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A New Class of Versatile Chiral-Bridged Atropisomeric Diphosphine Ligands: Remarkably Efficient Ligand Syntheses and Their Applications in Highly Enantioselective Hydrogenation Reactions

Journal of the American Chemical Society, 2006-05, Vol.128 (17), p.5955-5965

2006

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A New Atropisomeric P,N Ligand for Rhodium-Catalyzed Asymmetric Hydroboration

Journal of organic chemistry, 2002-05, Vol.67 (9), p.2769-2777

2002

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Optimal product positioning with consideration of negative utility effect on consumer choice rule

Decision Support Systems, 2012-12, Vol.54 (1), p.402-413

2012

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Novel core-shell particles with poly( n-butyl acrylate) cores and chitosan shells as an antibacterial coating for textiles

Polymer (Guilford), 2005-11, Vol.46 (23), p.10538-10543

2005

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Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

IEEE electron device letters, 2008-05, Vol.29 (5), p.518-521

2008

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Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2430-2439

2005

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IEEE_Xplore

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

IEEE electron device letters, 2006-09, Vol.27 (9), p.765-768

2006

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IEEE_Xplore

Germanium pMOSFETs with Schottky-Barrier germanide S/D, high-κ gate dielectric and metal gate

IEEE electron device letters, 2005-02, Vol.26 (2), p.81-83

2005

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Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

IEEE electron device letters, 2006-01, Vol.27 (1), p.31-33

2006

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IEEE_Xplore

Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2258-2264

2005

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IEEE_Xplore

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

IEEE electron device letters, 2007-10, Vol.28 (10), p.909-912

2007

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IEEE_Xplore

Platinum and platinum–ruthenium nanoparticles supported on ordered mesoporous carbon and their electrocatalytic performance for fuel cell reactions

Electrochimica acta, 2005-05, Vol.50 (15), p.3131-3141

2005

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Polycrystalline Si Nanowire SONOS Nonvolatile Memory Cell Fabricated on a Gate-All-Around (GAA) Channel Architecture

IEEE electron device letters, 2009-03, Vol.30 (3), p.246-249

2009

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IEEE_Xplore

Fast DNBTI components in p-MOSFET with SiON dielectric

IEEE electron device letters, 2005-11, Vol.26 (11), p.826-828

2005

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IEEE_Xplore

Metal gate work function engineering on gate leakage of MOSFETs

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1783-1789

2004

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IEEE_Xplore

Synthesis and Characterization of Blue-Light-Emitting Alternating Copolymers of 9,9-Dihexylfluorene and 9-Arylcarbazole

Macromolecules, 2005-06, Vol.38 (12), p.4970-4976

2005

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Synthesis of titania–silica mixed oxide mesoporous materials, characterization and photocatalytic properties

Applied catalysis. A, General, 2005-04, Vol.284 (1), p.193-198

2005

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Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

IEEE electron device letters, 2005-10, Vol.26 (10), p.758-760

2005

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IEEE_Xplore

A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

IEEE electron device letters, 2004-09, Vol.25 (9), p.631-633

2004

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Work function tuning of metal nitride electrodes for advanced CMOS devices

Thin solid films, 2006-05, Vol.504 (1), p.174-177

2006

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Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

IEEE electron device letters, 2007-11, Vol.28 (11), p.984-986

2007

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IEEE_Xplore

Widely Tunable Work Function TaN/Ru Stacking Layer on HfLaO Gate Dielectric

IEEE electron device letters, 2008-01, Vol.29 (1), p.50-53

2008

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IEEE_Xplore

Preparation of colloidal microporous carbon spheres from furfuryl alcohol

Carbon (New York), 2005-07, Vol.43 (8), p.1709-1715

2005

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Red electroluminescence and photoluminescence properties of new porphyrin compounds

Chemical physics letters, 2003-12, Vol.382 (5), p.561-566

2003

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A survey of the health and safety conditions of apartment buildings in Hong Kong

Building and environment, 2008-05, Vol.43 (5), p.764-775

2008

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A New Class of Versatile Chiral-Bridged Atropisomeric Diphosphine Ligands: Remarkably Efficient Ligand Syntheses and Their Applications in Highly Enantioselective Hydrogenation Reactions

A New Atropisomeric P,N Ligand for Rhodium-Catalyzed Asymmetric Hydroboration

Optimal product positioning with consideration of negative utility effect on consumer choice rule

Novel core-shell particles with poly( n-butyl acrylate) cores and chitosan shells as an antibacterial coating for textiles

Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

Germanium pMOSFETs with Schottky-Barrier germanide S/D, high-κ gate dielectric and metal gate

Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

Platinum and platinum–ruthenium nanoparticles supported on ordered mesoporous carbon and their electrocatalytic performance for fuel cell reactions

Polycrystalline Si Nanowire SONOS Nonvolatile Memory Cell Fabricated on a Gate-All-Around (GAA) Channel Architecture

Fast DNBTI components in p-MOSFET with SiON dielectric

Metal gate work function engineering on gate leakage of MOSFETs

Synthesis and Characterization of Blue-Light-Emitting Alternating Copolymers of 9,9-Dihexylfluorene and 9-Arylcarbazole

Synthesis of titania–silica mixed oxide mesoporous materials, characterization and photocatalytic properties

Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

Work function tuning of metal nitride electrodes for advanced CMOS devices

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Widely Tunable Work Function TaN/Ru Stacking Layer on HfLaO Gate Dielectric

Preparation of colloidal microporous carbon spheres from furfuryl alcohol

Red electroluminescence and photoluminescence properties of new porphyrin compounds

A survey of the health and safety conditions of apartment buildings in Hong Kong

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