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An SOA-AWG based 80-Gb/s All-optical Wavelength Converter Chip

2006 European Conference on Optical Communications, 2006, p.1-2

2006

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All-Optical Wavelength Converter with a Monolithically Integrated Digitally Tunable Laser

2002 28TH European Conference on Optical Communication, 2002, Vol.5, p.1-2

2002

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IEEE_Xplore

Effect of the first-order mode in access waveguides on the performance of unbalanced MMI couplers

The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003, 2003, Vol.1, p.354-355 vol.1

2003

Link zum Volltext
IEEE_Xplore

High performance buried heterostructure /spl lambda/=1.5 /spl mu/m InGaAs/AlGaInAs strained-layer quantum well laser diodes

Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 1996, p.765-768

1996

Link zum Volltext
IEEE_Xplore

Universality of the chirp-parameter of bulk active electro absorption modulators

24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398), 1998, Vol.1, p.473-474 vol.1

1998

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IEEE_Xplore

An InP-Based 4 × 4-Channel Multi-Wavelength Laser

2002 28TH European Conference on Optical Communication, 2002, Vol.2, p.1-2

2002

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IEEE_Xplore

Packaged PHASAR-based wavelength demultiplexer with integrated detectors

11th International Conference on Integrated Optics and Optical Fibre Communications. 23rd European Conference on Optical Communications IOOC-ECOC97, 1997, p.75-78

1997

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Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.461-464

1992

Link zum Volltext
IEEE_Xplore

Effect of barrier width on the performance of compressively strained InGaAs/InGaAsP MQW lasers

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM), 1994, p.10-13

1994

Link zum Volltext
IEEE_Xplore

Network topologies for SuperPON

Proceedings of Optical Fiber Communication Conference, 1997, p.57-58

1997

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IEEE_Xplore

Optimizing semiconductor optical amplifiers for transmission systems

11th International Conference on Integrated Optics and Optical Fibre Communications. 23rd European Conference on Optical Communications IOOC-ECOC97, 1997, p.90-93

1997

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High power and high temperature operation of 1.5 mu m wavelength strained-layer InGaAs/InGaAsP SIPBH lasers

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991, p.184-187

1991

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IEEE_Xplore

DFB lasers with integrated electroabsorption modulator

Seventh International Conference on Indium Phosphide and Related Materials, 1995, p.709-712

1995

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IEEE_Xplore

Polarisation insensitive 1300 nm laser amplifiers employing both compressively and tensile strained quantum wells in a single active layer

1993 (5th) International Conference on Indium Phosphide and Related Materials, 1993, p.91-94

1993

Link zum Volltext
IEEE_Xplore

10 Gbit/s modules with monolithic electroabsorption modulator and distributed feedback laser

Conference on Lasers and Electro-Optics Europe, 1994, p.304-305

1994

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IEEE_Xplore

Strained-layer InGaAs(P) quantum well semiconductor lasers and semiconductor laser amplifiers

Philips journal of research, 1995, Vol.49 (3), p.187-224

1995

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An SOA-AWG based 80-Gb/s All-optical Wavelength Converter Chip

All-Optical Wavelength Converter with a Monolithically Integrated Digitally Tunable Laser

Effect of the first-order mode in access waveguides on the performance of unbalanced MMI couplers

High performance buried heterostructure /spl lambda/=1.5 /spl mu/m InGaAs/AlGaInAs strained-layer quantum well laser diodes

Universality of the chirp-parameter of bulk active electro absorption modulators

An InP-Based 4 × 4-Channel Multi-Wavelength Laser

Packaged PHASAR-based wavelength demultiplexer with integrated detectors

Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on

Effect of barrier width on the performance of compressively strained InGaAs/InGaAsP MQW lasers

Network topologies for SuperPON

Optimizing semiconductor optical amplifiers for transmission systems

High power and high temperature operation of 1.5 mu m wavelength strained-layer InGaAs/InGaAsP SIPBH lasers

DFB lasers with integrated electroabsorption modulator

Polarisation insensitive 1300 nm laser amplifiers employing both compressively and tensile strained quantum wells in a single active layer

10 Gbit/s modules with monolithic electroabsorption modulator and distributed feedback laser

Strained-layer InGaAs(P) quantum well semiconductor lasers and semiconductor laser amplifiers

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