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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Journal of crystal growth, 2013-09, Vol.378, p.251-253

2013

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Silicon-Germanium (SiGe) Nanostructures - Production, Properties and Applications in Electronics

1, 2011

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Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

Applied physics letters, 1998-03, Vol.72 (13), p.1617-1619

1998

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AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

Journal of electron spectroscopy and related phenomena, 2013-10, Vol.190, p.295-301

2013

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Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method

Journal of physics. Conference series, 2013-01, Vol.417 (1), p.12008-5

2013

Volltextzugriff (PDF)

Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique

Thin solid films, 2008-11, Vol.517 (1), p.353-355

2008

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Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si + implantation

Thin solid films, 2010, Vol.518 (6), p.S162-S164

2010

Volltextzugriff (PDF)

Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions

Thin solid films, 2008-11, Vol.517 (1), p.87-89

2008

Volltextzugriff (PDF)

Treatment of dermatophyte onychomycosis with three pulses of terbinafine (500 mg day⁻¹ for a week)

Mycoses, 2009, Vol.52 (1), p.72-76

2009

Volltextzugriff (PDF)

Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

Thin solid films, 2008-11, Vol.517 (1), p.359-361

2008

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Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method

Journal of crystal growth, 2009-01, Vol.311 (3), p.825-828

2009

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Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

Microelectronic engineering, 2011-04, Vol.88 (4), p.465-468

2011

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Local control of strain in SiGe by ion-implantation technique

Journal of crystal growth, 2009-01, Vol.311 (3), p.806-808

2009

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Real-time PCR TaqMan assay for detecting Trichophyton tonsurans, a causative agent of tinea capitis, from hairbrushes

Medical mycology (Oxford), 2006-09, Vol.44 (6), p.579-581

2006

Volltextzugriff (PDF)

Resonant photoluminescence from Ge self-assembled dots in optical microcavities

Journal of crystal growth, 2009-01, Vol.311 (3), p.883-887

2009

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Vertical-coupled SiGe double quantum dots

Electronics letters, 2010-06, Vol.46 (13), p.940-941

2010

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Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures

Thin solid films, 2008-11, Vol.517 (1), p.340-342

2008

Volltextzugriff (PDF)

High-mobility strained-Si PMOSFET's

IEEE transactions on electron devices, 1996-10, Vol.43 (10), p.1709-1716

1996

Volltextzugriff (PDF)

Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields

Journal of low temperature physics, 2010-04, Vol.159 (1-2), p.222-225

2010

Volltextzugriff (PDF)

Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition

Thin solid films, 2008-11, Vol.517 (1), p.254-256

2008

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Enhancement of hole conductance in the Ge quantum well of a SiGe heterostructure via realization of double-side modulation doping

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S63-S67

2007

Volltextzugriff (PDF)

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

Physica. E, Low-dimensional systems & nanostructures, 2008-04, Vol.40 (6), p.1935-1937

2008

Volltextzugriff (PDF)

Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates

Applied physics letters, 2002-07, Vol.81 (5), p.817-819

2002

Volltextzugriff (PDF)

Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S161-S163

2007

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Growth of SiGe/Ge/SiGe heterostructures with ultrahigh hole mobility and their device application

Journal of crystal growth, 2003-04, Vol.251 (1), p.670-675

2003

Volltextzugriff (PDF)

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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Silicon-Germanium (SiGe) Nanostructures - Production, Properties and Applications in Electronics

Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method

Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique

Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si + implantation

Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions

Treatment of dermatophyte onychomycosis with three pulses of terbinafine (500 mg day⁻¹ for a week)

Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method

Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

Local control of strain in SiGe by ion-implantation technique

Real-time PCR TaqMan assay for detecting Trichophyton tonsurans, a causative agent of tinea capitis, from hairbrushes

Resonant photoluminescence from Ge self-assembled dots in optical microcavities

Vertical-coupled SiGe double quantum dots

Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures

High-mobility strained-Si PMOSFET's

Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields

Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition

Enhancement of hole conductance in the Ge quantum well of a SiGe heterostructure via realization of double-side modulation doping

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates

Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures

Growth of SiGe/Ge/SiGe heterostructures with ultrahigh hole mobility and their device application

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