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Single Event Transients in Digital CMOS-A Review

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1767-1790

2013

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Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3483-3488

2009

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Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3115-3121

2009

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Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3477-3482

2009

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Improvement of SOI MOSFET RF Performance by Implant Optimization

IEEE microwave and wireless components letters, 2010-05, Vol.20 (5), p.271-273

2010

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2010 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3005-3005

2010

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Three-dimensional integration of silicon-on-insulator RF amplifier

Electronics letters, 2008, Vol.44 (12), p.746-747

2008

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Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors

Microelectronics and reliability, 2011-06, Vol.51 (6), p.1113-1117

2011

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Generation and Propagation of Single Event Transients in 0.18- \mu Fully Depleted SOI

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2854-2860

2008

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The role of nanoclusters in reducing hole trapping in ion implanted oxides

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1947-1953

2003

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Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1776-1783

2003

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Asymmetric SEU in SOI SRAMs

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2481-2486

2005

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Fabrication of self-aligned 90-nm fully depleted SOI CMOS SLOTFETs

IEEE electron device letters, 2001-07, Vol.22 (7), p.345-347

2001

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Hardness Assurance Testing for Proton Direct Ionization Effects

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.1197-1202

2012

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SET Characterization in Logic Circuits Fabricated in a 3DIC Technology

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2555-2562

2011

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Radiation Effects in 3D Integrated SOI SRAM Circuits

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2845-2854

2011

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Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2968-2975

2011

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Electron and hole trapping in thermal oxides that have been ion implanted

Microelectronic engineering, 2001-11, Vol.59 (1), p.285-289

2001

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Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.820-826

2011

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Comparison of charge trapping in undoped oxides made by low- and high-temperature deposition techniques

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2107-2113

2001

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Anomalous drain voltage dependence in bias temperature instability measurements on high-[kappa] field effect transistors

Microelectronics and reliability, 2011-06, Vol.51 (6), p.1113-1117

2011

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Generation and Propagation of Single Event Transients in 0.18-[Formula Omitted] Fully Depleted SOI

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2854

2008

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Three-dimensional integration of silicon-on-insulator RF amplifier

Electronics letters, 2008-06, Vol.44 (12), p.1-1

2008

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Comparison of charge trapping made in undoped oxides by low- and high-temperature deposition techniques

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2107-2113

2001

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Enhanced resolution for future fabrication

IEEE circuits and devices magazine, 2003-01, Vol.19 (1), p.43-47

2003

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Single Event Transients in Digital CMOS-A Review

Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

Improvement of SOI MOSFET RF Performance by Implant Optimization

2010 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

Three-dimensional integration of silicon-on-insulator RF amplifier

Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors

Generation and Propagation of Single Event Transients in 0.18- \mu Fully Depleted SOI

The role of nanoclusters in reducing hole trapping in ion implanted oxides

Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET

Asymmetric SEU in SOI SRAMs

Fabrication of self-aligned 90-nm fully depleted SOI CMOS SLOTFETs

Hardness Assurance Testing for Proton Direct Ionization Effects

SET Characterization in Logic Circuits Fabricated in a 3DIC Technology

Radiation Effects in 3D Integrated SOI SRAM Circuits

Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

Electron and hole trapping in thermal oxides that have been ion implanted

Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

Comparison of charge trapping in undoped oxides made by low- and high-temperature deposition techniques

Anomalous drain voltage dependence in bias temperature instability measurements on high-[kappa] field effect transistors

Generation and Propagation of Single Event Transients in 0.18-[Formula Omitted] Fully Depleted SOI

Three-dimensional integration of silicon-on-insulator RF amplifier

Comparison of charge trapping made in undoped oxides by low- and high-temperature deposition techniques

Enhanced resolution for future fabrication

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