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Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

IEEE electron device letters, 2020-01, Vol.41 (1), p.8-11

2020

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Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

IEEE electron device letters, 2022-08, Vol.43 (8), p.1183-1186

2022

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Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Low Write-Energy Magnetic Tunnel Junctions for High-Speed Spin-Transfer-Torque MRAM

IEEE electron device letters, 2011-01, Vol.32 (1), p.57-59

2011

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Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

IEEE electron device letters, 2021-10, Vol.42 (10), p.1464-1467

2021

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Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

IEEE electron device letters, 2017-09, Vol.38 (9), p.1339-1342

2017

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Investigation on the Effects of Assembly Gaps in the Resonant Cavity of Klystrons

IEEE electron device letters, 2024-10, Vol.45 (10), p.1985-1988

2024

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Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O

IEEE electron device letters, 2022-09, Vol.43 (9), p.1559-1562

2022

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Ultralow Specific On-Resistance Superjunction Vertical DMOS With High- K Dielectric Pillar

IEEE electron device letters, 2012-07, Vol.33 (7), p.1042-1044

2012

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Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal-Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma

IEEE electron device letters, 2015-11, Vol.36 (11), p.1163-1165

2015

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Finite-Size Effects on Thermionic Emission in Metal-Graphene-Nanoribbon Contacts

IEEE electron device letters, 2010-05, Vol.31 (5), p.491-493

2010

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A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

IEEE electron device letters, 2011-03, Vol.32 (3), p.396-398

2011

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A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode

IEEE electron device letters, 2012-04, Vol.33 (4), p.585-587

2012

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Room Temperature Fabrication of MIMCAPs via Aerosol Deposition

IEEE electron device letters, 2016-02, Vol.37 (2), p.220-223

2016

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Positive Bias-Induced V Instability in Graphene Field Effect Transistors

IEEE electron device letters, 2012-03, Vol.33 (3), p.339-341

2012

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Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices

IEEE electron device letters, 2007, Vol.28 (1), p.14-16

2007

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Bilayer-Based Antiferroelectric HfZrO 2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

IEEE electron device letters, 2021-10, Vol.42 (10), p.1464-1467

2021

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Nonvolatile Resistance Effect Modulated by Pulse With Laser Observed in Nano-Carbon Film

IEEE electron device letters, 2017-05, Vol.38 (5), p.560-563

2017

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Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

IEEE electron device letters, 2003-04, Vol.24 (4), p.230-232

2003

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Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal–Organic Chemical Vapor Deposition Grown In 2 O 3 Channel Treated by Oxygen Microwave Plasma

IEEE electron device letters, 2015-11, Vol.36 (11), p.1163-1165

2015

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Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal-Organic Chemical Vapor Deposition Grown In sub(2)O sub(3) Channel Treated by Oxygen Microwave Plasma

IEEE electron device letters, 2015-11, Vol.36 (11), p.1163-1165

2015

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Ni-Containing Electrodes for Compact Integration of Resistive Random Access Memory With CMOS

IEEE electron device letters, 2013-04, Vol.34 (4), p.508-510

2013

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Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations

IEEE electron device letters, 2008-05, Vol.29 (5), p.445-448

2008

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Temperature Instability of Resistive Switching on \hbox-Based RRAM Devices

IEEE electron device letters, 2010-05, Vol.31 (5), p.476-478

2010

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Waveguided Ge/Si Avalanche Photodiode With Separate Vertical SEG-Ge Absorption, Lateral Si Charge, and Multiplication Configuration

IEEE electron device letters, 2009-09, Vol.30 (9), p.934-936

2009

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Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture

Low Write-Energy Magnetic Tunnel Junctions for High-Speed Spin-Transfer-Torque MRAM

Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

Investigation on the Effects of Assembly Gaps in the Resonant Cavity of Klystrons

Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O

Ultralow Specific On-Resistance Superjunction Vertical DMOS With High- K Dielectric Pillar

Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal-Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma

Finite-Size Effects on Thermionic Emission in Metal-Graphene-Nanoribbon Contacts

A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode

Room Temperature Fabrication of MIMCAPs via Aerosol Deposition

Positive Bias-Induced V Instability in Graphene Field Effect Transistors

Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices

Bilayer-Based Antiferroelectric HfZrO 2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

Nonvolatile Resistance Effect Modulated by Pulse With Laser Observed in Nano-Carbon Film

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal–Organic Chemical Vapor Deposition Grown In 2 O 3 Channel Treated by Oxygen Microwave Plasma

Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal-Organic Chemical Vapor Deposition Grown In sub(2)O sub(3) Channel Treated by Oxygen Microwave Plasma

Ni-Containing Electrodes for Compact Integration of Resistive Random Access Memory With CMOS

Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations

Temperature Instability of Resistive Switching on \hbox-Based RRAM Devices

Waveguided Ge/Si Avalanche Photodiode With Separate Vertical SEG-Ge Absorption, Lateral Si Charge, and Multiplication Configuration

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