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Determining Realistic Parameters for the Double Exponential Law that Models Transient Current Pulses

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1813-1818

2014

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Heavy Ion SEU Cross Section Calculation Based on Proton Experimental Data, and Vice Versa

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3564-3571

2014

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Analytical Method to Evaluate Soft Error Rate Due to Alpha Contamination

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4059-4066

2013

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Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1739-1746

2014

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Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1293-1299

2013

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Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1306-1310

2013

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Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1623-1632

2021

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Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1365-1373

2020

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Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4166-4174

2013

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On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum

Microelectronics and reliability, 2012, Vol.52 (1), p.124-129

2012

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Impact of Single Event Gate Rupture and Latent Defects on Power MOSFETs Switching Operation

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1856-1864

2014

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Development of Monte Carlo Modeling for Neutron-Induced Failures of Trench FieldStop IGBT

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2748-2754

2011

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Effect of Ion Energy on Power MOSFET's Oxide Reliability

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.786-791

2012

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Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1581-1589

2020

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Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1465-1472

2019

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Effect of the Uranium Decay Chain Disequilibrium on Alpha Disintegration Rate

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2793-2797

2011

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Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability

Journal of non-crystalline solids, 2005-12, Vol.351 (52-54), p.3834-3838

2005

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High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors

Microelectronics and reliability, 2011-12, Vol.51 (12), p.2093-2096

2011

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On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Dose Rate Switching Technique on ELDRS-Free Bipolar Devices

IEEE transactions on nuclear science, 2016-08, Vol.63 (4), p.2065-2071

2016

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Doping-Type Dependence of Damage in Silicon Diodes Exposed to X-Ray, Proton, and He ^ Irradiations

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.1925-1930

2007

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The Power Law Shape of Heavy Ions Experimental Cross Section

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.427-433

2017

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Tools for modeling radioactive contaminants in chip materials

Semiconductor science and technology, 2017-03, Vol.32 (3), p.34001

2017

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Testing a Commercial MRAM Under Neutron and Alpha Radiation in Dynamic Mode

IEEE transactions on nuclear science, 2013-08, Vol.60 (4), p.2617-2622

2013

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An Analytical Model to Quantify Decay Chain Disequilibrium-Application to the Thorium Decay Chain

IEEE transactions on nuclear science, 2014-06, Vol.61 (3), p.1414-1419

2014

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Determining Realistic Parameters for the Double Exponential Law that Models Transient Current Pulses

Heavy Ion SEU Cross Section Calculation Based on Proton Experimental Data, and Vice Versa

Analytical Method to Evaluate Soft Error Rate Due to Alpha Contamination

Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model

Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET

Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation

On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum

Impact of Single Event Gate Rupture and Latent Defects on Power MOSFETs Switching Operation

Development of Monte Carlo Modeling for Neutron-Induced Failures of Trench FieldStop IGBT

Effect of Ion Energy on Power MOSFET's Oxide Reliability

Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity

Effect of the Uranium Decay Chain Disequilibrium on Alpha Disintegration Rate

Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors

On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

Dose Rate Switching Technique on ELDRS-Free Bipolar Devices

Doping-Type Dependence of Damage in Silicon Diodes Exposed to X-Ray, Proton, and He ^ Irradiations

The Power Law Shape of Heavy Ions Experimental Cross Section

Tools for modeling radioactive contaminants in chip materials

Testing a Commercial MRAM Under Neutron and Alpha Radiation in Dynamic Mode

An Analytical Model to Quantify Decay Chain Disequilibrium-Application to the Thorium Decay Chain

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