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Racial and gender differences in the relationship between sarcopenia and bone mineral density among older adults

Osteoporosis international, 2021-05, Vol.32 (5), p.841-851

2021

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Efficacy and safety of PI3K/Akt/mTOR inhibitors combined with trastuzumab therapy for HER2-positive breast cancer: a meta-analysis

European review for medical and pharmacological sciences, 2022-10, Vol.26 (20), p.7667

2022

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A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Heterojunction bipolar transistors with hydrogenated amorphous silicon contacts on crystalline silicon

Electronics letters, 2012-08, Vol.48 (18), p.1161-1163

2012

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History and future perspective of the modern silicon bipolar transistor

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2485-2491

Ning, T.H.

2001

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Why BiCMOS and SOI BiCMOS?

IBM journal of research and development, 2002-03, Vol.46 (2.3), p.181-186

Ning, T. H.

2002

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A room temperature 0.1 μm CMOS on SOI

IEEE transactions on electron devices, 1994-12, Vol.41 (12), p.2405-2412

1994

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SOI lateral bipolar transistor with drive current >3mA/μm

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013, p.1-2

2013

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High-field capture of electrons by Coulomb-attractive centers in silicon dioxide

Journal of applied physics, 1976-01, Vol.47 (7), p.3203-3208

Ning, T. H.

1976

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Heterojunction bipolar transistors with hydrogenated amorphous silicon contacts on crystalline silicon

Electronics letters, 2012-08, Vol.48 (18), p.1

2012

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Polysilicon-emitter SiGe-base bipolar transistors-what happens when Ge gets into the emitter?

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1346-1352

Ning, T.H.

2003

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Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2353-2357

2005

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On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI

IEEE journal of the Electron Devices Society, 2013-01, Vol.1 (1), p.21-27

2013

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Advancing the state of the art in high-performance logic and array technology

IBM journal of research and development, 1992-09, Vol.36 (5), p.821-828

1992

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Hot-electron-induced instability in 0.5- mu m p-channel MOSFETs patterned using synchrotron X-ray lithography

IEEE electron device letters, 1989-07, Vol.10 (7), p.327-329

1989

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High-performance devices for a 0.15- mu m CMOS technology

IEEE electron device letters, 1993-10, Vol.14 (10), p.466-468

1993

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Thermal reemission of trapped electrons in SiO2

Journal of applied physics, 1978-01, Vol.49 (12), p.5997-6003

Ning, T. H

1978

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Bipolar trends

Proceedings of the IEEE, 1986-12, Vol.74 (12), p.1669-1677

1986

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A submicrometer high-performance bipolar technology

IEEE electron device letters, 1989-08, Vol.10 (8), p.364-366

1989

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On the narrow-emitter effect of advanced shallow-profile bipolar transistors

IEEE transactions on electron devices, 1988-11, Vol.35 (11), p.1942-1950

1988

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An advanced high-performance trench-isolated self-aligned bipolar technology

IEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2246-2254

1987

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Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors

IEEE transactions on electron devices, 1991-04, Vol.38 (4), p.941-943

1991

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Trends in CMOS technology and application development

Materials chemistry and physics, 1997-10, Vol.50 (3), p.261-265

Ning, Tak H

1997

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Sub-300-ps CBL circuits

IEEE electron device letters, 1989-11, Vol.10 (11), p.484-486

1989

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Design considerations of high-performance narrow-emitter bipolar transistors

IEEE electron device letters, 1987-04, Vol.8 (4), p.174-175

1987

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Racial and gender differences in the relationship between sarcopenia and bone mineral density among older adults

Efficacy and safety of PI3K/Akt/mTOR inhibitors combined with trastuzumab therapy for HER2-positive breast cancer: a meta-analysis

A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

Heterojunction bipolar transistors with hydrogenated amorphous silicon contacts on crystalline silicon

History and future perspective of the modern silicon bipolar transistor

Why BiCMOS and SOI BiCMOS?

A room temperature 0.1 μm CMOS on SOI

SOI lateral bipolar transistor with drive current >3mA/μm

High-field capture of electrons by Coulomb-attractive centers in silicon dioxide

Heterojunction bipolar transistors with hydrogenated amorphous silicon contacts on crystalline silicon

Polysilicon-emitter SiGe-base bipolar transistors-what happens when Ge gets into the emitter?

Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI

On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI

Advancing the state of the art in high-performance logic and array technology

Hot-electron-induced instability in 0.5- mu m p-channel MOSFETs patterned using synchrotron X-ray lithography

High-performance devices for a 0.15- mu m CMOS technology

Thermal reemission of trapped electrons in SiO2

Bipolar trends

A submicrometer high-performance bipolar technology

On the narrow-emitter effect of advanced shallow-profile bipolar transistors

An advanced high-performance trench-isolated self-aligned bipolar technology

Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors

Trends in CMOS technology and application development

Sub-300-ps CBL circuits

Design considerations of high-performance narrow-emitter bipolar transistors

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