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ZnO Devices and Applications: A Review of Current Status and Future Prospects

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1255-1268

2010

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Micro-LEDs, a Manufacturability Perspective

Applied sciences, 2019-03, Vol.9 (6), p.1206

2019

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Luminescence properties of defects in GaN

Journal of applied physics, 2005-03, Vol.97 (6), p.061301-061301-95

2005

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Microwave ferrites, part 1: fundamental properties

Journal of materials science. Materials in electronics, 2009-09, Vol.20 (9), p.789-834

2009

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Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Applied physics letters, 2008-10, Vol.93 (17), p.171113-171113-3

2008

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Doping Asymmetry Problem in ZnO: Current Status and Outlook

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1269-1280

2010

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On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p -doped quantum well barriers

Applied physics letters, 2008-09, Vol.93 (12), p.121107-121107-3

2008

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GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1180-1196

2010

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Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure

Applied physics letters, 2024-03, Vol.124 (11)

2024

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Recent Development of Boron Nitride towards Electronic Applications

Advanced electronic materials, 2017-05, Vol.3 (5), p.n/a

2017

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Determination of carrier diffusion length in GaN

Journal of applied physics, 2015-01, Vol.117 (1)

2015

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Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Crystals (Basel), 2017-10, Vol.7 (10), p.300

2017

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Microwave ferrites, part 2: passive components and electrical tuning

Journal of materials science. Materials in electronics, 2009-10, Vol.20 (10), p.911-952

2009

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Carrier dynamics in bulk GaN

Journal of applied physics, 2012-01, Vol.111 (2), p.023702-023702-8

2012

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Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary

ACS applied materials & interfaces, 2018-10, Vol.10 (43), p.37651-37660

2018

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Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template

Physica status solidi. A, Applications and materials science, 2023-06, Vol.220 (11), p.n/a

2023

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Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-03, Vol.38 (2)

2020

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Hot-Electron Microwave Noise and Energy Relaxation in (Be)MgZnO/ZnO Heterostructures

Crystals (Basel), 2024-01, Vol.14 (1), p.75

2024

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High‐Performance BeMgZnO/ZnO Heterostructure Field‐Effect Transistors

Physica status solidi. PSS-RRL. Rapid research letters, 2020-12, Vol.14 (12), p.n/a

2020

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Wide Bandgap Semiconductor-Based Surface-Emitting Lasers: Recent Progress in GaN-Based Vertical Cavity Surface-Emitting Lasers and GaN-/ZnO-Based Polariton Lasers

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1220-1233

2010

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InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-09, Vol.31 (5)

2013

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High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Applied physics letters, 2007-09, Vol.91 (13)

2007

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Determination of hot-electron drift velocity in (Be)ZnMgO/ZnO 2DEG channels

Physica scripta, 2023-01, Vol.98 (1), p.15808

2023

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High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2021-10, Vol.15 (10), p.n/a

2021

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Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1127-1139

2010

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ZnO Devices and Applications: A Review of Current Status and Future Prospects

Micro-LEDs, a Manufacturability Perspective

Luminescence properties of defects in GaN

Microwave ferrites, part 1: fundamental properties

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Doping Asymmetry Problem in ZnO: Current Status and Outlook

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p -doped quantum well barriers

GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure

Recent Development of Boron Nitride towards Electronic Applications

Determination of carrier diffusion length in GaN

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Microwave ferrites, part 2: passive components and electrical tuning

Carrier dynamics in bulk GaN

Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary

Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template

Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy

Hot-Electron Microwave Noise and Energy Relaxation in (Be)MgZnO/ZnO Heterostructures

High‐Performance BeMgZnO/ZnO Heterostructure Field‐Effect Transistors

Wide Bandgap Semiconductor-Based Surface-Emitting Lasers: Recent Progress in GaN-Based Vertical Cavity Surface-Emitting Lasers and GaN-/ZnO-Based Polariton Lasers

InGaN light-emitting diodes: Efficiency-limiting processes at high injection

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Determination of hot-electron drift velocity in (Be)ZnMgO/ZnO 2DEG channels

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition

Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

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