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Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

physica status solidi (b), 2020-06, Vol.257 (6), p.n/a

2020

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Impact of the crystallinity of mesoporous polymeric graphitic carbon nitride on the photocatalytic performance under UV and visible light

Microporous and mesoporous materials, 2017-12, Vol.254, p.136-145

2017

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Spontaneous and stimulated emission dynamics of PbS quantum dots in a glass matrix

Physical review. B, Condensed matter and materials physics, 2013-05, Vol.87 (19), Article 195314

2013

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Kinetics of catastrophic optical damage in GaN-based diode lasers

Semiconductor science and technology, 2015-07, Vol.30 (7), p.72001

2015

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Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression through Sn-Poor Composition

The journal of physical chemistry letters, 2019-12, Vol.10 (24), p.7929-7936

2019

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Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

AIP advances, 2020-05, Vol.10 (5), p.055311-055311-6

2020

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In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

Applied physics letters, 2020-09, Vol.117 (12)

2020

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Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells

Physica status solidi. PSS-RRL. Rapid research letters, 2023-07, Vol.17 (7), p.n/a

2023

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Excitation Transfer from Cr2+ to Fe2+ Ions in Co-doped ZnSe as a Pumping Scheme for Infrared Solid-State Lasers

Journal of electronic materials, 2023-08, Vol.52 (8), p.5166-5171

2023

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Spatially resolved degradation effects in UVB LEDs stressed by constant current operation

Applied physics letters, 2023-03, Vol.122 (13)

2023

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Kinetics of excitation transfer from Cr 2+ to Fe 2+ ions in co-doped ZnSe

Optics letters, 2022-05, Vol.47 (9), p.2129

2022

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Spectroscopic Analysis of Optoelectronic Semiconductors

1, 2016

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Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers

Physica status solidi. PSS-RRL. Rapid research letters, 2022-04, Vol.16 (4), p.n/a

2022

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Kinetics of excitation transfer from Cr2+ to Fe2+ ions in co-doped ZnSe

Optics letters, 2022-05, Vol.47 (9), p.2129-2132

2022

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By-Emitter Analysis of 450-nm Emitting High-Power Diode Laser Bars

IEEE journal of selected topics in quantum electronics, 2019-11, Vol.25 (6), p.1-6

2019

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Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers

Laser & photonics reviews, 2011-05, Vol.5 (3), p.422-441

2011

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Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

Journal of applied physics, 2019-05, Vol.125 (18)

2019

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Catastrophic Optical Damage of GaN-Based Diode Lasers: Sequence of Events, Damage Pattern, and Comparison with GaAs-Based Devices

Journal of electronic materials, 2018-09, Vol.47 (9), p.4959-4963

2018

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Photoluminescence lineshape of ZnO

AIP advances, 2014-12, Vol.4 (12), p.123001-123001-4

2014

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Dynamics of Broadband Lasing Cascade from a Single Dot-in-well InGaAs Microdisk

Scientific reports, 2019-04, Vol.9 (1), p.5635, Article 5635

2019

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Long-Term Aging and Quick Stress Testing of 980-nm Single-Spatial Mode Lasers

Journal of lightwave technology, 2015-11, Vol.33 (21), p.4450-4456

2015

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Origin of Band-Tail and Deep-Donor States in Cu 2 ZnSnS 4 Solar Cells and Their Suppression through Sn-Poor Composition

The journal of physical chemistry letters, 2019-12, Vol.10 (24), p.7929-7936

2019

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Analysis of GaN based high‐power diode lasers after singular degradation events

Physica status solidi. PSS-RRL. Rapid research letters, 2017-07, Vol.11 (7), p.n/a

2017

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How does external feedback cause AlGaAs-based diode lasers to degrade?

Applied physics letters, 2013-01, Vol.102 (2)

2013

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High single-spatial-mode pulsed power from 980 nm emitting diode lasers

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Temperature‐Dependent Charge Carrier Diffusion in [ 0001¯ ] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

Impact of the crystallinity of mesoporous polymeric graphitic carbon nitride on the photocatalytic performance under UV and visible light

Spontaneous and stimulated emission dynamics of PbS quantum dots in a glass matrix

Kinetics of catastrophic optical damage in GaN-based diode lasers

Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression through Sn-Poor Composition

Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells

Excitation Transfer from Cr2+ to Fe2+ Ions in Co-doped ZnSe as a Pumping Scheme for Infrared Solid-State Lasers

Spatially resolved degradation effects in UVB LEDs stressed by constant current operation

Kinetics of excitation transfer from Cr 2+ to Fe 2+ ions in co-doped ZnSe

Spectroscopic Analysis of Optoelectronic Semiconductors

Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers

Kinetics of excitation transfer from Cr2+ to Fe2+ ions in co-doped ZnSe

By-Emitter Analysis of 450-nm Emitting High-Power Diode Laser Bars

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers

Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

Catastrophic Optical Damage of GaN-Based Diode Lasers: Sequence of Events, Damage Pattern, and Comparison with GaAs-Based Devices

Photoluminescence lineshape of ZnO

Dynamics of Broadband Lasing Cascade from a Single Dot-in-well InGaAs Microdisk

Long-Term Aging and Quick Stress Testing of 980-nm Single-Spatial Mode Lasers

Origin of Band-Tail and Deep-Donor States in Cu 2 ZnSnS 4 Solar Cells and Their Suppression through Sn-Poor Composition

Analysis of GaN based high‐power diode lasers after singular degradation events

How does external feedback cause AlGaAs-based diode lasers to degrade?

High single-spatial-mode pulsed power from 980 nm emitting diode lasers

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