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Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy

MRS proceedings, 2006, Vol.911, Article 0911-B03-03

2006

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Approaches for Dynamic IR N ano-Optics using 2D Materials

2018 76th Device Research Conference (DRC), 2018, p.1-2

Caldwell, Joshua D.

2018

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Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Materials science forum, 2009, Vol.600-603, p.273-278

2009

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Enhanced Mid -Infrared Reflectance with Graphene Coated Silicon Carbide Nanowires

2020 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2020, p.1-2

2020

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Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC

MRS proceedings, 2008, Vol.1069, Article 1069-D03-03

2008

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Temperature dependence of the resistively detected electron spin resonance signals in a wide parabolic quantum well

Physics of Semiconductors; Part A, 2007, Vol.893, p.633-634

2007

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Designing Plasmonic Hot Carrier Devices for Uncooled Infrared Photodetection

2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID), 2020, p.1-2

2020

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Probing the Influence of Dielectric Environment upon Volume-Confined Hyperbolic Polaritons

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID), 2019, p.1-1

2019

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MD-ENDOR Spectroscopy in a Two-Dimensional Electron System in the Regime of the Quantum Hall Effect

Physics of Semiconductors; Part A, 2005, Vol.772, p.519-520

2005

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(Invited) Mitigating Defects within Silicon Carbide Epitaxy

ECS transactions, 2011, Vol.41 (8), p.261-271

2011

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Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices

Materials science forum, 2009, Vol.600-603, p.1111-1114

2009

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Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Materials science forum, 2012, Vol.717-720, p.1013-1016

2012

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Electrical Characterization of the Graphene-SiC Heterojunction

Materials science forum, 2012, Vol.717-720, p.641-644

2012

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Influence of Intercalated Silicon on the Transport Properties of Graphene

Materials science forum, 2011, Vol.679-680, p.793-796

2011

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Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Materials science forum, 2011, Vol.679-680, p.119-122

2011

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On the Driving Force of Shockley Stacking Fault Motion in 4H-SiC

ECS transactions, 2009, Vol.25 (12), p.93-104

2009

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(Invited) Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

ECS transactions, 2010, Vol.33 (4), p.177-186

2010

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Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes

ECS transactions, 2007, Vol.11 (5), p.239-245

2007

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Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

2007 International Semiconductor Device Research Symposium, 2007, p.1-2

2007

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Surface enhanced Raman scattering enhancements from silver atomic layer deposition coated nanowire

CLEO: 2011 - Laser Science to Photonic Applications, 2011, p.1-2

2011

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Enhanced Light Extraction from Gallium Nitride Optoelectronics on Si Substrates

ECS transactions, 2007, Vol.11 (5), p.9-15

2007

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Chapter 12 Semiconductor Nanophotonics Using Surface Polaritons

Quantum Nano-Photonics, 2018, p.235-254

2018

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Improved GaN Homo-Junction, Ultraviolet, Light-Emitting Diodes Grown on Step-Free 4H-SiC Mesas

ECS transactions, 2006, Vol.3 (5), p.189-198

2006

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Approaches to Reduced-Defect Active Regions for III-N Devices

ECS transactions, 2006, Vol.3 (5), p.117-125

2006

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Investigation of electron -nuclear spin interactions in two-dimensional electron systems via magnetoresistively detected magnetic resonance

Caldwell, Joshua D

2004

Volltextzugriff (PDF)

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Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy

Approaches for Dynamic IR N ano-Optics using 2D Materials

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Enhanced Mid -Infrared Reflectance with Graphene Coated Silicon Carbide Nanowires

Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC

Temperature dependence of the resistively detected electron spin resonance signals in a wide parabolic quantum well

Designing Plasmonic Hot Carrier Devices for Uncooled Infrared Photodetection

Probing the Influence of Dielectric Environment upon Volume-Confined Hyperbolic Polaritons

MD-ENDOR Spectroscopy in a Two-Dimensional Electron System in the Regime of the Quantum Hall Effect

(Invited) Mitigating Defects within Silicon Carbide Epitaxy

Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Electrical Characterization of the Graphene-SiC Heterojunction

Influence of Intercalated Silicon on the Transport Properties of Graphene

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

On the Driving Force of Shockley Stacking Fault Motion in 4H-SiC

(Invited) Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes

Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

Surface enhanced Raman scattering enhancements from silver atomic layer deposition coated nanowire

Enhanced Light Extraction from Gallium Nitride Optoelectronics on Si Substrates

Chapter 12 Semiconductor Nanophotonics Using Surface Polaritons

Improved GaN Homo-Junction, Ultraviolet, Light-Emitting Diodes Grown on Step-Free 4H-SiC Mesas

Approaches to Reduced-Defect Active Regions for III-N Devices

Investigation of electron -nuclear spin interactions in two-dimensional electron systems via magnetoresistively detected magnetic resonance

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