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Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Applied physics letters, 2001-11, Vol.79 (20), p.3344-3346

2001

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied physics letters, 2006-03, Vol.88 (13)

2006

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Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene

Applied physics letters, 2011-05, Vol.98 (22)

2011

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High quality Ge on Si by epitaxial necking

Applied physics letters, 2000-06, Vol.76 (25), p.3700-3702

2000

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Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

Applied physics letters, 2002-03, Vol.80 (11), p.2014-2016

2002

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Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Applied physics letters, 2001-12, Vol.79 (25), p.4246-4248

2001

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Strain relaxation in patterned strained silicon directly on insulator structures

Applied physics letters, 2005-12, Vol.87 (25), p.251926-251926-3

2005

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Uniform delivery of silicon nanoparticles on device quality substrates using spin coating from isopropyl alcohol colloids

Applied physics letters, 2009-01, Vol.94 (4), p.043112-043112-3

2009

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Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

Applied physics letters, 2002-11, Vol.81 (19), p.3639-3641

2002

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Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Applied physics letters, 2003-08, Vol.83 (5), p.875-877

2003

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One dimensional subbands and mobility modulation in GaAs/AlGaAs quantum wires

Applied physics letters, 1989-03, Vol.54 (12), p.1130-1132

1989

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Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

Applied physics letters, 2012-11, Vol.101 (22)

2012

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Negative transconductance and negative differential resistance in a grid-gate modulation-doped field-effect transistor

Applied physics letters, 1989-01, Vol.54 (5), p.460-462

1989

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Lateral resonant tunneling in a double-barrier field-effect transistor

Applied physics letters, 1989-08, Vol.55 (6), p.589-591

1989

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Surface-superlattice effects in a grating-gate GaAs/GaAlAs modulation doped field-effect transistor

Applied physics letters, 1988-03, Vol.52 (13), p.1071-1073

1988

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Magneto-optical absorption in a two-dimensional electron grid

Applied physics letters, 1992-03, Vol.60 (12), p.1510-1512

1992

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Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

Applied physics letters, 2007-05, Vol.90 (21)

2007

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Effect of thermal processing on mobility in strained Si/strained Si1−yGey on relaxed Si1−xGex (x<y) virtual substrates

Applied physics letters, 2004-04, Vol.84 (17), p.3319-3321

2004

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Suppression of oxidation in nickel germanosilicides by Pt incorporation

Applied physics letters, 2005-10, Vol.87 (18), p.182116-182116-3

2005

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Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1 nm silicon nanoparticles

Applied physics letters, 2007-04, Vol.90 (15), p.153105-153105-3

2007

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Magneto-optics of a quasi-zero-dimensional electron gas

Applied physics letters, 1989-07, Vol.55 (2), p.168-170

1989

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Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

Applied physics letters, 2003-09, Vol.83 (10), p.2058-2060

2003

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Kinetics of self-interstitials generated at the Si/SiO2 interface

Applied physics letters, 1983-06, Vol.42 (11), p.961-963

1983

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Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

Applied physics letters, 2003-10, Vol.83 (17), p.3558-3560

2003

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Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors

Applied physics letters, 2010-02, Vol.96 (6), p.063109-063109-3

2010

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Strained Ge channel p -type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene

High quality Ge on Si by epitaxial necking

Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Strain relaxation in patterned strained silicon directly on insulator structures

Uniform delivery of silicon nanoparticles on device quality substrates using spin coating from isopropyl alcohol colloids

Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

One dimensional subbands and mobility modulation in GaAs/AlGaAs quantum wires

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

Negative transconductance and negative differential resistance in a grid-gate modulation-doped field-effect transistor

Lateral resonant tunneling in a double-barrier field-effect transistor

Surface-superlattice effects in a grating-gate GaAs/GaAlAs modulation doped field-effect transistor

Magneto-optical absorption in a two-dimensional electron grid

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

Effect of thermal processing on mobility in strained Si/strained Si1−yGey on relaxed Si1−xGex (x<y) virtual substrates

Suppression of oxidation in nickel germanosilicides by Pt incorporation

Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1 nm silicon nanoparticles

Magneto-optics of a quasi-zero-dimensional electron gas

Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

Kinetics of self-interstitials generated at the Si/SiO2 interface

Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure

Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors

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