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Self-heating effect in FinFETs and its impact on devices reliability characterization

2014 IEEE International Reliability Physics Symposium, 2014, p.4A.4.1-4A.4.4

2014

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Time-Efficient Characterization of Time-Dependent Gate Oxide Breakdwon Using Tunable Ramp Voltage Stress (TRVS) Method for Automotive Applications

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-6

2021

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Thermal behavior of self-heating effect in FinFET devices acting on back-end interconnects

2015 IEEE International Reliability Physics Symposium, 2015, p.2F.6.1-2F.6.5

2015

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The physical explanation of TDDB power law lifetime model through oxygen vacancy trap investigations in HKMG NMOS FinFET devices

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.3C-4.1-3C-4.6

2017

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Study of dynamic TDDB in scaled FinFET technologies

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.P-GD.5-1-P-GD.5-5

2018

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The physical mechanism investigation between HK/IL gate stack breakdown and time-dependent oxygen vacancy trap generation in FinFET devices

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.7A-1-1-7A-1-6

2016

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SILC degradation model to predict area scaling for gate dielectric breakdown in advanced technologies

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.3C-2.1-3C-2.5

2017

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Study of junction degradation and lifetime assessment in FinFETs

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.2B-1.1-2B-1.5

2017

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AC stress and standard cell aging characterization to enhance reliability coverage of logic circuits

2016 IEEE International Integrated Reliability Workshop (IIRW), 2016, p.6-7

2016

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Time dependent junction degradation in FinFET

2016 IEEE International Integrated Reliability Workshop (IIRW), 2016, p.21-23

2016

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Wafer level test arrays with simple BIST to expedite process development for circuit reliability

2015 IEEE International Integrated Reliability Workshop (IIRW), 2015, p.77-80

2015

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A fast reliability screening technique for identification of trap generation

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.DI-3-1-DI-3-5

2016

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The impact and implication of BTI/HCI decoupling on ring oscillator

2015 IEEE International Reliability Physics Symposium, 2015, p.6A.4.1-6A.4.5

2015

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Investigation of hot-carrier-injection assisted TDDB and multi-stage hot-hole induced leakage current in BCD HV NMOS

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.2D-1.1-2D-1.5

2017

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A novel on-die GHz AC stress test methodology for high speed IO application

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.4C-3.1-4C-3.5

2017

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Study of oxygen vacancy in high-k gate dielectric by charge injection technique

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.4B-3-1-4B-3-5

2016

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Progress on the ARIADNE Axion Experiment

Microwave Cavities and Detectors for Axion Research, p.151-161

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The impact of inverter-like transitions on device TDDB and ring oscillators

2015 IEEE International Reliability Physics Symposium, 2015, p.GD.1.1-GD.1.5

2015

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New TDDB lifetime model for AC inverter-like stress in advance FinFET structure

2015 IEEE International Reliability Physics Symposium, 2015, p.5A.6.1-5A.6.5

2015

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Timing characterizations of device and CPU-like circuit to ensure process reliability

2016 IEEE International Reliability Physics Symposium (IRPS), 2016, p.4C-1-1-4C-1-5

2016

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Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.31.8.1-31.8.4

2018

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An investigation of capacitance aging model for extreme low-k and high-k dielectrics

2015 IEEE International Reliability Physics Symposium, 2015, p.3A.4.1-3A.4.6

2015

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Delay effects and frequency dependence of NBTI with sub-microsecond measurements

2015 IEEE International Reliability Physics Symposium, 2015, p.4A.2.1-4A.2.5

2015

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The physical mechanism investigation of AC TDDB behavior in advanced gate stack

2014 IEEE International Reliability Physics Symposium, 2014, p.5B.5.1-5B.5.5

2014

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Frequency dependence of NBTI in high-k/metal-gate technology

2014 IEEE International Reliability Physics Symposium, 2014, p.XT.3.1-XT.3.5

2014

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Self-heating effect in FinFETs and its impact on devices reliability characterization

Time-Efficient Characterization of Time-Dependent Gate Oxide Breakdwon Using Tunable Ramp Voltage Stress (TRVS) Method for Automotive Applications

Thermal behavior of self-heating effect in FinFET devices acting on back-end interconnects

The physical explanation of TDDB power law lifetime model through oxygen vacancy trap investigations in HKMG NMOS FinFET devices

Study of dynamic TDDB in scaled FinFET technologies

The physical mechanism investigation between HK/IL gate stack breakdown and time-dependent oxygen vacancy trap generation in FinFET devices

SILC degradation model to predict area scaling for gate dielectric breakdown in advanced technologies

Study of junction degradation and lifetime assessment in FinFETs

AC stress and standard cell aging characterization to enhance reliability coverage of logic circuits

Time dependent junction degradation in FinFET

Wafer level test arrays with simple BIST to expedite process development for circuit reliability

A fast reliability screening technique for identification of trap generation

The impact and implication of BTI/HCI decoupling on ring oscillator

Investigation of hot-carrier-injection assisted TDDB and multi-stage hot-hole induced leakage current in BCD HV NMOS

A novel on-die GHz AC stress test methodology for high speed IO application

Study of oxygen vacancy in high-k gate dielectric by charge injection technique

Progress on the ARIADNE Axion Experiment

The impact of inverter-like transitions on device TDDB and ring oscillators

New TDDB lifetime model for AC inverter-like stress in advance FinFET structure

Timing characterizations of device and CPU-like circuit to ensure process reliability

Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

An investigation of capacitance aging model for extreme low-k and high-k dielectrics

Delay effects and frequency dependence of NBTI with sub-microsecond measurements

The physical mechanism investigation of AC TDDB behavior in advanced gate stack

Frequency dependence of NBTI in high-k/metal-gate technology

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