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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Thin solid films, 2016-08, Vol.613, p.24-28

2016

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Effects of bone mineral density of the lumbar spine and prevalent vertebral fractures on the risk of immobility

Osteoporosis international, 2010-09, Vol.21 (9), p.1545-1551

2010

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Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Thin solid films, 2014-04, Vol.557, p.76-79

2014

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Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

Thin solid films, 2013-05, Vol.534, p.470-473

2013

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Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates

Journal of crystal growth, 2014-09, Vol.401, p.758-761

2014

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Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

Applied physics letters, 2012-05, Vol.100 (22), p.222102-222102-4

2012

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Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

Applied physics letters, 2006-11, Vol.89 (20), p.201102-201102-3

2006

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Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

IEEE journal of selected topics in quantum electronics, 2012-11, Vol.18 (6), p.1830-1838

2012

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Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Physical review. B, Condensed matter and materials physics, 2009-11, Vol.80 (20), Article 205206

2009

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Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

Applied physics letters, 2007-07, Vol.91 (1), p.011104-011104-3

2007

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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Journal of crystal growth, 2013-09, Vol.378, p.251-253

2013

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Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

Applied physics letters, 2009-09, Vol.95 (12)

2009

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Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

Applied physics letters, 2002-07, Vol.81 (5), p.847-849

2002

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In-plane strain fluctuation in strained-Si/SiGe heterostructures

Applied physics letters, 2003-11, Vol.83 (21), p.4339-4341

2003

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Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Applied physics letters, 1995-05, Vol.66 (22), p.3024-3026

1995

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Compressive strain dependence of hole mobility in strained Ge channels

Applied physics letters, 2005-11, Vol.87 (19), p.192102-192102-3

2005

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Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique

Journal of applied physics, 2010-05, Vol.107 (10), p.103509-103509-5

2010

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Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Applied physics letters, 1992-08, Vol.61 (5), p.557-559

1992

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Observation of whispering-gallery modes in Si microdisks at room temperature

Applied physics letters, 2007-04, Vol.90 (14), p.141102-141102-3

2007

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Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

Applied physics letters, 1998-03, Vol.72 (13), p.1617-1619

1998

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AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

Journal of electron spectroscopy and related phenomena, 2013-10, Vol.190, p.295-301

2013

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Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

Applied physics letters, 1997-07, Vol.71 (2), p.258-260

1997

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Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

Applied physics letters, 2004-09, Vol.85 (13), p.2514-2516

2004

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Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping

Applied physics letters, 2006-06, Vol.88 (25)

2006

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Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method

Journal of physics. Conference series, 2013-01, Vol.417 (1), p.12008-5

2013

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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Effects of bone mineral density of the lumbar spine and prevalent vertebral fractures on the risk of immobility

Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates

Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

In-plane strain fluctuation in strained-Si/SiGe heterostructures

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Compressive strain dependence of hole mobility in strained Ge channels

Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Observation of whispering-gallery modes in Si microdisks at room temperature

Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping

Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method

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