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“Barrierless” Misfit Dislocation Nucleation in SiGe/Si Strained Layer Epitaxy

MRS proceedings, 1992, Vol.263, Article 391

1992

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Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

MRS proceedings, 1992, Vol.263

1992

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Partial Dislocations and Critical Thicknesses for Strained Layer Relaxation

MRS proceedings, 1992, Vol.263, Article 421

1992

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Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

MRS proceedings, 1992, Vol.263, Article 35

1992

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Observation of the Ordered CoPt3 Alloy in Co-Pt Multilayers

MRS proceedings, 1992, Vol.263

1992

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The Effect of The Initial Nucleation Temperature on The Misfit Dislocation Structure of InP-on-GaAs Heterostructures

MRS proceedings, 1992, Vol.263, Article 461

1992

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X-Ray Diffraction Determination of Critical Thickness of InAs and InP on GaAs Grown by Atomic Layer Molecular Beam Epitaxy

MRS proceedings, 1992, Vol.263, Article 473

1992

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The Effect of Substrate Surface Orientation and Epilayer Thickness on Ingaas/Gaas Epilayer Tilt and Tilt Direction

MRS proceedings, 1992, Vol.263, Article 457

1992

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Properties and Strain Relaxation below Room Temperature of Epitaxial Pbse and Pb(Se,Te) on Fluoride-Covered Silicon Substrates

MRS proceedings, 1992, Vol.263, Article 415

1992

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Transmission Electron Microscopy Study of Epitaxial Co/Au and Co/Pd (111) Multilayers

MRS proceedings, 1992, Vol.263, Article 119

1992

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Control of threading dislocations in lattice-mismatched heteroepitaxy

MRS proceedings, 1992, Vol.263, Article 485

1992

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Strain Relaxation Via Interface Nucleation of Misfit Dislocations in Intermixing Layers

MRS proceedings, 1992, Vol.263, Article 479

1992

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Dependence on MOCVD Growth Temperature of The Photoluminescence Properties of ZnSe, ZnTe, and ZnSe(1-x)Te(x) Alloys and ZnSe/ZnTe Superlattices

MRS proceedings, 1992, Vol.263, Article 371

1992

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Sticking and Desorption Coefficients of As4 and As2 During Group V and Group III Controlled MBE Growth

MRS proceedings, 1992, Vol.263

Fernandez, Rouel

1992

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Allotaxy: A New Method for Epitaxial Growth of Compound Thin Films

MRS proceedings, 1992, Vol.263, Article 221

1992

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Initial Stages of Growth of Epitaxial InAs Films on InP Substrate

MRS proceedings, 1992, Vol.263, Article 79

1992

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VLPCVD Heteroepitaxial Growth of Very Thin GE-Layers on Si-Substrates

MRS proceedings, 1992, Vol.263, Article 85

1992

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Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy

MRS proceedings, 1992, Vol.263, Article 267

1992

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Low-Defect-Density Ge on Si for Large-Lattice-Mismatched Semiconductor Integration and Strain-Engineered Devices

MRS proceedings, 1992, Vol.263, Article 491

1992

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Initial Stage of Solid Phase Epitaxial Growth of GaAs Films on Vicinal Si (001) Substrate

MRS proceedings, 1992, Vol.263, Article 131

1992

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Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask

MRS proceedings, 1992, Vol.263, Article 359

1992

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A New Method of Identifying the Interfacial Structure in the Type-B CoSi2//Si(111) Bicrystal

MRS proceedings, 1992, Vol.263

1992

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Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates

MRS proceedings, 1992, Vol.263

1992

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Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si Epilayers

MRS proceedings, 1992, Vol.263, Article 503

1992

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Initial Stage of InGaAs Growth on GaAs(100)

MRS proceedings, 1992, Vol.263, Article 409

1992

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“Barrierless” Misfit Dislocation Nucleation in SiGe/Si Strained Layer Epitaxy

Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

Partial Dislocations and Critical Thicknesses for Strained Layer Relaxation

Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

Observation of the Ordered CoPt3 Alloy in Co-Pt Multilayers

The Effect of The Initial Nucleation Temperature on The Misfit Dislocation Structure of InP-on-GaAs Heterostructures

X-Ray Diffraction Determination of Critical Thickness of InAs and InP on GaAs Grown by Atomic Layer Molecular Beam Epitaxy

The Effect of Substrate Surface Orientation and Epilayer Thickness on Ingaas/Gaas Epilayer Tilt and Tilt Direction

Properties and Strain Relaxation below Room Temperature of Epitaxial Pbse and Pb(Se,Te) on Fluoride-Covered Silicon Substrates

Transmission Electron Microscopy Study of Epitaxial Co/Au and Co/Pd (111) Multilayers

Control of threading dislocations in lattice-mismatched heteroepitaxy

Strain Relaxation Via Interface Nucleation of Misfit Dislocations in Intermixing Layers

Dependence on MOCVD Growth Temperature of The Photoluminescence Properties of ZnSe, ZnTe, and ZnSe(1-x)Te(x) Alloys and ZnSe/ZnTe Superlattices

Sticking and Desorption Coefficients of As4 and As2 During Group V and Group III Controlled MBE Growth

Allotaxy: A New Method for Epitaxial Growth of Compound Thin Films

Initial Stages of Growth of Epitaxial InAs Films on InP Substrate

VLPCVD Heteroepitaxial Growth of Very Thin GE-Layers on Si-Substrates

Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy

Low-Defect-Density Ge on Si for Large-Lattice-Mismatched Semiconductor Integration and Strain-Engineered Devices

Initial Stage of Solid Phase Epitaxial Growth of GaAs Films on Vicinal Si (001) Substrate

Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask

A New Method of Identifying the Interfacial Structure in the Type-B CoSi2//Si(111) Bicrystal

Strain Relief in SrF2 Epitaxial Films on Si(111) Substrates

Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si Epilayers

Initial Stage of InGaAs Growth on GaAs(100)

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