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Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

AIP advances, 2017-07, Vol.7 (7), p.075117-075117-10

2017

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Extension of REBMIX algorithm to von Mises parametric family for modeling joint distribution of wind speed and direction

Engineering structures, 2019-03, Vol.183, p.1134-1145

2019

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Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP

Applied physics letters, 2016-01, Vol.108 (3)

2016

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Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells

Applied physics letters, 2015-11, Vol.107 (21)

2015

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Statistical analysis and probabilistic modeling of WIM monitoring data of an instrumented arch bridge

Smart structures and systems, 2016-06, Vol.17 (6), p.1087-1105

2016

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Analysis of non-stationary wind characteristics at an arch bridge using structural health monitoring data

Journal of civil structural health monitoring, 2017-09, Vol.7 (4), p.573-587

2017

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Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission

Applied physics letters, 2016-09, Vol.109 (12)

2016

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Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors

Journal of crystal growth, 2015-09, Vol.425, p.346-350

2015

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Dark current characteristics of GaAs-based 2.6 µ m InGaAs photodetectors on different types of InAlAs buffer layers

Journal of physics. D, Applied physics, 2014-02, Vol.47 (8), p.85107

2014

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Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 mu m

Journal of crystal growth, 2015-09, Vol.425, p.376-380

2015

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InGaAsP/InP photodetectors targeting on 1.06μm wavelength detection

Infrared physics & technology, 2016-03, Vol.75, p.65-69

2016

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Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides

Journal of crystal growth, 2017-11, Vol.477, p.253-257

2017

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Characteristics of InGaAsBi with various lattice mismatches on InP substrate

AIP advances, 2016-07, Vol.6 (7)

2016

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Stochastic characterization of wind field characteristics of an arch bridge instrumented with structural health monitoring system

Structural safety, 2018-03, Vol.71, p.47-56

2018

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InP-based type-I quantum well lasers up to 2.9 μ m at 230 K in pulsed mode on a metamorphic buffer

Applied physics letters, 2015-03, Vol.106 (12)

2015

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Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors

Journal of crystal growth, 2016-04, Vol.440, p.1-5

2016

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Effects of continuously graded or step-graded InxAl1−xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors

Journal of crystal growth, 2015-09, Vol.425, p.337-340

2015

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Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors

Journal of crystal growth, 2017-11, Vol.477, p.82-85

2017

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Effects of material parameters on the temperature dependent spectral response of In0.83Ga0.17As photodetectors

Journal of alloys and compounds, 2015-01, Vol.619, p.52-57

2015

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Effects of continuously graded or step-graded In sub(x)Al sub(1-x)As buffer on the performance of InP-based In sub(0.83)Ga sub(0.17)As photodetectors

Journal of crystal growth, 2015-09, Vol.425, p.337-340

2015

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2.25- \mu m Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP

IEEE photonics technology letters, 2017-01, Vol.29 (1), p.55-58

2017

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Effects of material parameters on the temperature dependent spectral response of In sub(0.83)Ga sub(0.17)As photodetectors

Journal of alloys and compounds, 2015-01, Vol.619, p.52-57

2015

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Dark current characteristics of GaAs-based 2.6 [mu]m InGaAs photodetectors on different types of InAIAs buffer layers

Journal of physics. D, Applied physics, 2014-02, Vol.47 (8), p.1-4

2014

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Dark current characteristics of GaAs-based 2.6 µm InGaAs photodetectors on different types of InAlAs buffer layers

Journal of physics. D, Applied physics, 2014-02, Vol.47 (8)

2014

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Stochastic characterization of wind field characteristics of an arch bridge instrumented with structural health monitoring system

Structural safety, 2017-01, Vol.71, p.47

2017

Volltextzugriff (PDF)

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Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Extension of REBMIX algorithm to von Mises parametric family for modeling joint distribution of wind speed and direction

Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP

Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells

Statistical analysis and probabilistic modeling of WIM monitoring data of an instrumented arch bridge

Analysis of non-stationary wind characteristics at an arch bridge using structural health monitoring data

Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission

Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors

Dark current characteristics of GaAs-based 2.6 µ m InGaAs photodetectors on different types of InAlAs buffer layers

Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 mu m

InGaAsP/InP photodetectors targeting on 1.06μm wavelength detection

Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides

Characteristics of InGaAsBi with various lattice mismatches on InP substrate

Stochastic characterization of wind field characteristics of an arch bridge instrumented with structural health monitoring system

InP-based type-I quantum well lasers up to 2.9 μ m at 230 K in pulsed mode on a metamorphic buffer

Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors

Effects of continuously graded or step-graded InxAl1−xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors

Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors

Effects of material parameters on the temperature dependent spectral response of In0.83Ga0.17As photodetectors

Effects of continuously graded or step-graded In sub(x)Al sub(1-x)As buffer on the performance of InP-based In sub(0.83)Ga sub(0.17)As photodetectors

2.25- \mu m Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP

Effects of material parameters on the temperature dependent spectral response of In sub(0.83)Ga sub(0.17)As photodetectors

Dark current characteristics of GaAs-based 2.6 [mu]m InGaAs photodetectors on different types of InAIAs buffer layers

Dark current characteristics of GaAs-based 2.6 µm InGaAs photodetectors on different types of InAlAs buffer layers

Stochastic characterization of wind field characteristics of an arch bridge instrumented with structural health monitoring system

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