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Engineering Dandelion-Like Hollow TS-1@SiO.sub.2: Structural Design and Oxidation Application

Catalysis letters, 2023-03, Vol.153 (3), p.770

2023

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Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd[sub.3]P[sub.2] Quantum Dots

Materials, 2023-09, Vol.16 (19)

2023

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Molecular Beam Epitaxy of Twin-Free Bi[sub.2]Se[sub.3] and Sb[sub.2]Te[sub.3] on In[sub.2]Se[sub.3]/InPB Virtual Substrates

Crystals (Basel), 2023-04, Vol.13 (4)

2023

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Band Diagram of the InAs.sub.1 - .sub.ySb.sub.y/InAsSbP Heterojunction in the Composition Range y 0.2

Physics of the solid state, 2021-04, Vol.63 (4), p.595

2021

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Electrical and Recombination Properties of Polar Orthorhombic κ-Ga[sub.2]O[sub.3] Films Prepared by Halide Vapor Phase Epitaxy

Nanomaterials (Basel, Switzerland), 2023-03, Vol.13 (7)

2023

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InAs.sub. Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4-6 m

Physics of the solid state, 2019-10, Vol.61 (10), p.1699

2019

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InAs.sub

Physics of the solid state, 2019-10, Vol.61 (10), p.1699

2019

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Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO.sub.2 film

Journal of materials science, 2016-09, Vol.51 (17), p.8233

2016

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Control of octahedral rotations via octahedral connectivity in an epitaxially strained [1 u.c.//4 u.c.] LaNiO.sub.3/LaGaO.sub.3 superlattice

Journal of materials science, 2016-09, p.8168

2016

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Growth of Thin Epitaxial NiO Films on LiNbO.sub.3 Substrates

Journal of communications technology & electronics, 2020-12, Vol.65 (12), p.1422

Luzanov, V. A

2020

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Semiconducting Sn-doped β-Ga.sub.2O.sub.3 homoepitaxial layers grown by metal organic vapour-phase epitaxy

Journal of materials science, 2016-04, Vol.51 (7), p.3650

2016

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Selective UV Photodetectors Based n the Metal--AlGaN Schottky Barrier

Journal of communications technology & electronics, 2017-09, Vol.62 (9), p.1074

2017

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Phase transitions and metastable states in stressed SrTi[O.sub.3] films

Physics of the solid state, 2016-02

Lebedev, A.I

2016

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Study of MAX phase based Schottky interfacial structure: the case of electron-beam deposited epitaxial Cr.sub.2AlC film on p-Si

Journal of materials science, 2023-03, Vol.58 (9), p.4041

2023

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Micro/Nanomechanical Characterization of ScAlMgO[sub.4] Single Crystal by Instrumented Indentation and Scratch Methods

Materials, 2024-08, Vol.17 (15)

2024

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Magnetic Phase Diagram of van der Waals Antiferromagnet TbTe[sub.3]

Materials, 2022-12, Vol.15 (24)

2022

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Radiation Damage Accumulation in [alpha]-Ga.sub.2O.sub.3 under P and PF.sub.4 Ion Bombardment

Semiconductors (Woodbury, N.Y.), 2023-10, Vol.57 (10), p.459

2023

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MoS.sub.2 nanosheets vertically grown on RGO by a liquid phase epitaxial method and its visible light photocatalytic properties

Journal of materials science, 2020-06, Vol.55 (16), p.6915

2020

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Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb.sub.1-xSn.sub.xTe with x [greater than or equal to] 0.4

Semiconductors (Woodbury, N.Y.), 2023-05, Vol.57 (5), p.235

2023

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Erratum: “Understanding chemical and physical mechanisms in atomic layer deposition” [J. Chem. Phys. 152, 040902 (2020)]

The Journal of chemical physics, 2024-02, Vol.160 (8)

2024

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Investigation and Comparison of the Performance for β-Ga[sub.2]O[sub.3] Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate

Crystals (Basel), 2024-07, Vol.14 (7)

2024

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Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling

Applied materials today, 2021-03, Vol.22, p.100975, Article 100975

2021

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Erratum to: "spin transport in Epitaxial magnetic Manganite/Ruthenate heterostructures with an LaMn[O.sub.3] layer" [JETP 119 ]

Journal of experimental and theoretical physics, 2015-01, Vol.120 (1), p.169

2015

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MBE grown Ga2O3 and its power device applications

Journal of crystal growth, 2013-09, Vol.378, p.591-595

2013

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Admittance in MIS structures based on graded-gap MBE p-[Hg.sub.1-x][Cd.sub.x]Te in the strong inversion mode

Russian physics journal, 2014-12, Vol.57 (8), p.1070

2014

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Engineering Dandelion-Like Hollow TS-1@SiO.sub.2: Structural Design and Oxidation Application

Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd[sub.3]P[sub.2] Quantum Dots

Molecular Beam Epitaxy of Twin-Free Bi[sub.2]Se[sub.3] and Sb[sub.2]Te[sub.3] on In[sub.2]Se[sub.3]/InPB Virtual Substrates

Band Diagram of the InAs.sub.1 - .sub.ySb.sub.y/InAsSbP Heterojunction in the Composition Range y 0.2

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga[sub.2]O[sub.3] Films Prepared by Halide Vapor Phase Epitaxy

InAs.sub. Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4-6 m

InAs.sub

Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO.sub.2 film

Control of octahedral rotations via octahedral connectivity in an epitaxially strained [1 u.c.//4 u.c.] LaNiO.sub.3/LaGaO.sub.3 superlattice

Growth of Thin Epitaxial NiO Films on LiNbO.sub.3 Substrates

Semiconducting Sn-doped β-Ga.sub.2O.sub.3 homoepitaxial layers grown by metal organic vapour-phase epitaxy

Selective UV Photodetectors Based n the Metal--AlGaN Schottky Barrier

Phase transitions and metastable states in stressed SrTi[O.sub.3] films

Study of MAX phase based Schottky interfacial structure: the case of electron-beam deposited epitaxial Cr.sub.2AlC film on p-Si

Micro/Nanomechanical Characterization of ScAlMgO[sub.4] Single Crystal by Instrumented Indentation and Scratch Methods

Magnetic Phase Diagram of van der Waals Antiferromagnet TbTe[sub.3]

Radiation Damage Accumulation in [alpha]-Ga.sub.2O.sub.3 under P and PF.sub.4 Ion Bombardment

MoS.sub.2 nanosheets vertically grown on RGO by a liquid phase epitaxial method and its visible light photocatalytic properties

Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb.sub.1-xSn.sub.xTe with x [greater than or equal to] 0.4

Erratum: “Understanding chemical and physical mechanisms in atomic layer deposition” [J. Chem. Phys. 152, 040902 (2020)]

Investigation and Comparison of the Performance for β-Ga[sub.2]O[sub.3] Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate

Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling

Erratum to: "spin transport in Epitaxial magnetic Manganite/Ruthenate heterostructures with an LaMn[O.sub.3] layer" [JETP 119 ]

MBE grown Ga2O3 and its power device applications

Admittance in MIS structures based on graded-gap MBE p-[Hg.sub.1-x][Cd.sub.x]Te in the strong inversion mode

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