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In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

ECS transactions, 2009, Vol.25 (8), p.309-315

2009

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Characterization of High-Rate Deposited Microcrystalline Si Films Prepared using Atmospheric-Pressure Very High-Frequency Plasma

ECS transactions, 2009, Vol.25 (8), p.405-412

2009

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Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates

ECS transactions, 2006, Vol.3 (8), p.215-225

2006

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Crystal growth kinetics on stepped surface by the path probability method

Advances in the Understanding of Crystal Growth Mechanisms, 1997, p.101-113

1997

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Dual mode amplification of dye laser by injection-seeding method

Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557), 2001, Vol.2, p.II-II

2001

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Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications

2021 Device Research Conference (DRC), 2021, p.1-2

2021

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Schottky Barrier Height between Erbium Silicide and Various Morphology of Si(100) Surface Changed by Alkaline Etching

ECS transactions, 2013, Vol.58 (7), p.349-354

2013

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Flattening Technique of (551) Silicon Surface Using Xe/H 2 Plasma

ECS transactions, 2014, Vol.61 (2), p.401-407

2014

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Statistical analysis of Random Telegraph Noise reduction effect by separating channel from the interface

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.3B.5.1-3B.5.7

2012

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High Performance Normally-off GaN MOSFETs on Si Substrates

ECS transactions, 2013, Vol.58 (4), p.155-166

2013

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(Invited) High Power Normally-Off GaN MOSFET

ECS transactions, 2011, Vol.41 (8), p.87-100

2011

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New Metal Organic Gas Supply System by Using an Advanced Flow Control System

ECS transactions, 2012, Vol.45 (3), p.429-435

2012

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Different Properties of Erbium Silicides on Si(100) and Si(551) Orientation Surfaces

ECS transactions, 2011, Vol.41 (7), p.365-373

2011

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Very High Performance CMOS on Si(551) Surface using Radical Oxidation Silicon Flattening Technology and Accumulation-mode SOI Device Structure

ECS transactions, 2009, Vol.25 (7), p.115-129

2009

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Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS

ECS transactions, 2010, Vol.28 (1), p.315-324

2010

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Advanced Direct-Polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects

ECS transactions, 2011, Vol.34 (1), p.653-658

2011

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Tribological and Kinetical Analysis of Barrier Metal Polishing for Next Generation Copper Interconnects

ECS transactions, 2011, Vol.34 (1), p.627-632

2011

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Advanced Method for Measuring Ultra-Low Contact Resistivity Between Silicide and Silicon Based on Cross Bridge Kelvin Resistor

2009 IEEE International Conference on Microelectronic Test Structures, 2009, p.109-113

2009

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Dependence of Thermal Decomposition of Metal Organic Gases on Metal Surface for Gas Distribution System

ECS transactions, 2010, Vol.33 (13), p.121-128

2010

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Statistical evaluation of dynamic junction leakage current fluctuation using a simple arrayed capacitors circuit

2010 IEEE International Reliability Physics Symposium, 2010, p.683-688

2010

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Performance comparison of 2D and 3D FPGAs using true-3D CAD tool

2011 IEEE 54th International Midwest Symposium on Circuits and Systems (MWSCAS), 2011, p.1-4

2011

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An Outgas Free Passivation Technology for Semiconductor Vacuum Chamber using Advanced Anodic Oxidation

ECS transactions, 2007, Vol.2 (9), p.67-71

2007

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Development of an ultra-precision stage control system using nonresonant ultrasonic motor

IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468), 2003, Vol.2, p.1331-1336 Vol.2

2003

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Effect of ultra-thin Ti layer on PtSi work function modulation

ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005, 2005, p.426-429

2005

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Continuous Path Tracking System of High Precision Stage Using Synchronous Piezoelectric Device Driver

Advanced materials research, 2006, Vol.11-12, p.121-124

2006

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In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

Characterization of High-Rate Deposited Microcrystalline Si Films Prepared using Atmospheric-Pressure Very High-Frequency Plasma

Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates

Crystal growth kinetics on stepped surface by the path probability method

Dual mode amplification of dye laser by injection-seeding method

Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications

Schottky Barrier Height between Erbium Silicide and Various Morphology of Si(100) Surface Changed by Alkaline Etching

Flattening Technique of (551) Silicon Surface Using Xe/H 2 Plasma

Statistical analysis of Random Telegraph Noise reduction effect by separating channel from the interface

High Performance Normally-off GaN MOSFETs on Si Substrates

(Invited) High Power Normally-Off GaN MOSFET

New Metal Organic Gas Supply System by Using an Advanced Flow Control System

Different Properties of Erbium Silicides on Si(100) and Si(551) Orientation Surfaces

Very High Performance CMOS on Si(551) Surface using Radical Oxidation Silicon Flattening Technology and Accumulation-mode SOI Device Structure

Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS

Advanced Direct-Polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects

Tribological and Kinetical Analysis of Barrier Metal Polishing for Next Generation Copper Interconnects

Advanced Method for Measuring Ultra-Low Contact Resistivity Between Silicide and Silicon Based on Cross Bridge Kelvin Resistor

Dependence of Thermal Decomposition of Metal Organic Gases on Metal Surface for Gas Distribution System

Statistical evaluation of dynamic junction leakage current fluctuation using a simple arrayed capacitors circuit

Performance comparison of 2D and 3D FPGAs using true-3D CAD tool

An Outgas Free Passivation Technology for Semiconductor Vacuum Chamber using Advanced Anodic Oxidation

Development of an ultra-precision stage control system using nonresonant ultrasonic motor

Effect of ultra-thin Ti layer on PtSi work function modulation

Continuous Path Tracking System of High Precision Stage Using Synchronous Piezoelectric Device Driver

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