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Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Applied physics letters, 2009-07, Vol.95 (3), p.033510-033510-3

2009

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Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

ECS transactions, 2023-09, Vol.112 (2), p.9-20

2023

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Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23)

2010

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Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3132-3138

2017

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Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.890-895

2019

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Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2012-04, Vol.100 (17), p.172109-172109-3

2012

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A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.665-667

2008

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Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1611-1613

2011

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Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Microelectronics and reliability, 2012, Vol.52 (1), p.33-38

2012

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Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23), p.233509-233509-3

2010

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Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

Meeting abstracts (Electrochemical Society), 2023-12, Vol.MA2023-02 (32), p.1575-1575

2023

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Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Information Security Applications, 2018, Vol.10763, p.150-161

2018

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Physics of electrical degradation in gallium nitride high electron mobility transistors

Joh, Jungwoo

2009

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Buildability and Mechanical Properties of 3D Printed Concrete

Materials, 2020-11, Vol.13 (21), p.4919

2020

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Interlayer Strength of 3D-Printed Mortar Reinforced by Postinstalled Reinforcement

Materials, 2021-11, Vol.14 (21), p.6630

2021

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Torsional Behavior of High-Strength Concrete Beams with Minimum Reinforcement Ratio

Advances in civil engineering, 2019-01, Vol.2019 (2019), p.1-11

2019

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Physics of electrical degradation in gallium nitride high electron mobility transistors

Buildability and Mechanical Properties of 3D Printed Concrete

Interlayer Strength of 3D-Printed Mortar Reinforced by Postinstalled Reinforcement

Torsional Behavior of High-Strength Concrete Beams with Minimum Reinforcement Ratio

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