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Degradation of III-V inversion-type enhancement-mode MOSFETs

2010 IEEE International Reliability Physics Symposium, 2010, p.536-542

2010

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Scaling of InGaAs MOSFETs into deep-submicron regime (invited)

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-6

2010

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First experimental demonstration of gate-all-around III-V MOSFETs by top-down approach

2011 International Electron Devices Meeting, 2011, p.33.2.1-33.2.4

2011

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Operation-effects merging for collaborative design of personalized product

2015 IEEE 19th International Conference on Computer Supported Cooperative Work in Design (CSCWD), 2015, p.489-493

2015

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A comparative study on the microstructure and magnetic properties of melt-spun Re2Fe14B/α-Fe and Re2Fe14B/Fe3B (Re = Nd, Pr) nanocomposites

IEEE transactions on magnetics, 2005, Vol.41 (10), p.3862-3864

2005

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Reconstruction of the Defect after Cranio-Maxillo-Facial Resection

Journal of Neurological Surgery Part B: Skull Base, 2012, Vol.73 (S 02)

2012

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Indication of Combined Cranio-Maxillo-Facial Resection for Treatment of Cranio-Maxillo-Facial Tumor-Involved Skull Base

Journal of Neurological Surgery Part B: Skull Base, 2012, Vol.73 (S 02)

2012

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Structural joins: a primitive for efficient XML query pattern matching

Proceedings 18th International Conference on Data Engineering, 2002, p.141-152

2002

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RF performance of short channel graphene field-effect transistor

2010 International Electron Devices Meeting, 2010, p.9.6.1-9.6.3

2010

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Analysis of Radio Wave Propagation Attenuation in Complex Environment

2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2023, p.1-3

2023

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Atom probe characterization of an α-Fe/Nd2Fe14B nanocomposite magnet with a remaining amorphous phase

IEEE transactions on magnetics, 1999, Vol.35 (5), p.3295-3297

1999

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Radical Resection of Malignant Tumor Invading the Skull Base with Combined Intra- and Extracranial Approach

Journal of Neurological Surgery Part B: Skull Base, 2012, Vol.73 (S 02)

2012

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Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors

2010 International Electron Devices Meeting, 2010, p.26.4.1-26.4.4

2010

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Effects of channel hot carrier stress on III-V bulk planar MOSFETs

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.3D.4.1-3D.4.7

2012

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Transsphenoidal Meningoencephalocele: Challenge of Early Transsphenoidal Repair

Journal of Neurological Surgery Part B: Skull Base, 2012, Vol.73 (S 02)

2012

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Continuous wave Terahertz photomixer from low temperature grown GaAs with high carrier mobility

35th International Conference on Infrared, Millimeter, and Terahertz Waves, 2010, p.1-2

2010

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High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics

2007 IEEE International Electron Devices Meeting, 2007, p.637-640

2007

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Deformation of Monocrystalline Silicon under Nanoscratching

Advanced materials research, 2008, Vol.41-42, p.15-19

2008

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Estimating answer sizes for XML queries

Lecture notes in computer science, 2002, p.590-608

2002

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High-performance submicron inversion-type enhancement-mode InGaAs MOSFET with maximum drain current of 360 mA/mm and transconductance of 130 mS/mm

2007 65th Annual Device Research Conference, 2007, p.207-208

2007

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Zero distribution of sampled systems with non-rational transfer functions

Proceedings of the 2001 American Control Conference. (Cat. No.01CH37148), 2001, Vol.3, p.2050-2055 vol.3

2001

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On Aggregation Operators for Fuzzy Information Sources

Conceptual Modeling for Advanced Application Domains, 2004, p.223-233

2004

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Using Unscented Kalman Filter for Training the Minimal Resource Allocation Neural Network

Advances in Natural Computation, 2005, p.8-14

2005

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A Fault-Tolerant Architecture for Grid System

Grid and Cooperative Computing - GCC 2004, 2004, p.58-64

2004

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Degradation of III-V inversion-type enhancement-mode MOSFETs

Scaling of InGaAs MOSFETs into deep-submicron regime (invited)

First experimental demonstration of gate-all-around III-V MOSFETs by top-down approach

Operation-effects merging for collaborative design of personalized product

A comparative study on the microstructure and magnetic properties of melt-spun Re2Fe14B/α-Fe and Re2Fe14B/Fe3B (Re = Nd, Pr) nanocomposites

Reconstruction of the Defect after Cranio-Maxillo-Facial Resection

Indication of Combined Cranio-Maxillo-Facial Resection for Treatment of Cranio-Maxillo-Facial Tumor-Involved Skull Base

Structural joins: a primitive for efficient XML query pattern matching

RF performance of short channel graphene field-effect transistor

Analysis of Radio Wave Propagation Attenuation in Complex Environment

Atom probe characterization of an α-Fe/Nd2Fe14B nanocomposite magnet with a remaining amorphous phase

Radical Resection of Malignant Tumor Invading the Skull Base with Combined Intra- and Extracranial Approach

Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors

Effects of channel hot carrier stress on III-V bulk planar MOSFETs

Transsphenoidal Meningoencephalocele: Challenge of Early Transsphenoidal Repair

Continuous wave Terahertz photomixer from low temperature grown GaAs with high carrier mobility

Category 3 Compounds with Four and Three Carbon-Heteroatom Bonds: Volume 18 Four Carbon-Heteroatom Bonds: X-C”X, X=C=X, X2C=X, CX4 ; Volume Editor J. G. Knight ; Responsible Member of the Editorial Board S. V. Ley

High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics

Deformation of Monocrystalline Silicon under Nanoscratching

Estimating answer sizes for XML queries

High-performance submicron inversion-type enhancement-mode InGaAs MOSFET with maximum drain current of 360 mA/mm and transconductance of 130 mS/mm

Zero distribution of sampled systems with non-rational transfer functions

On Aggregation Operators for Fuzzy Information Sources

Using Unscented Kalman Filter for Training the Minimal Resource Allocation Neural Network

A Fault-Tolerant Architecture for Grid System

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