UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

CONSTRUCTION METHOD OF “CELL-CUBE” SPATIO-TEMPORAL DATA MODEL FOR BIG DATA

International archives of the photogrammetry, remote sensing and spatial information sciences., 2020, Vol.XLII-3/W10, p.25-30

2020

Volltextzugriff (PDF)

Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.159-162

2021

Volltextzugriff (PDF)

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

Volltextzugriff (PDF)

Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.401-402

2022

Volltextzugriff (PDF)

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric \text}\text}\mathrm for Quantum Computing Applications

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-4

2023

Volltextzugriff (PDF)

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

Volltextzugriff (PDF)

Record Low Contact Resistivity to Ge:B (8.1×1010Ω-cm2) and GeSn:B (4.1×1010Ω-cm2) with Optimized [B] and [Sn] by In-Situ CVD Doping

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

Volltextzugriff (PDF)

Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers

2020 Device Research Conference (DRC), 2020, p.1-2

2020

Volltextzugriff (PDF)

Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

Volltextzugriff (PDF)

Microtesla NMR and High Resolution MR Imaging Using High-Tc SQUIDs

IEEE transactions on applied superconductivity, 2013, Vol.23 (3)

2013

Volltextzugriff (PDF)

Ferroelectric Properties of HZO Orthorhombic (Pca21, Pmn21) Phases under Shear Strain -A Theoretical Study

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), 2024, p.1-2

2024

Volltextzugriff (PDF)

BEOL Layout Optimization to Improve RF Performance of 40nm Node Technology for High-Frequency Applications

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), 2024, p.1-2

2024

Volltextzugriff (PDF)

Enhanced Charge Transfer Efficiency Using Ring Vertical Transfer Gates in Backside Illuminated CMOS Image Sensor

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), 2024, p.1-2

2024

Volltextzugriff (PDF)

The optimal model of misaligned guide vanes for a particular pump–turbine

IOP conference series. Earth and environmental science, 2012, Vol.15 (3), p.32037

2012

Volltextzugriff (PDF)

Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.12.1.1-12.1.4

2016

Volltextzugriff (PDF)

Effects of Deep Trench Isolation Shape and Microlens Radius of Curvature on Optical and Electrical crosstalk in Backside Illuminated CMOS Image Sensors

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023, p.1-2

2023

Volltextzugriff (PDF)

Antireflection of nano-sized SiO sphere arrays on crystalline silicon solar cells

2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2015, p.145-146

2015

Volltextzugriff (PDF)

Advanced germanium channel transistors (invited)

2015 IEEE 11th International Conference on ASIC (ASICON), 2015, p.1-4

2015

Volltextzugriff (PDF)

Electrostatics and ballistic transport studies in junctionless nanowire transistors

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.85-88

2013

Volltextzugriff (PDF)

Nanosheet Extensions and Beyond

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023, p.1-1

2023

Volltextzugriff (PDF)

First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation

2022 International Electron Devices Meeting (IEDM), 2022, p.20.3.1-20.3.4

2022

Volltextzugriff (PDF)

RF Performance Optimization of Stacked Si Nanosheet nFETs

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2022, p.1-2

2022

Volltextzugriff (PDF)

BEOL Design and RF Performance of Stacked Si Nanosheets and Nanowires

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023, p.1-2

2023

Volltextzugriff (PDF)

Highly Stacked 8 \mathbf}\mathbf} Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record \mathbf}/\mathbf} of 1.4x107 and Record \mathbf} of \boldsymbol\boldsymbol\mathbf at \mathbf}=\mathbf}= -0.5V by CVD Epitaxy and Dry Etching

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.26.4.1-26.4.4

2021

Volltextzugriff (PDF)

Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.31.8.1-31.8.4

2018

Volltextzugriff (PDF)

1 – 25 von 805

Suche als RSS-Feed

Aktive Filter

PublikationsformArtikel

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(112)
Mit Volltextzugriff
(643)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(467)
Technology
(445)
Engineering
(318)
Engineering, Electrical & Electronic
(285)
Computer Science
(151)
Physical Sciences
(147)
Physics
(115)
Exact Sciences And Technology
(89)
Applied Sciences
(73)
Computer Science, Theory & Methods
(65)
Materials Science
(65)
Silicon
(62)
Physics, Applied
(61)
Logic Gates
(60)
Voltage
(60)
Optics
(56)
Computer Science, Artificial Intelligence
(55)
Computer Science, Information Systems
(52)
Materials Science, Multidisciplinary
(52)
Telecommunications
(50)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

CONSTRUCTION METHOD OF “CELL-CUBE” SPATIO-TEMPORAL DATA MODEL FOR BIG DATA

Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric \text}\text}\mathrm for Quantum Computing Applications

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

Record Low Contact Resistivity to Ge:B (8.1×1010Ω-cm2) and GeSn:B (4.1×1010Ω-cm2) with Optimized [B] and [Sn] by In-Situ CVD Doping

Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers

Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry

Microtesla NMR and High Resolution MR Imaging Using High-Tc SQUIDs

Ferroelectric Properties of HZO Orthorhombic (Pca21, Pmn21) Phases under Shear Strain -A Theoretical Study

BEOL Layout Optimization to Improve RF Performance of 40nm Node Technology for High-Frequency Applications

Enhanced Charge Transfer Efficiency Using Ring Vertical Transfer Gates in Backside Illuminated CMOS Image Sensor

The optimal model of misaligned guide vanes for a particular pump–turbine

Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

Effects of Deep Trench Isolation Shape and Microlens Radius of Curvature on Optical and Electrical crosstalk in Backside Illuminated CMOS Image Sensors

Antireflection of nano-sized SiO sphere arrays on crystalline silicon solar cells

Advanced germanium channel transistors (invited)

Electrostatics and ballistic transport studies in junctionless nanowire transistors

Nanosheet Extensions and Beyond

First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation

RF Performance Optimization of Stacked Si Nanosheet nFETs

BEOL Design and RF Performance of Stacked Si Nanosheets and Nanowires

Highly Stacked 8 \mathbf}\mathbf} Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record \mathbf}/\mathbf} of 1.4x107 and Record \mathbf} of \boldsymbol\boldsymbol\mathbf at \mathbf}=\mathbf}= -0.5V by CVD Epitaxy and Dry Etching

Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

Aktive Filter

Suchergebnisse filtern