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Methodology for parameters extraction with undoped junctionless EZ-FETs

Solid-state electronics, 2024-07, Vol.217, p.108897, Article 108897

2024

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A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.4042-4045

2022

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Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-5

2023

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Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

International journal of RF and microwave computer-aided engineering, 2021-12, Vol.31 (12), p.n/a

2021

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Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5944-5947

2022

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Charge Collection in SOI Microdosimeters and their Radiation Hardness

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

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Giving an account of oneself

Butler, Judith

2005

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Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2861-2866

2021

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Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI

IEEE transactions on microwave theory and techniques, 2020-01, Vol.68 (1), p.132-143

2020

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28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

IEEE microwave and wireless components letters, 2018-05, Vol.28 (5), p.446-448

2018

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A 1.7-dB Minimum NF, 22-32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS

IEEE journal of solid-state circuits, 2020-05, Vol.55 (5), p.1239-1248

2020

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A Compact Low-Power 28-nm FD-SOI CMOS 76-81 GHz Dual-Path Receiver With Phase Control for Automotive Applications

IEEE transactions on microwave theory and techniques, 2024-07, Vol.72 (7), p.4092-4102

2024

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A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

IEEE transactions on antennas and propagation, 2020-06, Vol.68 (6), p.4450-4458

2020

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Compact and Slow-Wave Tunable 28 nm CMOS-SOI Twisted Hybrid Couplers for 5G Applications

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2486-2497

2024

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A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.956-961

2022

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A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation

IEEE transactions on microwave theory and techniques, 2019-01, Vol.67 (1), p.318-331

2019

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A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

IEEE transactions on microwave theory and techniques, 2021-06, Vol.69 (6), p.2795-2808

2021

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High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.659-673

2017

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A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology

IEEE electron device letters, 2024-04, Vol.45 (4), p.558-561

2024

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Reclaim Autonomy: Selbstermächtigung in der digitalen Weltordnung

Augstein, Jakob

1, 2017

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Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

IEEE transactions on circuits and systems. I, Regular papers, 2017-04, Vol.64 (4), p.847-857

2017

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Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Nature communications, 2022-01, Vol.13 (1), p.206-206, Article 206

2022

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A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

IEEE electron device letters, 2024-01, Vol.45 (1), p.1-1

2024

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Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2614-2620

2020

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A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

IEEE journal of solid-state circuits, 2020-05, Vol.55 (5), p.1411-1421

2020

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1 – 25 von 3.713

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Methodology for parameters extraction with undoped junctionless EZ-FETs

A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area

Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

Charge Collection in SOI Microdosimeters and their Radiation Hardness

Giving an account of oneself

Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI

28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

A 1.7-dB Minimum NF, 22-32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS

A Compact Low-Power 28-nm FD-SOI CMOS 76-81 GHz Dual-Path Receiver With Phase Control for Automotive Applications

A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

Compact and Slow-Wave Tunable 28 nm CMOS-SOI Twisted Hybrid Couplers for 5G Applications

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation

A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology

Reclaim Autonomy: Selbstermächtigung in der digitalen Weltordnung

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

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