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Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium

Applied physics letters, 2017-11, Vol.111 (19)

2017

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Ballistic One-Dimensional Holes with Strong g‑Factor Anisotropy in Germanium

Nano letters, 2018-08, Vol.18 (8), p.4861-4865

2018

Volltextzugriff (PDF)

Two-dimensional localization in GeSn

Journal of physics. Condensed matter, 2022-11, Vol.34 (48), p.485301

2022

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Self-organised fractional quantisation in a hole quantum wire

Journal of physics. Condensed matter, 2018-03, Vol.30 (9), p.9-09LT01

2018

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Weak localization and weak antilocalization in doped germanium epilayers

Applied physics letters, 2017-02, Vol.110 (6)

2017

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Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks

Optics express, 2017-10, Vol.25 (21), p.25374-25385

2017

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Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers

Physical review letters, 2015-05, Vol.114 (19), p.196602-196602, Article 196602

2015

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Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells

New journal of physics, 2016-11, Vol.18 (11), p.113036

2016

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Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Applied physics letters, 2016-09, Vol.109 (10)

2016

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Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

Journal of applied physics, 2010-03, Vol.107 (6), p.064304-064304-11

2010

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Modelling the inhomogeneous SiC Schottky interface

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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Hole weak anti-localization in a strained-Ge surface quantum well

Applied physics letters, 2017-08, Vol.111 (6)

2017

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Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes

Journal of microelectromechanical systems, 2020-06, Vol.29 (3), p.370-377

2020

Volltextzugriff (PDF)

Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields

Physical review. B, Condensed matter and materials physics, 2015-05, Vol.91 (20), Article 201301

2015

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Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)

Thin solid films, 2011-09, Vol.519 (22), p.7911-7917

2011

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High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

Solid-state electronics, 2011-08, Vol.62 (1), p.189-194

2011

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Weak antilocalization of high mobility holes in a strained Germanium quantum well heterostructure

Journal of physics. Condensed matter, 2015-01, Vol.27 (2), p.022201-022201

2015

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Quantum ballistic transport in strained epitaxial germanium

Applied physics letters, 2017-12, Vol.111 (23)

2017

Volltextzugriff (PDF)

Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm

Optics express, 2014-08, Vol.22 (16), p.19284-19292

2014

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Evidence of strong spin–orbit interaction in strained epitaxial germanium

Thin solid films, 2016-03, Vol.602, p.84-89

2016

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High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Journal of applied physics, 2013-10, Vol.114 (15)

2013

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Spin-splitting in p-type Ge devices

Journal of applied physics, 2016-08, Vol.120 (8)

2016

Volltextzugriff (PDF)

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Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium

Ballistic One-Dimensional Holes with Strong g‑Factor Anisotropy in Germanium

Two-dimensional localization in GeSn

Self-organised fractional quantisation in a hole quantum wire

Weak localization and weak antilocalization in doped germanium epilayers

Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks

Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells

Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

Modelling the inhomogeneous SiC Schottky interface

Hole weak anti-localization in a strained-Ge surface quantum well

Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes

Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields

Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

Weak antilocalization of high mobility holes in a strained Germanium quantum well heterostructure

Quantum ballistic transport in strained epitaxial germanium

Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm

Evidence of strong spin–orbit interaction in strained epitaxial germanium

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

Spin-splitting in p-type Ge devices

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