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Monte Carlo simulations of spin transport in nanoscale In0.7Ga0.3As transistors: temperature and size effects

Semiconductor science and technology, 2022-07, Vol.37 (7), p.75009

2022

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Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

IEEE electron device letters, 2019-04, Vol.40 (4), p.510-513

2019

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A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2020-05, Vol.67 (5), p.1-7

2020

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Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.479-485

2024

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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Computer physics communications, 2015-04, Vol.189, p.31-36

2015

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Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Journal of applied physics, 2017-12, Vol.122 (22)

2017

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Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects

IOP conference series. Materials Science and Engineering, 2019, Vol.504 (1)

2019

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Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics

Semiconductor science and technology, 2011-05, Vol.26 (5), p.055007

2011

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Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors

Applied surface science, 2014-03, Vol.295, p.173-179

2014

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Impact of metal grain granularity on three gate-all-around advanced architectures

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.201-205

2021

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Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2178-2185

2009

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The role of probe oxide in local surface conductivity measurements

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Statistical study of the influence of LER and MGG in SOI MOSFET

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45005

2014

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Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

Semiconductor science and technology, 2016-06, Vol.31 (7)

2016

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Multi-scale simulations of a Mo/n+-GaAs Schottky contact for nano-scale III-V MOSFETs

Semiconductor science and technology, 2014-05, Vol.29 (5), p.54003

2014

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Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics

Semiconductor science and technology, 2012-03, Vol.27 (3), p.39501

2012

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Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET

IEEE electron device letters, 2013-02, Vol.34 (2), p.205-207, Article 205

2013

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Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12030

2015

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The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12065

2015

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Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2297-2306

2008

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Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

Microelectronics and reliability, 2010-03, Vol.50 (3), p.360-364

2010

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3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs

Solid-state electronics, 2012-03, Vol.69, p.43-49

2012

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Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study

IEEE transactions on nanotechnology, 2009-03, Vol.8 (2), p.159-166

2009

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Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold

Journal of low-power electronics, 2015-06, Vol.11 (2), p.256-262

2015

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Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO 2 interface charges and quantum mechanical effects

IOP conference series. Materials Science and Engineering, 2019-04, Vol.504, p.12021

2019

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Monte Carlo simulations of spin transport in nanoscale In0.7Ga0.3As transistors: temperature and size effects

Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects

Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics

Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors

Impact of metal grain granularity on three gate-all-around advanced architectures

Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

The role of probe oxide in local surface conductivity measurements

Statistical study of the influence of LER and MGG in SOI MOSFET

Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

Multi-scale simulations of a Mo/n+-GaAs Schottky contact for nano-scale III-V MOSFETs

Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET

Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts

The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs

Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs

Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study

Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold

Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO 2 interface charges and quantum mechanical effects

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