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A new kind of fast quantum-well semiconductor saturable-absorber mirror with low losses for ps pulse generation

International Conference onIndium Phosphide and Related Materials, 2003, 2003, p.247-250

2003

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Carrier lifetime in p-doped InGaAs and InGaAsP

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.758-760

1998

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Passivation of GaAs with Sulphur Surface Treatment and UVCVD Silicon Nitride Cap Layer

Materials science forum, 1995, Vol.185-188, p.179-184

1995

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Minority carrier lifetime in MOCVD-grown C- and Zn-doped InGaAs

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362), 1999, p.127-130

1999

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New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.751-754

1998

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New scanning photoluminescence technique for mapping the lifetime and the doping density: application to carbon doped InGaAs/InP layers and heterostructures

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.525-528

1997

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High speed narrow linewidth 1.55 mu m GaInAs/AlGaInAs MQW DFB lasers

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.618-621

1992

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High quality InGaAsN growth by MOVPE using N/sub 2/ carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.337-340

1998

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InGaAsN laser structures and LEDs at 1.3 /spl mu/m grown on GaAs substrate by AP-MOVPE

Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130), 1998, p.193-194

1998

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Low damage dry-etched grating on a MQW active layer and dislocation-free InP regrowth for 1.55 /spl mu/m complex-coupled DFB lasers fabrication

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.288-291

1998

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Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror

Journal of crystal growth, 1999, Vol.201202, p.837-840

1999

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Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded base

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362), 1999, p.559-562

1999

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Strong Purcell effect for quantum boxes in micropillars and microdisks

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013), 1999, p.524-525

1999

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Strong Purcell effect for quantum boxes in micropillars and microdisks

Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 1999, p.252

1999

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A fast quantum-well semiconductor saturable-absorber mirror with low losses for sub-ps passively mode-locked laser

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666), 2003, p.167

2003

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Luminescence of narrow RIE etched In1-xGaxAs/InP and GaAs/Ga1-ixAlxAs quantum wires

Surface science, 1992, Vol.267 (1-3), p.253-256

1992

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Optical quality improvement of MOVPE grown GaAlAs/GaAs double heterostructures on silicon substrates

Journal of crystal growth, 1990, Vol.107 (1-4), p.483-488

1990

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LOw threshold 1.5μm SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growth

Journal of crystal growth, 1990, Vol.107 (1-4), p.761-766

1990

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Photoluminescence probing of InGaAs-InAl(Ga)As multiquantum well structures: a correlation to laser diode thresholds

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.584

1992

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Carrier lifetime in carbon doped In/sub 0.53/Ga/sub 0.47/As

Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 1996, p.572-575

1996

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High static performance GaInAs/GaInAsP SCH MQW 1.5/spl mu/m wavelength buried ridge stripe lasers

12th IEEE International Conference on Semiconductor Laser, 1990, p.82-83

1990

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Influence of the P type doping of the InP cladding layer on the threshold current density in 1.5/spl mu/m Q.W. lasers

12th IEEE International Conference on Semiconductor Laser, 1990, p.192-193

1990

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A new kind of fast quantum-well semiconductor saturable-absorber mirror with low losses for ps pulse generation

Carrier lifetime in p-doped InGaAs and InGaAsP

Passivation of GaAs with Sulphur Surface Treatment and UVCVD Silicon Nitride Cap Layer

Minority carrier lifetime in MOCVD-grown C- and Zn-doped InGaAs

New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials

New scanning photoluminescence technique for mapping the lifetime and the doping density: application to carbon doped InGaAs/InP layers and heterostructures

High speed narrow linewidth 1.55 mu m GaInAs/AlGaInAs MQW DFB lasers

High quality InGaAsN growth by MOVPE using N/sub 2/ carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors

InGaAsN laser structures and LEDs at 1.3 /spl mu/m grown on GaAs substrate by AP-MOVPE

Low damage dry-etched grating on a MQW active layer and dislocation-free InP regrowth for 1.55 /spl mu/m complex-coupled DFB lasers fabrication

Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror

Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded base

Strong Purcell effect for quantum boxes in micropillars and microdisks

Strong Purcell effect for quantum boxes in micropillars and microdisks

A fast quantum-well semiconductor saturable-absorber mirror with low losses for sub-ps passively mode-locked laser

Luminescence of narrow RIE etched In1-xGaxAs/InP and GaAs/Ga1-ixAlxAs quantum wires

Optical quality improvement of MOVPE grown GaAlAs/GaAs double heterostructures on silicon substrates

LOw threshold 1.5μm SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growth

Photoluminescence probing of InGaAs-InAl(Ga)As multiquantum well structures: a correlation to laser diode thresholds

Carrier lifetime in carbon doped In/sub 0.53/Ga/sub 0.47/As

High static performance GaInAs/GaInAsP SCH MQW 1.5/spl mu/m wavelength buried ridge stripe lasers

Influence of the P type doping of the InP cladding layer on the threshold current density in 1.5/spl mu/m Q.W. lasers

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