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Culture of Helicobacter pylori from domestic water samples--the impact of strain variation on growth on solid and in liquid media

Water science and technology, 2006-01, Vol.54 (3), p.147

2006

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iDASH: integrating data for analysis, anonymization, and sharing

Journal of the American Medical Informatics Association : JAMIA, 2012-03, Vol.19 (2), p.196-201

2012

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VENTS

Collected Poems, 2014, p.225

SAINT-JOHN PERSE

2014

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“Barrierless” Misfit Dislocation Nucleation in SiGe/Si Strained Layer Epitaxy

MRS proceedings, 1992, Vol.263, Article 391

1992

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Partial Dislocations and Critical Thicknesses for Strained Layer Relaxation

MRS proceedings, 1992, Vol.263, Article 421

1992

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Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

MRS proceedings, 1992, Vol.263

1992

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Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

MRS proceedings, 1992, Vol.263, Article 35

1992

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Observation of the Ordered CoPt3 Alloy in Co-Pt Multilayers

MRS proceedings, 1992, Vol.263

1992

Volltextzugriff (PDF)

The Effect of The Initial Nucleation Temperature on The Misfit Dislocation Structure of InP-on-GaAs Heterostructures

MRS proceedings, 1992, Vol.263, Article 461

1992

Volltextzugriff (PDF)

X-Ray Diffraction Determination of Critical Thickness of InAs and InP on GaAs Grown by Atomic Layer Molecular Beam Epitaxy

MRS proceedings, 1992, Vol.263, Article 473

1992

Volltextzugriff (PDF)

The Effect of Substrate Surface Orientation and Epilayer Thickness on Ingaas/Gaas Epilayer Tilt and Tilt Direction

MRS proceedings, 1992, Vol.263, Article 457

1992

Volltextzugriff (PDF)

Properties and Strain Relaxation below Room Temperature of Epitaxial Pbse and Pb(Se,Te) on Fluoride-Covered Silicon Substrates

MRS proceedings, 1992, Vol.263, Article 415

1992

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Control of threading dislocations in lattice-mismatched heteroepitaxy

MRS proceedings, 1992, Vol.263, Article 485

1992

Volltextzugriff (PDF)

Transmission Electron Microscopy Study of Epitaxial Co/Au and Co/Pd (111) Multilayers

MRS proceedings, 1992, Vol.263, Article 119

1992

Volltextzugriff (PDF)

Strain Relaxation Via Interface Nucleation of Misfit Dislocations in Intermixing Layers

MRS proceedings, 1992, Vol.263, Article 479

1992

Volltextzugriff (PDF)

Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask

MRS proceedings, 1992, Vol.263, Article 359

1992

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Low-Defect-Density Ge on Si for Large-Lattice-Mismatched Semiconductor Integration and Strain-Engineered Devices

MRS proceedings, 1992, Vol.263, Article 491

1992

Volltextzugriff (PDF)

Sticking and Desorption Coefficients of As4 and As2 During Group V and Group III Controlled MBE Growth

MRS proceedings, 1992, Vol.263

Fernandez, Rouel

1992

Volltextzugriff (PDF)

Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy

MRS proceedings, 1992, Vol.263, Article 267

1992

Volltextzugriff (PDF)

Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates

MRS proceedings, 1992, Vol.263

1992

Volltextzugriff (PDF)

Allotaxy: A New Method for Epitaxial Growth of Compound Thin Films

MRS proceedings, 1992, Vol.263, Article 221

1992

Volltextzugriff (PDF)

A New Method of Identifying the Interfacial Structure in the Type-B CoSi2//Si(111) Bicrystal

MRS proceedings, 1992, Vol.263

1992

Volltextzugriff (PDF)

Initial Stages of Growth of Epitaxial InAs Films on InP Substrate

MRS proceedings, 1992, Vol.263, Article 79

1992

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Initial Stage of Solid Phase Epitaxial Growth of GaAs Films on Vicinal Si (001) Substrate

MRS proceedings, 1992, Vol.263, Article 131

1992

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VLPCVD Heteroepitaxial Growth of Very Thin GE-Layers on Si-Substrates

MRS proceedings, 1992, Vol.263, Article 85

1992

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Culture of Helicobacter pylori from domestic water samples--the impact of strain variation on growth on solid and in liquid media

iDASH: integrating data for analysis, anonymization, and sharing

VENTS

“Barrierless” Misfit Dislocation Nucleation in SiGe/Si Strained Layer Epitaxy

Partial Dislocations and Critical Thicknesses for Strained Layer Relaxation

Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

Observation of the Ordered CoPt3 Alloy in Co-Pt Multilayers

The Effect of The Initial Nucleation Temperature on The Misfit Dislocation Structure of InP-on-GaAs Heterostructures

X-Ray Diffraction Determination of Critical Thickness of InAs and InP on GaAs Grown by Atomic Layer Molecular Beam Epitaxy

The Effect of Substrate Surface Orientation and Epilayer Thickness on Ingaas/Gaas Epilayer Tilt and Tilt Direction

Properties and Strain Relaxation below Room Temperature of Epitaxial Pbse and Pb(Se,Te) on Fluoride-Covered Silicon Substrates

Control of threading dislocations in lattice-mismatched heteroepitaxy

Transmission Electron Microscopy Study of Epitaxial Co/Au and Co/Pd (111) Multilayers

Strain Relaxation Via Interface Nucleation of Misfit Dislocations in Intermixing Layers

Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask

Low-Defect-Density Ge on Si for Large-Lattice-Mismatched Semiconductor Integration and Strain-Engineered Devices

Sticking and Desorption Coefficients of As4 and As2 During Group V and Group III Controlled MBE Growth

Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy

Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates

Allotaxy: A New Method for Epitaxial Growth of Compound Thin Films

A New Method of Identifying the Interfacial Structure in the Type-B CoSi2//Si(111) Bicrystal

Initial Stages of Growth of Epitaxial InAs Films on InP Substrate

Initial Stage of Solid Phase Epitaxial Growth of GaAs Films on Vicinal Si (001) Substrate

VLPCVD Heteroepitaxial Growth of Very Thin GE-Layers on Si-Substrates

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