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Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO

Nature materials, 2013-03, Vol.12 (3), p.240-245

2013

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Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10), p.100202-100202-3

2012

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Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory

Journal of applied physics, 2010-05, Vol.107 (10), p.103912-103912-9

2010

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Thickness dependence of current-induced domain wall motion in a Co/Ni multi-layer with out-of-plane anisotropy

Applied physics letters, 2013-04, Vol.102 (15)

2013

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Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

Journal of applied physics, 2006-04, Vol.99 (8)

2006

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Large thermal stability independent of critical current of domain wall motion in Co/Ni nanowires with step pinning sites

Journal of applied physics, 2010-12, Vol.108 (11), p.113914-113914-4

2010

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Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers

Applied physics letters, 2006-08, Vol.89 (6), p.061909-061909-3

2006

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Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10R), p.100202

2012

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Wire Width Dependence of Threshold Current Density for Domain Wall Motion in Co/Ni Nanowires

IEEE transactions on magnetics, 2011-10, Vol.47 (10), p.3089-3091

2011

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Toggle magnetic random access memory cells scalable to a capacity of over 100 megabits

Journal of applied physics, 2008-01, Vol.103 (1)

2008

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Operating principle of a three-terminal domain wall device with perpendicularly magnetized Ta/CoFeB/MgO free layer and underlying hard magnets

Japanese Journal of Applied Physics, 2014-06, Vol.53 (6), p.63002-1-063002-7

2014

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MRAM Cell Technology for Over 500-MHz SoC

IEEE journal of solid-state circuits, 2007-04, Vol.42 (4), p.830-838

2007

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Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs

IEEE transactions on magnetics, 2008-11, Vol.44 (11), p.2539-2542

2008

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Toggle magnetic random access memory cells scalable to a capacityof over 100 megabits

Journal of applied physics, 2008-01, Vol.103 (1), p.013902-013902-8

2008

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Evaluation of Scalability for Current-Driven Domain Wall Motion in a Co/Ni Multilayer Strip for Memory Applications

IEEE transactions on magnetics, 2009-10, Vol.45 (10), p.3776-3779

2009

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Analysis of MTJ Edge Deformation Influence on Switching Current Distribution for Next-Generation High-Speed MRAMs

IEEE transactions on magnetics, 2009-10, Vol.45 (10), p.3804-3807

2009

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Current-Driven Domain Wall Motion, Nucleation, and Propagation in a Co/Pt Multi-Layer Strip with a Stepped Structure

IEEE transactions on magnetics, 2008-11, Vol.44 (11), p.2535-2538

2008

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Reduction of Writing Field Distribution in a Magnetic Random Access Memory With Toggle Switching

IEEE transactions on magnetics, 2007-08, Vol.43 (8), p.3512-3516

2007

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A 16-Mb Toggle MRAM With Burst Modes

IEEE journal of solid-state circuits, 2007-11, Vol.42 (11), p.2378-2385

2007

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Magnetic Properties and Writing Characteristics of Magnetic Clad Lines in Magnetoresistive Random Access Memory Devices

Japanese Journal of Applied Physics, 2008-05, Vol.47 (5R), p.3456

2008

Volltextzugriff (PDF)

Enhancement of writing margin for low switching toggle magneticrandom access memories using multilayer synthetic antiferromagnetic structures

Journal of applied physics, 2006-04, Vol.99 (8), p.08N905-08N905-3

2006

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A 16-Mb toggle MRAM with burst modes : The 2006 asian solid-state circuits conference (A-SSCC'06)

IEEE journal of solid-state circuits, 2007, Vol.42 (11), p.2378-2385

2007

Volltextzugriff (PDF)

Reproduced Waveform Symmetry for MR Heads with Non-Coupled GMR Element

Journal of the Magnetics Society of Japan, 1994, Vol.18(S_1_PMRC_94_1), pp.S1_417-420

1994

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Preparation of NiAl sub(2)O sub(4) Spinel by Corrosion Synthesis

Journal of the Japan Society of Powder and Powder Metallurgy, 2013-10, Vol.60 (7), p.319-324

2013

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Preparation of NiAl2O4 Spinel by Corrosion Synthesis

Journal of the Japan Society of Powder and Powder Metallurgy, 2013/07/15, Vol.60(7), pp.319-324

2013

Volltextzugriff (PDF)

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Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO

Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory

Thickness dependence of current-induced domain wall motion in a Co/Ni multi-layer with out-of-plane anisotropy

Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

Large thermal stability independent of critical current of domain wall motion in Co/Ni nanowires with step pinning sites

Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers

Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Wire Width Dependence of Threshold Current Density for Domain Wall Motion in Co/Ni Nanowires

Toggle magnetic random access memory cells scalable to a capacity of over 100 megabits

Operating principle of a three-terminal domain wall device with perpendicularly magnetized Ta/CoFeB/MgO free layer and underlying hard magnets

MRAM Cell Technology for Over 500-MHz SoC

Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs

Toggle magnetic random access memory cells scalable to a capacityof over 100 megabits

Evaluation of Scalability for Current-Driven Domain Wall Motion in a Co/Ni Multilayer Strip for Memory Applications

Analysis of MTJ Edge Deformation Influence on Switching Current Distribution for Next-Generation High-Speed MRAMs

Current-Driven Domain Wall Motion, Nucleation, and Propagation in a Co/Pt Multi-Layer Strip with a Stepped Structure

Reduction of Writing Field Distribution in a Magnetic Random Access Memory With Toggle Switching

A 16-Mb Toggle MRAM With Burst Modes

Magnetic Properties and Writing Characteristics of Magnetic Clad Lines in Magnetoresistive Random Access Memory Devices

Enhancement of writing margin for low switching toggle magneticrandom access memories using multilayer synthetic antiferromagnetic structures

A 16-Mb toggle MRAM with burst modes : The 2006 asian solid-state circuits conference (A-SSCC'06)

Reproduced Waveform Symmetry for MR Heads with Non-Coupled GMR Element

Preparation of NiAl sub(2)O sub(4) Spinel by Corrosion Synthesis

Preparation of NiAl2O4 Spinel by Corrosion Synthesis

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