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In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

AIP advances, 2019-07, Vol.9 (7), p.075116-075116-6

2019

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In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

Advances in materials science and engineering, 2023, Vol.2023, p.1-12

2023

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Theory, simulation, fabrication, and characterization of Galois scattering plates for the optical and the THz spectral range

AIP advances, 2021-06, Vol.11 (6), p.065130-065130-10

2021

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Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

Advances in materials science and engineering, 2022, Vol.2022, p.1-7

2022

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Lithography-Free Technology for the Preparation of Digital Microfluidic (DMF) Lab-Chips with Droplet Actuation by Optoelectrowetting (OEW)

International journal of analytical chemistry, 2022, Vol.2022, p.1-6

2022

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Microdroplet Actuation via Light Line Optoelectrowetting (LL-OEW)

International journal of analytical chemistry, 2021-12, Vol.2021, p.3402411-9

2021

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Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

Micromachines (Basel), 2021-04, Vol.12 (5), p.502

2021

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Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Advances in materials science and engineering, 2021, Vol.2021 (1)

2021

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Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

Advances in OptoElectronics (Hindawi), 2014-01, Vol.2014 (2014), p.1-5

2014

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Precise in situ etch depth control of multilayered III-V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Beilstein journal of nanotechnology, 2016, Vol.7 (1), p.1783-1793

2016

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Deep wet etching of fused silica glass for hollow capillary optical leaky waveguides in microfluidic devices

Journal of micromechanics and microengineering, 2001-05, Vol.11 (3), p.257-262

2001

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Microfluidic Optical Shutter Flexibly x - y Actuated via Electrowetting-on-Dielectrics with <20 ms Response Time

Advances in optical technologies, 2018-01, Vol.2017, p.1-5

2018

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Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Advances in OptoElectronics (Hindawi), 2017-01, Vol.2017

2017

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Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)

Applied surface science, 2023-02, Vol.611, p.155769, Article 155769

2023

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Optoelectrowetting (OEW) with push-actuation of microdroplets at small frequencies and OEW equations revisited

Sensors and actuators. A. Physical., 2022-02, Vol.334, p.113331, Article 113331

2022

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Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-09, Vol.39 (5)

2021

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Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

Beilstein journal of nanotechnology, 2011-06, Vol.2 (1), p.333-338

2011

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High shape-accuracy of surface roughnesses upon nano-moulding with optical elastomers

Optical materials, 2021-08, Vol.118, p.111230, Article 111230

2021

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Lithography-Free Technology for the Preparation of Digital Microfluidic

International journal of analytical chemistry, 2022-05, Vol.2022

2022

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Glass surface modification by lithography-free reactive ion etching in an Ar/CF4-plasma for controlled diffuse optical scattering

Surface & coatings technology, 2011-07, Vol.205, p.S419-S424

2011

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Evanescent-field fiber sensor for the water content in lubricating oils with sensitivity increase by dielectrophoresis

Sensors and actuators. A. Physical., 2012-09, Vol.184, p.93-97

2012

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An improved shooting approach for solving the time-independent Schrödinger equation for III/V QW structures

Physics letters. A, 2001-07, Vol.286 (2), p.199-204

2001

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Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

Applied surface science, 2015-02, Vol.328, p.120-124

2015

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Microfluidic Droplet Array as Optical Irises Actuated via Electrowetting

Advances in OptoElectronics (Hindawi), 2018-01, Vol.2018, p.1-8

2018

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Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring

Applied surface science, 2015-12, Vol.357, p.530-538

2015

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In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

Theory, simulation, fabrication, and characterization of Galois scattering plates for the optical and the THz spectral range

Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

Lithography-Free Technology for the Preparation of Digital Microfluidic (DMF) Lab-Chips with Droplet Actuation by Optoelectrowetting (OEW)

Microdroplet Actuation via Light Line Optoelectrowetting (LL-OEW)

Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

Precise in situ etch depth control of multilayered III-V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Deep wet etching of fused silica glass for hollow capillary optical leaky waveguides in microfluidic devices

Microfluidic Optical Shutter Flexibly x - y Actuated via Electrowetting-on-Dielectrics with <20 ms Response Time

Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)

Optoelectrowetting (OEW) with push-actuation of microdroplets at small frequencies and OEW equations revisited

Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

High shape-accuracy of surface roughnesses upon nano-moulding with optical elastomers

Lithography-Free Technology for the Preparation of Digital Microfluidic

Glass surface modification by lithography-free reactive ion etching in an Ar/CF4-plasma for controlled diffuse optical scattering

Evanescent-field fiber sensor for the water content in lubricating oils with sensitivity increase by dielectrophoresis

An improved shooting approach for solving the time-independent Schrödinger equation for III/V QW structures

Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

Microfluidic Droplet Array as Optical Irises Actuated via Electrowetting

Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring

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