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On the Dipole–Dipole Interaction of Atoms in the Layers Adsorbed on Three- and Two-Dimensional Semiconductors

Physics of the solid state, 2020-08, Vol.62 (8), p.1469-1472

2020

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Exactly Solvable Model Problem on a Graphene Nanoribbon with Zigzag Edges

Semiconductors (Woodbury, N.Y.), 2020-02, Vol.54 (2), p.222-227

2020

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2D SiC/Si Structure: Electron States and Adsorbability

Semiconductors (Woodbury, N.Y.), 2020-07, Vol.54 (7), p.774-781

2020

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Cobalt Intercalation of Graphene on Silicon Carbide

Physics of the solid state, 2019-07, Vol.61 (7), p.1316-1326

2019

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Application of Newton’s method to solve optimization geodetic tasks

E3S Web of Conferences, 2021, Vol.266, p.3001

2021

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Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1409-1413

2019

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Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes

Technical physics, 2020-02, Vol.65 (2), p.250-253

2020

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Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

Carbon (New York), 2020-12, Vol.170, p.666-676

2020

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Atmospheric response to the observed increase of solar UV radiation from solar minimum to solar maximum simulated by the University of Illinois at Urbana-Champaign climate-chemistry model

Journal of Geophysical Research - Atmospheres, 2004-01, Vol.109 (D1), p.D01110-n/a

2004

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Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

Semiconductor science and technology, 2019-04, Vol.34 (4), p.45004

2019

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The study of the dynamic model of the distribution of labor resources by region in conflict interaction

Journal of physics. Conference series, 2021-11, Vol.2052 (1), p.12052

2021

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Model Estimates of the Quantum Capacitance of Graphene-Like Nanostructures

Technical physics letters, 2020-12, Vol.46 (12), p.1174-1176

2020

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3C-SiC growth by sublimation in vacuum technology optimization

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12070

2020

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Application of an evolutionary algorithm to a software suite for determining degrees of tilt in cylindrical structures based on terrestrial laser scanning data

IOP conference series. Materials Science and Engineering, 2019-12, Vol.698 (4), p.44013

2019

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Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs

Radiation physics and chemistry (Oxford, England : 1993), 2020-12, Vol.177, p.109200, Article 109200

2020

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Model Estimates of the Quantum Capacitance of Graphene Nanostructures

Technical physics letters, 2020-08, Vol.46 (8), p.733-736

2020

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Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

Radiation physics and chemistry (Oxford, England : 1993), 2021-08, Vol.185, p.109514, Article 109514

2021

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Dynamic programming method in the tasks of optimal labor capital distribution programs

IOP conference series. Earth and environmental science, 2020-01, Vol.421 (3), p.32024

2020

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Climate/chemistry effects of the Pinatubo volcanic eruption simulated by the UIUC stratosphere/troposphere GCM with interactive photochemistry

Journal of Geophysical Research - Atmospheres, 2002-11, Vol.107 (D21), p.ACL 12-1-ACL 12-14

2002

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Coulomb Electron Interaction between an Adsorbate and Substrate: a Model of a Surface Dimer

Technical physics letters, 2019-09, Vol.45 (9), p.924-926

2019

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Raman and AFM studies of epitaxial graphene intended for manufacturing of transistors

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12018

2020

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Proton irradiation effects on GaN-based epitaxial structures

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12073

2020

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Raman Studies of Graphene Films Grown on 4H-SiC Subjected to Deposition of Ni

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (12), p.1674-1677

2020

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Investigation of the distribution of water clusters in vegetables, fruits, and natural waters by flicker noise spectroscopy

Biofizika, 2007-07, Vol.52 (4), p.585

2007

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Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1904-1909, Article 1904

2019

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On the Dipole–Dipole Interaction of Atoms in the Layers Adsorbed on Three- and Two-Dimensional Semiconductors

Exactly Solvable Model Problem on a Graphene Nanoribbon with Zigzag Edges

2D SiC/Si Structure: Electron States and Adsorbability

Cobalt Intercalation of Graphene on Silicon Carbide

Application of Newton’s method to solve optimization geodetic tasks

Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes

Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes

Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations

Atmospheric response to the observed increase of solar UV radiation from solar minimum to solar maximum simulated by the University of Illinois at Urbana-Champaign climate-chemistry model

Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

The study of the dynamic model of the distribution of labor resources by region in conflict interaction

Model Estimates of the Quantum Capacitance of Graphene-Like Nanostructures

3C-SiC growth by sublimation in vacuum technology optimization

Application of an evolutionary algorithm to a software suite for determining degrees of tilt in cylindrical structures based on terrestrial laser scanning data

Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs

Model Estimates of the Quantum Capacitance of Graphene Nanostructures

Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

Dynamic programming method in the tasks of optimal labor capital distribution programs

Climate/chemistry effects of the Pinatubo volcanic eruption simulated by the UIUC stratosphere/troposphere GCM with interactive photochemistry

Coulomb Electron Interaction between an Adsorbate and Substrate: a Model of a Surface Dimer

Raman and AFM studies of epitaxial graphene intended for manufacturing of transistors

Proton irradiation effects on GaN-based epitaxial structures

Raman Studies of Graphene Films Grown on 4H-SiC Subjected to Deposition of Ni

Investigation of the distribution of water clusters in vegetables, fruits, and natural waters by flicker noise spectroscopy

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

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