UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Genetic variation across the human olfactory receptor repertoire alters odor perception

Proceedings of the National Academy of Sciences - PNAS, 2019-05, Vol.116 (19), p.9475-9480

2019

Volltextzugriff (PDF)

Current SiC technology for power electronic devices beyond Si

Microelectronic engineering, 2006, Vol.83 (1), p.2-4

Matsunami, H.

2006

Volltextzugriff (PDF)

Agonists of G‑Protein-Coupled Odorant Receptors Are Predicted from Chemical Features

The journal of physical chemistry letters, 2018-05, Vol.9 (9), p.2235-2240

2018

Volltextzugriff (PDF)

Transient Receptor Potential (TRP) Channels and Taste Sensation

Journal of Dental Research, 2009-03, Vol.88 (3), p.212-218

2009

Volltextzugriff (PDF)

Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

Applied physics letters, 2005-08, Vol.87 (5), p.051912-051912-3

2005

Volltextzugriff (PDF)

Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001)

Journal of applied physics, 2004-07, Vol.96 (1), p.224-228

2004

Volltextzugriff (PDF)

Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy

Applied physics letters, 2005-03, Vol.86 (12)

2005

Volltextzugriff (PDF)

Performance limiting surface defects in SiC epitaxial p-n junction diodes

IEEE transactions on electron devices, 1999-03, Vol.46 (3), p.471-477

1999

Volltextzugriff (PDF)

A candidate taste receptor gene near a sweet taste locus

Nature neuroscience, 2001-05, Vol.4 (5), p.492-498

2001

Volltextzugriff (PDF)

Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC (0001)

Journal of applied physics, 2005-08, Vol.98 (4), p.043709-043709-7

2005

Volltextzugriff (PDF)

Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

Applied physics letters, 2004-09, Vol.85 (10), p.1716-1718

2004

Volltextzugriff (PDF)

Electrical activation of high-concentration aluminum implanted in 4H-SiC

Journal of applied physics, 2004-11, Vol.96 (9), p.4916-4922

2004

Volltextzugriff (PDF)

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

IEEE electron device letters, 1999-12, Vol.20 (12), p.611-613

1999

Volltextzugriff (PDF)

High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

Applied physics letters, 2002-03, Vol.80 (9), p.1586-1588

2002

Volltextzugriff (PDF)

Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices

Physica status solidi. A, Applied research, 1997-07, Vol.162 (1), p.389-408

1997

Volltextzugriff (PDF)

4H-polytype AlN grown on 4H-SiC(112̄0) substrate by polytype replication

Applied physics letters, 2003-12, Vol.83 (25), p.5208-5210

2003

Volltextzugriff (PDF)

High performance of high-voltage 4H-SiC Schottky barrier diodes

IEEE electron device letters, 1995-06, Vol.16 (6), p.280-282

1995

Volltextzugriff (PDF)

Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy

Journal of crystal growth, 2002-04, Vol.237-239, p.1114-1117

2002

Volltextzugriff (PDF)

Effects of C/Si ratio in fast epitaxial growth of 4H–SiC(0 0 0 1) by vertical hot-wall chemical vapor deposition

Journal of crystal growth, 2005-08, Vol.281 (2), p.370-376

2005

Volltextzugriff (PDF)

Step-Controlled Epitaxial Growth of High-Quality SiC Layers

physica status solidi (b), 1997-07, Vol.202 (1), p.247-262

1997

Volltextzugriff (PDF)

Functional Expression of Mammalian Odorant Receptors

Chemical senses, 2005-01, Vol.30 (suppl-1), p.i95-i96

Matsunami, Hiroaki

2005

Volltextzugriff (PDF)

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.112-117

2005

Volltextzugriff (PDF)

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing

Materials science forum, 2006-10, Vol.527-529, p.987-990

2006

Volltextzugriff (PDF)

Growth and characterization of 4H–SiC in vertical hot-wall chemical vapor deposition

Journal of crystal growth, 2003-07, Vol.255 (1), p.136-144

2003

Volltextzugriff (PDF)

Silicon Carbide Technology in New Era

Materials science forum, 2002-04, Vol.389-393, p.3-8

Matsunami, Hiroyuki

2002

Volltextzugriff (PDF)

1 – 25 von 1.079

Suche als RSS-Feed

Aktive Filter

PublikationsformBücher

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(899)
Mit Volltextzugriff
(932)

Publikationsform

Sprache

Englisch
(1.013)
Japanisch
(413)
Deutsch
(2)
Russisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(673)
Physical Sciences
(376)
Physics
(368)
Physics, Applied
(233)
Technology
(221)
Life Sciences & Biomedicine
(215)
Materials Science
(203)
Humans
(195)
Exact Sciences And Technology
(180)
Materials Science, Multidisciplinary
(140)
Biological And Medical Sciences
(118)
Male
(110)
Female
(109)
Animals
(102)
Medical Sciences
(80)
Adult
(77)
Middle Aged
(70)
Physics, Condensed Matter
(68)
Silicon Carbide
(55)
Applied Sciences
(54)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Ingenta
(375)
MEDLINE
(281)
Elsevier ScienceDirect Journals Complete
(265)
Publisher website
(265)
EZB Electronic Journals Library
(255)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(201)
LWW Total
(117)
Wiley-Blackwell Journals
(73)
IngentaConnect Journals
(70)
AIP Journals Complete
(70)
American Physical Society
(64)
PROLA - Physical Review Online Archive
(58)
Wiley Online Library
(55)
SpringerLink
(47)
IEL
(43)
Taylor & Francis Online
(29)
Taylor & Francis
(29)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(28)
Nature_系列刊
(22)
Taylor & Francis Journals
(20)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Genetic variation across the human olfactory receptor repertoire alters odor perception

Current SiC technology for power electronic devices beyond Si

Agonists of G‑Protein-Coupled Odorant Receptors Are Predicted from Chemical Features

Transient Receptor Potential (TRP) Channels and Taste Sensation

Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001)

Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy

Performance limiting surface defects in SiC epitaxial p-n junction diodes

A candidate taste receptor gene near a sweet taste locus

Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC (0001)

Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

Electrical activation of high-concentration aluminum implanted in 4H-SiC

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices

4H-polytype AlN grown on 4H-SiC(112̄0) substrate by polytype replication

High performance of high-voltage 4H-SiC Schottky barrier diodes

Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy

Effects of C/Si ratio in fast epitaxial growth of 4H–SiC(0 0 0 1) by vertical hot-wall chemical vapor deposition

Step-Controlled Epitaxial Growth of High-Quality SiC Layers

Functional Expression of Mammalian Odorant Receptors

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing

Growth and characterization of 4H–SiC in vertical hot-wall chemical vapor deposition

Silicon Carbide Technology in New Era

Aktive Filter

Suchergebnisse filtern