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0.00016 deg/√hr Angle Random Walk (ARW) and 0.0014 deg/hr Bias Instability (BI) from a 5.2M-Q and 1-cm Precision Shell Integrating (PSI) Gyroscope

2020 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL), 2020, p.1-4

2020

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A 0.007-mm2 108- /^ 1-MHz Relaxation Oscillator for High-Temperature Applications up to 180 ^ in 0.13- \mu CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2013-07, Vol.60 (7), p.1692-1701

2013

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A 0.018 %/V Line Sensitivity Voltage Reference With −82.46 dB PSRR at 100 Hz for Bio-Potential Signals Readout Systems

IEEE transactions on circuits and systems. II, Express briefs, 2022-04, Vol.69 (4), p.2031-2035

2022

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A 0.048ns/°C delay generator with variation self-calibration structure(VSCS) for HVICs

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2016, p.480-483

2016

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0.1/spl mu/m poly-Si thin film transistors for system-on-panel (SoP) applications

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.911-914

2005

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0.15 μm passivated InP-based HEMT MMIC technology with high thermal stability in hydrogen ambient

IEEE electron device letters, 2000-03, Vol.21 (3), p.97-99

2000

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A 0.18 /spl mu/m CMOS low-noise elliptic low-pass continuous-time filter

2005 IEEE International Symposium on Circuits and Systems (ISCAS), 2005, p.800-803 Vol. 1

2005

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0.25 \mu\hbox Self-Aligned AlGaN/GaN High Electron Mobility Transistors

IEEE electron device letters, 2008-01, Vol.29 (1), p.18-20

2008

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0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

2015 10th European Microwave Integrated Circuits Conference (EuMIC), 2015, p.140-143

2015

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0.25pA/Bit Ultra-Low-Leakage 6T Single-Port SRAM on 22nm Bulk Process for IoT Applications

2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, p.1-5

2020

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0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

IEEE transactions on microwave theory and techniques, 2018-11, Vol.66 (11), p.4860-4869

2018

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A ±0.3 ppm Oven-Controlled MEMS Oscillator Using Structural Resistance-Based Temperature Sensing

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2018-08, Vol.65 (8), p.1492-1499

2018

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0–3 type Bi3TaTiO9:40wt%BiFeO3 composite with improved high-temperature piezoelectric properties

Journal of alloys and compounds, 2018-04, Vol.740, p.1-6

2018

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0.34- THz High-Temperature Superconducting Josephson-Junction Mixer with Superior Noise and Conversion Performance

2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2018, p.1-1

2018

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TA 0.34Deg/Hour Bulk Acoustic Wave Gyroscope in 4H Silicon-Carbide with an Elevated-Temperature Enhanced Q-Factor of 4.6 Million

2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS), 2024, p.7-10

2024

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0.36BiScO 3 -0.64PbTiO 3 /Epoxy 1-3-2 High-Temperature Composite Ultrasonic Transducer for Non-destructive Testing Applications

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2024-04, Vol.PP

2024

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0.36BiScO^sub 3^-0.64PbTiO^sub 3^ piezoelectric ceramics for high temperature ultrasonic transducer applications

Journal of alloys and compounds, 2018-04, Vol.743, p.365

2018

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0.36BiScO3-0.64PbTiO3/Epoxy 1-3-2 High- Temperature Composite Ultrasonic Transducer for Nondestructive Testing Applications

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2024-06, Vol.71 (6), p.638-647

2024

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0.36BiScO3-0.64PbTiO3 piezoelectric ceramics for high temperature ultrasonic transducer applications

Journal of alloys and compounds, 2018-04, Vol.743, p.365-371

2018

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0.4 mW, 0.27 pJ/bit true random number generator using jitter, metastability and current starved topology

IET circuits, devices & systems, 2020-10, Vol.14 (7), p.1001-1011

2020

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A 0.4-V Wide Temperature Range All-MOSFET Subthreshold Voltage Reference With 0.027%/V Line Sensitivity

IEEE transactions on circuits and systems. II, Express briefs, 2018-08, Vol.65 (8), p.969-973

2018

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0.43 THz emission from high- T c superconducting emitters optimized at 77 K

Journal of physics. Condensed matter, 2016-01, Vol.28 (2), p.25701

2016

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0.43 THz emission from high-Tc superconducting emitters optimized at 77 K

Journal of physics. Condensed matter, 2015-12, Vol.28 (2)

2015

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A ±0.48°C (3σ) Inaccuracy BJT-Based Temperature Sensor With 241 μs Conversion Time for Display Driver IC in 40 nm CMOS

IEEE access, 2023, Vol.11, p.132843-132851

2023

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0.5 Million-Year Pollen Records from Southern Europe

PAGES news, 1999-12, Vol.7 (3), p.14-15

1999

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0.00016 deg/√hr Angle Random Walk (ARW) and 0.0014 deg/hr Bias Instability (BI) from a 5.2M-Q and 1-cm Precision Shell Integrating (PSI) Gyroscope

A 0.007-mm2 108- /^ 1-MHz Relaxation Oscillator for High-Temperature Applications up to 180 ^ in 0.13- \mu CMOS

A 0.018 %/V Line Sensitivity Voltage Reference With −82.46 dB PSRR at 100 Hz for Bio-Potential Signals Readout Systems

A 0.048ns/°C delay generator with variation self-calibration structure(VSCS) for HVICs

0.1/spl mu/m poly-Si thin film transistors for system-on-panel (SoP) applications

0.15 μm passivated InP-based HEMT MMIC technology with high thermal stability in hydrogen ambient

A 0.18 /spl mu/m CMOS low-noise elliptic low-pass continuous-time filter

0.25 \mu\hbox Self-Aligned AlGaN/GaN High Electron Mobility Transistors

0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range

0.25pA/Bit Ultra-Low-Leakage 6T Single-Port SRAM on 22nm Bulk Process for IoT Applications

0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

A ±0.3 ppm Oven-Controlled MEMS Oscillator Using Structural Resistance-Based Temperature Sensing

0–3 type Bi3TaTiO9:40wt%BiFeO3 composite with improved high-temperature piezoelectric properties

0.34- THz High-Temperature Superconducting Josephson-Junction Mixer with Superior Noise and Conversion Performance

TA 0.34Deg/Hour Bulk Acoustic Wave Gyroscope in 4H Silicon-Carbide with an Elevated-Temperature Enhanced Q-Factor of 4.6 Million

0.36BiScO 3 -0.64PbTiO 3 /Epoxy 1-3-2 High-Temperature Composite Ultrasonic Transducer for Non-destructive Testing Applications

0.36BiScO^sub 3^-0.64PbTiO^sub 3^ piezoelectric ceramics for high temperature ultrasonic transducer applications

0.36BiScO3-0.64PbTiO3/Epoxy 1-3-2 High- Temperature Composite Ultrasonic Transducer for Nondestructive Testing Applications

0.36BiScO3-0.64PbTiO3 piezoelectric ceramics for high temperature ultrasonic transducer applications

0.4 mW, 0.27 pJ/bit true random number generator using jitter, metastability and current starved topology

A 0.4-V Wide Temperature Range All-MOSFET Subthreshold Voltage Reference With 0.027%/V Line Sensitivity

0.43 THz emission from high- T c superconducting emitters optimized at 77 K

0.43 THz emission from high-Tc superconducting emitters optimized at 77 K

A ±0.48°C (3σ) Inaccuracy BJT-Based Temperature Sensor With 241 μs Conversion Time for Display Driver IC in 40 nm CMOS

0.5 Million-Year Pollen Records from Southern Europe

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