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Radiation Effects in Advanced and Emerging Nonvolatile Memories

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.546-572

Marinella, Matthew J.

2021

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Challenges and Applications of Emerging Nonvolatile Memory Devices

Electronics (Basel), 2020-06, Vol.9 (6), p.1029

Banerjee, Writam

2020

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SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6637-6643

2021

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In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

IEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4

2017

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IEEE_Xplore

Hybrid Spin-Orbit Torque/Spin-Transfer Torque-Based Multibit Cell for Area-Efficient Magnetic Random Access Memory

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6318-6323

2023

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IEEE_Xplore

Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4903-4909

2021

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IEEE_Xplore

An Effective Selection of Memory Technologies for TCAM to Improve the Search Operations: Demonstration of Memory Efficiency in SDN Recovery

Electronics (Basel), 2024-02, Vol.13 (4), p.707

2024

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BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1042-1047

2023

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IEEE_Xplore

Dynamic Power Reduction in TCAM Using Advanced Selective Pre-Charging of Match Lines

Electronics (Basel), 2023-09, Vol.12 (17), p.3691

2023

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A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1698-1705

2022

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IEEE_Xplore

SRAM Compilation and Placement Co-Optimization for Memory Subsystems

Electronics (Basel), 2023-03, Vol.12 (6), p.1353

Liu, Biwei

2023

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Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1394-1406

2020

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IEEE_Xplore

Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory

Electronics (Basel), 2022-09, Vol.11 (17), p.2738

2022

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A Streaming Data Processing Architecture Based on Lookup Tables

Electronics (Basel), 2023-06, Vol.12 (12), p.2725

2023

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High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2108-2114

2022

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IEEE_Xplore

MeMPA: A Memory Mapped M-SIMD Co-Processor to Cope with the Memory Wall Issue

Electronics (Basel), 2024-03, Vol.13 (5), p.854

2024

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ReRAM: History, Status, and Future

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1420-1433

Chen, Yangyin

2020

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IEEE_Xplore

Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.5004-5011

2016

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IEEE_Xplore

On-Demand Garbage Collection Algorithm with Prioritized Victim Blocks for SSDs

Electronics (Basel), 2023-05, Vol.12 (9), p.2142

2023

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Concept of dynamic memory in economics

Communications in nonlinear science & numerical simulation, 2018-02, Vol.55, p.127-145

2018

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Redundancy and Analog Slicing for Precise In-Memory Machine Learning-Part II: Applications and Benchmark

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4379-4383

2021

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IEEE_Xplore

Low Temperature SoIC Bonding and Stacking Technology for 12-/16-Hi High Bandwidth Memory (HBM)

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5343-5348

2020

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IEEE_Xplore

A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4259-4264

2022

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IEEE_Xplore

Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4659-4666

2018

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IEEE_Xplore

Parallelism-Aware Channel Partition for Read/Write Interference Mitigation in Solid-State Drives

Electronics (Basel), 2022-12, Vol.11 (23), p.4048

2022

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Radiation Effects in Advanced and Emerging Nonvolatile Memories

Challenges and Applications of Emerging Nonvolatile Memory Devices

SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge

In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

Hybrid Spin-Orbit Torque/Spin-Transfer Torque-Based Multibit Cell for Area-Efficient Magnetic Random Access Memory

Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)

An Effective Selection of Memory Technologies for TCAM to Improve the Search Operations: Demonstration of Memory Efficiency in SDN Recovery

BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

Dynamic Power Reduction in TCAM Using Advanced Selective Pre-Charging of Match Lines

A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

SRAM Compilation and Placement Co-Optimization for Memory Subsystems

Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond

Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory

A Streaming Data Processing Architecture Based on Lookup Tables

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays

MeMPA: A Memory Mapped M-SIMD Co-Processor to Cope with the Memory Wall Issue

ReRAM: History, Status, and Future

Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses

On-Demand Garbage Collection Algorithm with Prioritized Victim Blocks for SSDs

Concept of dynamic memory in economics

Redundancy and Analog Slicing for Precise In-Memory Machine Learning-Part II: Applications and Benchmark

Low Temperature SoIC Bonding and Stacking Technology for 12-/16-Hi High Bandwidth Memory (HBM)

A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation

Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing

Parallelism-Aware Channel Partition for Read/Write Interference Mitigation in Solid-State Drives

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