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Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Journal of physics. Conference series, 2017, Vol.917 (5), p.52027

2017

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Improvement of polymorphous/crystalline heterojunction solar cells using low temperature screen-printed pastes

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005, 2005, p.1131-1134

2005

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Probing the electronic properties of CVD graphene superlattices

2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2016, p.1-2

2016

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Transient and modulated photoconductivity in microcrystalline silicon

MRS proceedings, 2004, Vol.808, Article A9.8

2004

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New regime of RF PECVD for the growth of a-Si:H and its alloys with improved electronic properties

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997, 1997, p.655-658

1997

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Bias stress studies of a-SiN:H/a-Si:H MIS structures from quasistatic capacitance measurements

Journal of non-crystalline solids, 1995, Vol.187, p.313-318

1995

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Characterization of amorphous/crystalline silicon interfaces from electrical measurements

MRS proceedings, 2008, Vol.1066, Article 1066-A04-01

2008

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Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.1895-1897

2016

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Polymorphous Silicon: Transport Properties and Solar Cell Applications

MRS proceedings, 1999, Vol.557, Article 501

1999

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Characterization of GaInP/Ge heterostructure solar cells by capacitance measurements at forward bias under illumination

Energy procedia, 2011, Vol.3, p.76-83

2011

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Electronic Properties and Device Applications of Hot-Wire CVD Polycrystalline Silicon Films

MRS proceedings, 1997, Vol.467, Article 271

1997

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Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments

Journal of non-crystalline solids, 2012, Vol.358 (17), p.2007-2010

2012

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Electronic and structural properties of the amorphous/crystalline silicon interface

Thin solid films, 2009, Vol.517 (23), p.6386-6391

2009

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Electric field-controlled sign of the capacitance in metal-carbon nitride-metal devices

Journal of non-crystalline solids, 2008, Vol.354 (19-25), p.2637-2640

2008

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High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions

Journal of non-crystalline solids, 2008, Vol.354 (19-25), p.2641-2645

2008

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New approach to capacitance spectroscopy for interface characterizatio of a-Si:H/c-Si heterojunctions

Journal of non-crystalline solids, 2006, Vol.352 (9-20), p.1213-1216

2006

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Photoconductivity techniques for defect spectroscopy of photovoltaic materials

Thin solid films, 2002, Vol.403-04, p.30-33

2002

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Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates

Thin solid films, 2006, Vol.511-12, p.543-547

2006

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Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

Thin solid films, 2006, Vol.511-12, p.385-389

2006

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Device grade hydrogenated polymorphous silicon deposited at high rates

Journal of non-crystalline solids, 2008, Vol.354 (19-25), p.2092-2095

2008

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Polymorphous silicon thin films deposited at high rate : Transport properties and density of states

Thin solid films, 2008, Vol.516 (20), p.6888-6891

2008

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Investigation of bandgap states using the modulated photocurrent technique in both high and low frequency regimes

Journal of non-crystalline solids, 2004, Vol.338-40, p.390-399

2004

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Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon

Journal of non-crystalline solids, 2002, Vol.299302, p.599-604

2002

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Influence of electron and proton irradiation on the electronic properties of microcrystalline silicon

Journal of non-crystalline solids, 2002, Vol.299302, p.632-636

2002

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Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

Journal of non-crystalline solids, 2004, Vol.338-40, p.477-480

2004

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Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Improvement of polymorphous/crystalline heterojunction solar cells using low temperature screen-printed pastes

Probing the electronic properties of CVD graphene superlattices

Transient and modulated photoconductivity in microcrystalline silicon

New regime of RF PECVD for the growth of a-Si:H and its alloys with improved electronic properties

Bias stress studies of a-SiN:H/a-Si:H MIS structures from quasistatic capacitance measurements

Characterization of amorphous/crystalline silicon interfaces from electrical measurements

Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells

Polymorphous Silicon: Transport Properties and Solar Cell Applications

Characterization of GaInP/Ge heterostructure solar cells by capacitance measurements at forward bias under illumination

Electronic Properties and Device Applications of Hot-Wire CVD Polycrystalline Silicon Films

Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments

Electronic and structural properties of the amorphous/crystalline silicon interface

Electric field-controlled sign of the capacitance in metal-carbon nitride-metal devices

High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions

New approach to capacitance spectroscopy for interface characterizatio of a-Si:H/c-Si heterojunctions

Photoconductivity techniques for defect spectroscopy of photovoltaic materials

Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates

Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

Device grade hydrogenated polymorphous silicon deposited at high rates

Polymorphous silicon thin films deposited at high rate : Transport properties and density of states

Investigation of bandgap states using the modulated photocurrent technique in both high and low frequency regimes

Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon

Influence of electron and proton irradiation on the electronic properties of microcrystalline silicon

Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

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