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Strip Thermoelectric Generator Made of Carbon Fiber

Semiconductors (Woodbury, N.Y.), 2023-09, Vol.57 (9), p.398-400

2023

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Calcium Fluoride Films with 2–10 nm Thickness on Silicon-(111): Growth, Diagnostics, Study of the through Current Transport

Semiconductors (Woodbury, N.Y.), 2023-04, Vol.57 (4), p.211-215

2023

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Resistance and thermoelectric power of carbon fibers upon changing the conductivity type

Semiconductors (Woodbury, N.Y.), 2017-07, Vol.51 (7), p.834-835

2017

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Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm

Semiconductors (Woodbury, N.Y.), 2021-07, Vol.55 (7), p.601-607

2021

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Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

Semiconductors (Woodbury, N.Y.), 2019-01, Vol.53 (1), p.99-105

2019

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GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

Semiconductors (Woodbury, N.Y.), 2018-09, Vol.52 (9), p.1215-1220

2018

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Strong Coupling of Excitons in Hexagonal GaN Microcavities

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.127-130

2020

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Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW

Semiconductors (Woodbury, N.Y.), 2018-08, Vol.52 (8), p.1037-1042

2018

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Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.667-670

2018

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Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (15), p.1947-1952

2018

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Experimental and theoretical study of the thermoelectric properties of copper selenide

Semiconductors (Woodbury, N.Y.), 2017-07, Vol.51 (7), p.854-857

2017

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Hall Resistivity Correlations in Disordered Electron-Doped Nd2-xCexCuO4+δ Films

Journal of low temperature physics, 2017-06, Vol.187 (5-6), p.734-741

2017

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Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation

Semiconductors (Woodbury, N.Y.), 2016-03, Vol.50 (3), p.326-333

2016

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Experimental study of frequency multipliers based on a GaAs/AlAs semiconductor superlattices in the terahertz frequency range

Semiconductors (Woodbury, N.Y.), 2012-01, Vol.46 (1), p.121-125

2012

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Influence of the magnetic field on the stability of the multiferroic conical spin arrangement of Mn0.80Co0.20WO4

Physical review. B, 2018-10, Vol.98 (13), p.134430

2018

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Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

Semiconductors (Woodbury, N.Y.), 2016-05, Vol.50 (5), p.662-666

2016

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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Semiconductors (Woodbury, N.Y.), 2015-06, Vol.49 (6), p.827-835

2015

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Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.247-253, Article 247

2015

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Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

Semiconductors (Woodbury, N.Y.), 2016-07, Vol.50 (7), p.915-919

2016

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Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

Semiconductors (Woodbury, N.Y.), 2012-04, Vol.46 (4), p.456-465

2012

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An Improved ZnMoO4 Scintillating Bolometer for the Search for Neutrinoless Double Beta Decay of 100Mo

Journal of low temperature physics, 2012-06, Vol.167 (5-6), p.1021-1028

2012

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Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

Semiconductors (Woodbury, N.Y.), 2015-03, Vol.49 (3), p.331-336

2015

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Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7), p.872-879

2011

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Structural and optical properties of thin In2O3 films produced by autowave oxidation

Semiconductors (Woodbury, N.Y.), 2013-04, Vol.47 (4), p.569-573

2013

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Structural features of the photogeneration mechanism of free charge carriers in element-containing polydisalicylidene azomethine series

Semiconductors (Woodbury, N.Y.), 2010-05, Vol.44 (5), p.634-641

2010

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Strip Thermoelectric Generator Made of Carbon Fiber

Calcium Fluoride Films with 2–10 nm Thickness on Silicon-(111): Growth, Diagnostics, Study of the through Current Transport

Resistance and thermoelectric power of carbon fibers upon changing the conductivity type

Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm

Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

Strong Coupling of Excitons in Hexagonal GaN Microcavities

Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW

Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE

Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers

Experimental and theoretical study of the thermoelectric properties of copper selenide

Hall Resistivity Correlations in Disordered Electron-Doped Nd2-xCexCuO4+δ Films

Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation

Experimental study of frequency multipliers based on a GaAs/AlAs semiconductor superlattices in the terahertz frequency range

Influence of the magnetic field on the stability of the multiferroic conical spin arrangement of Mn0.80Co0.20WO4

Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

An Improved ZnMoO4 Scintillating Bolometer for the Search for Neutrinoless Double Beta Decay of 100Mo

Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy

Structural and optical properties of thin In2O3 films produced by autowave oxidation

Structural features of the photogeneration mechanism of free charge carriers in element-containing polydisalicylidene azomethine series

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