UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC

Journal of applied physics, 2018-09, Vol.124 (12)

2018

Volltextzugriff (PDF)

Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

Journal of applied physics, 2017-07, Vol.122 (4)

2017

Volltextzugriff (PDF)

Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing

Journal of applied physics, 2018-07, Vol.124 (2)

2018

Volltextzugriff (PDF)

Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

Journal of crystal growth, 2017-06, Vol.468, p.889-893

2017

Volltextzugriff (PDF)

Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching

Journal of crystal growth, 2007-08, Vol.306 (2), p.254-261

2007

Volltextzugriff (PDF)

Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

Journal of crystal growth, 2008-02, Vol.310 (4), p.757-765

2008

Volltextzugriff (PDF)

Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

Applied physics letters, 2005-05, Vol.86 (20)

2005

Volltextzugriff (PDF)

X-ray microbeam three-dimensional topography for dislocation strain-field analysis of 4H-SiC

Journal of applied physics, 2013-07, Vol.114 (2)

2013

Volltextzugriff (PDF)

Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

Journal of crystal growth, 2009-02, Vol.311 (5), p.1416-1422

2009

Volltextzugriff (PDF)

Lymphangiogenesis in myocardial remodelling after infarction

Histopathology, 2007-09, Vol.51 (3), p.345-353

2007

Volltextzugriff (PDF)

Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers

Materials science forum, 2004-06, Vol.457-460, p.565-568

2004

Volltextzugriff (PDF)

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

Materials science forum, 2009, Vol.600-603, p.305-308

2009

Volltextzugriff (PDF)

A new algorithm for N-dimensional Hilbert scanning

IEEE transactions on image processing, 1999-07, Vol.8 (7), p.964-973

1999

Volltextzugriff (PDF)

Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Journal of crystal growth, 2002-04, Vol.237, p.1206-1212

2002

Volltextzugriff (PDF)

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Materials science forum, 2010-04, Vol.645-648, p.77-82

2010

Volltextzugriff (PDF)

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer

Materials science forum, 2009-03, Vol.615-617, p.67-72

2009

Volltextzugriff (PDF)

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

Materials science forum, 2009-01, Vol.600-603, p.267-272

2009

Volltextzugriff (PDF)

Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers

Journal of applied crystallography, 2005-06, Vol.38 (3), p.442-447

2005

Volltextzugriff (PDF)

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Materials science forum, 2007-09, Vol.556-557, p.271-274

2007

Volltextzugriff (PDF)

High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Journal of materials research, 2007-04, Vol.22 (4), p.845-849

2007

Volltextzugriff (PDF)

Image processing: dealing with texture

Second edition., 2021

Volltextzugriff (PDF)

KAMISHIBAI KEYGRAPH: TOOL FOR VISUALIZING STRUCTURAL TRANSITIONS FOR DETECTING TRANSIENT CAUSES

New mathematics and natural computation, 2010-07, Vol.6 (2), p.177-191

2010

Volltextzugriff (PDF)

Infrared attenuated total reflection spectroscopy of 6H–SiC(0001) and (0001̄) surfaces

Journal of applied physics, 1999-04, Vol.85 (7), p.3569-3575

1999

Volltextzugriff (PDF)

Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC

Materials science forum, 2006-10, Vol.527-529, p.489-492

2006

Volltextzugriff (PDF)

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Materials science forum, 2006-10, Vol.527-529, p.415-418

2006

Volltextzugriff (PDF)

1 – 25 von 10.606

Suche als RSS-Feed

Aktive Filter

SpracheRussisch

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(7.047)
Mit Volltextzugriff
(8.315)

Publikationsform

6 weitere anzeigen...

Weniger anzeigen...

Sprache

4 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

EZB Electronic Journals Library
(4.207)
IngentaConnect Journals
(3.207)
MEDLINE
(2.936)
Journals@Ovid Complete
(1.657)
Elsevier ScienceDirect Journals Complete
(1.628)
NUS Single-Journal Subscriptions
(1.451)
Wiley Online Library Journals Frontfile Complete
(1.227)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(1.210)
IngentaConnect Journals
(912)
Wiley Online Library Full Collection 2018
(796)
Springer journals
(770)
IEEE Xplore
(569)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(496)
Oxford journals
(338)
Taylor & Francis Journals Complete
(265)
Taylor & Francis Journals
(253)
Taylor & Francis
(227)
Nature Journals
(159)
Oxford Journals 2020 Medicine
(128)
Ebook Central Perpetual and DDA
(105)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC

Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing

Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching

Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

X-ray microbeam three-dimensional topography for dislocation strain-field analysis of 4H-SiC

Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

Lymphangiogenesis in myocardial remodelling after infarction

Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

A new algorithm for N-dimensional Hilbert scanning

Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Image processing: dealing with texture

KAMISHIBAI KEYGRAPH: TOOL FOR VISUALIZING STRUCTURAL TRANSITIONS FOR DETECTING TRANSIENT CAUSES

Infrared attenuated total reflection spectroscopy of 6H–SiC(0001) and (0001̄) surfaces

Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Aktive Filter

Suchergebnisse filtern