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Scalable 3-D Fin-Like Poly-Si TFT and Its Nonvolatile Memory Application

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.578-584

2008

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Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature

Scientific reports, 2017-10, Vol.7 (1), p.14146-8, Article 14146

2017

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Quantitative analysis of nano-defects in thin film encapsulation layer by Cu electrodeposition

Applied surface science, 2018-09, Vol.453, p.31-36

2018

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Advanced poly-Si TFT with fin-like channels by ELA

IEEE electron device letters, 2006-05, Vol.27 (5), p.357-359

2006

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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Advanced materials (Weinheim), 2008-03, Vol.20 (5), p.924-928

2008

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2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

2007 IEEE International Electron Devices Meeting, 2007, p.771-774

2007

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Bi-layered metal-oxide thin films processed at low-temperature for the encapsulation of highly stable organic photo-diode

Organic electronics, 2017-02, Vol.41, p.259-265

2017

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Ultra Low Sheet Resistance on Poly Silicon Film by Excimer Laser Activation

Journal of the Korean Physical Society, 2006, 48(I), , pp.47-50

2006

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33.2: Investigation of the Fin-Like TFT Structure in LTPS Devices

SID International Symposium Digest of technical papers, 2005-05, Vol.36 (1), p.1258-1261

2005

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Tensile-Strained Single-Crystal Si Film on Insulator by Epitaxially Seeded and Laser-Induced Lateral Crystallization

Japanese Journal of Applied Physics, 2006-10, Vol.45 (10R), p.7682

2006

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Excimer Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature

IEICE transactions on electronics, 2006-10, Vol.E89-C (10), p.1460-1464

2006

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Study of HfO2 High-k Gate Oxide for Low-Temperature Poly-Si TFT

Journal of the Korean Physical Society, 2006, 48(I), , pp.32-34

2006

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The Preparation of a Fatigue-Free Bi 4 Ti 3 O 12 Thin Film With Controlling Bi-Excess Using Sol-Gel Coating

Integrated ferroelectrics, 2004-01, Vol.65 (1), p.183-192

2004

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Investigation of the Defect Size and Density in Thin SiON Filmfor Organic Device Encapsulation

International Symposium on Microelectronics, 2016-10, Vol.2016 (1), p.272-276

2016

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The Preparation of a Fatigue-Free Bi4Ti3O12 Thin Film With Controlling Bi-Excess Using Sol-Gel Coating

Integrated ferroelectrics, 2004-01, Vol.65 (1), p.183-192

2004

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Low temperature Si-Si, SiO2-SiO2 covalent bonding structures with thin siloxane layer

International Symposium on Microelectronics, 2013-01, Vol.2013 (1), p.424-428

2013

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Formation of Single-Crystal Silicon Layers on Insulator Islands Using Selective Epitaxial Growth and Laser Crystallization

Meeting abstracts (Electrochemical Society), 2006-02, Vol.MA2005-01 (12), p.559-559

2006

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Method of LTPS TFT with fin-like structure and its channel self-selective enhanced crystallization

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, 2004, Vol.3, p.1991-1994 vol.3

2004

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Scalable 3-D Fin-Like Poly-Si TFT and Its Nonvolatile Memory Application

Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature

Quantitative analysis of nano-defects in thin film encapsulation layer by Cu electrodeposition

Advanced poly-Si TFT with fin-like channels by ELA

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

Bi-layered metal-oxide thin films processed at low-temperature for the encapsulation of highly stable organic photo-diode

Ultra Low Sheet Resistance on Poly Silicon Film by Excimer Laser Activation

33.2: Investigation of the Fin-Like TFT Structure in LTPS Devices

Tensile-Strained Single-Crystal Si Film on Insulator by Epitaxially Seeded and Laser-Induced Lateral Crystallization

Excimer Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature

Study of HfO2 High-k Gate Oxide for Low-Temperature Poly-Si TFT

The Preparation of a Fatigue-Free Bi 4 Ti 3 O 12 Thin Film With Controlling Bi-Excess Using Sol-Gel Coating

Investigation of the Defect Size and Density in Thin SiON Filmfor Organic Device Encapsulation

The Preparation of a Fatigue-Free Bi4Ti3O12 Thin Film With Controlling Bi-Excess Using Sol-Gel Coating

Low temperature Si-Si, SiO2-SiO2 covalent bonding structures with thin siloxane layer

Formation of Single-Crystal Silicon Layers on Insulator Islands Using Selective Epitaxial Growth and Laser Crystallization

Method of LTPS TFT with fin-like structure and its channel self-selective enhanced crystallization

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